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公开(公告)号：US11830758B2
公开(公告)日：2023-11-28
申请号：US17456908
申请日：2021-11-30
Inventor： Atsushi Harikai , Shogo Okita , Akihiro Itou
IPC: H01L21/3065 , H01L21/683 , H01J37/32
CPC classification number: H01L21/6836 , H01J37/32495 , H01J37/32862 , H01L21/3065
Abstract: A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.
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公开(公告)号：US10242914B2
公开(公告)日：2019-03-26
申请号：US15952342
申请日：2018-04-13
Inventor： Shogo Okita , Noriyuki Matsubara , Atsushi Harikai , Akihiro Itou
IPC: H01L21/027 , H01L21/78 , H01L21/3065 , H01L21/308 , H01L21/311 , G03F7/20 , G03F7/32 , G03F7/039 , G03F7/16 , G03F7/09 , H01J37/32
Abstract: A semiconductor chip manufacturing method includes forming a mask on a surface of a semiconductor wafer, forming an opening on the mask, exposing a dividing region of the semiconductor wafer, a rear surface of the semiconductor wafer is held by a dicing tape via an adhesive layer, singulating the semiconductor wafer into a plurality of semiconductor chips by etching the semiconductor wafer exposed to the opening with a first plasma until the semiconductor wafer reaches a rear surface, removing the mask so that the plurality of element chips from which the mask is removed are held by the holding sheet via the adhesive layer.At the time of removing the mask, the mask is removed from an alkaline developer having a dissolution rate of the mask larger than a dissolution rate of the adhesive layer.
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公开(公告)号：US11817323B2
公开(公告)日：2023-11-14
申请号：US17188005
申请日：2021-03-01
Inventor： Shogo Okita , Atsushi Harikai , Akihiro Itou
IPC: H01L21/311 , H01L21/78 , H01L21/683 , H01L21/3065 , H01L21/02
CPC classification number: H01L21/31138 , H01L21/6836 , H01L21/78 , H01L21/02274 , H01L21/30655 , H01L2221/68327
Abstract: An etching method including: a preparation step of preparing a resin layer and an electronic component supported thereby; and a resin etching step of etching the resin layer. The electronic component has a first surface covered with a protective film, a second surface opposite thereto, and a sidewall therebetween. The second surface is facing the resin layer. The resin layer is larger than the electronic component when seen from the first surface side. The resin etching step includes: a deposition step of depositing a first film, using a first plasma, on a surface of the protective film and a surface of the resin layer; and a removal step of removing, using a second plasma, the first film deposited on the resin layer and at least part of the resin layer. The deposition and removal steps are alternately repeated, with the protective film allowed to continue to exist.
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公开(公告)号：US11335564B2
公开(公告)日：2022-05-17
申请号：US16993466
申请日：2020-08-14
Inventor： Akihiro Itou , Atsushi Harikai , Toshiyuki Takasaki , Shogo Okita
IPC: H01L21/3065 , H01L21/02
Abstract: An element chip smoothing method including: an element chip preparation step of preparing at least one element chip including a first surface covered with a resin film, a second surface opposite the first surface, and a sidewall connecting the first surface to the second surface and having ruggedness; a sidewall cleaning step of exposing the element chip to a first plasma, to remove deposits adhering to the sidewall, with the resin film allowed to continue to exist; a sidewall oxidation step of exposing the element chip to a second plasma, after the sidewall cleaning step, to oxidize a surface of the sidewall, with the resin film allowed to continue to exist; and a sidewall etching step of exposing the element chip to a third plasma, after the sidewall oxidation step, to etch the sidewall, with the resin film allowed to continue to exist.
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公开(公告)号：US09458544B2
公开(公告)日：2016-10-04
申请号：US14604882
申请日：2015-01-26
Inventor： Yuji Zenitani , Takashi Nishihara , Tetsuya Asano , Akihiro Itou , Saifullah Badar
IPC: C25B9/08
CPC classification number: C25B9/08 , C25B3/00 , C25B11/0478 , C25B13/04
Abstract: An exemplary organic hydride conversion device for generating a hydrogen gas through organic hydride conversion according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB′xO3-x. The A element is an alkaline-earth metal and is contained in a range of 0.4
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Patent Agency Ranking
公开(公告)号：US10964597B2
公开(公告)日：2021-03-30
申请号：US16567047
申请日：2019-09-11
Inventor： Atsushi Harikai , Shogo Okita , Noriyuki Matsubara , Hidefumi Saeki , Akihiro Itou
IPC: H01L21/78 , H01L21/68 , H01L21/683
Abstract: An element chip manufacturing method including: a preparing step of preparing a first conveying carrier including a holding sheet and a frame, and a substrate held on the holding sheet, the holding sheet having a first surface and a second surface opposite the first surface, the frame attached to at least part of a peripheral edge of the holding sheet; a placing step of placing the first conveying carrier holding the substrate, on a second conveying carrier; a preprocessing step of preprocessing the substrate, after the placing step; a removing step of removing the second conveying carrier, after the preprocessing step; and a dicing step of subjecting the substrate held on the first conveying carrier to plasma exposure, after the removing step, to form a plurality of element chips from the substrate.
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公开(公告)号：US10923357B2
公开(公告)日：2021-02-16
申请号：US15899422
申请日：2018-02-20
Inventor： Akihiro Itou , Atsushi Harikai , Noriyuki Matsubara , Shogo Okita
IPC: H01L21/3065 , H01J37/32 , H01L21/687 , H01L21/683 , H01L21/78 , H01L21/311 , H01L21/67
Abstract: Provided is a manufacturing process of an element chip, which comprises a preparation step, a setting step for setting the substrate on a stage, and a plasma-dicing step for dividing the substrate into a plurality of element chips, wherein the plasma-dicing step is achieved by repeatedly implementing etching routines each including an etching step for etching the second layer along the street regions to form a plurality of grooves and a depositing step for depositing a protective film on inner walls of the grooves, wherein the plasma-dicing step includes a first etching step for forming the grooves each having a first scallop on the inner wall thereof at a first pitch, and a second etching step for forming the grooves each having a second scallop on the inner wall thereof at a second pitch, and wherein the second pitch is greater than the first pitch.
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公开(公告)号：US10892190B2
公开(公告)日：2021-01-12
申请号：US16246627
申请日：2019-01-14
Inventor： Shogo Okita , Atsushi Harikai , Noriyuki Matsubara , Hidefumi Saeki , Akihiro Itou
IPC: H01L21/78 , H01L21/56 , H01L21/683 , H01L21/3065 , H01J37/00 , H01L21/311 , H01L21/687 , H01L21/67
Abstract: A manufacturing process of an element chip comprises steps of preparing a substrate including dicing regions and element regions, attaching a holding sheet held on a frame with a die attach film in between, forming a protective film covering the substrate, forming a plurality of grooves in the protective film along the dicing regions, plasma-etching the substrate to expose the die attach film and then die attach film along the dicing regions, and picking up each of the element chips along with the separated die attach film away from the holding sheet, wherein the die attach film has an area greater than that of the substrate, and wherein the protective film includes a first covering portion covering the substrate and a second covering portion covering at least a portion of the die attach film that extends beyond an outer edge of the substrate.
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公开(公告)号：US10714356B2
公开(公告)日：2020-07-14
申请号：US16154930
申请日：2018-10-09
Inventor： Shogo Okita , Atsushi Harikai , Akihiro Itou , Noriyuki Matsubara
IPC: H01L21/306 , H01L21/3065 , H01L21/67 , H01L21/683 , H01L21/677 , H01L21/687 , H01L21/311 , H01J37/00
Abstract: Provided is a plasma processing method which comprises steps of preparing a conveying carrier including a holding sheet and a frame provided on a peripheral region of the holding sheet, adhering the substrate on the holding sheet in an inner region inside the peripheral region to hold the substrate on the conveying carrier, sagging the holding sheet in the inner region, setting the conveying carrier on a stage provided within a plasma processing apparatus to contact the holding sheet on the stage so that the holding sheet in the inner region touches the stage before the holding sheet in the peripheral region does, and plasma processing the substrate.
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公开(公告)号：US10297489B2
公开(公告)日：2019-05-21
申请号：US15427590
申请日：2017-02-08
Inventor： Shogo Okita , Atsushi Harikai , Akihiro Itou
IPC: H01L21/67 , H01L21/687 , H01L21/3065 , H01J37/32
Abstract: A plasma processing method includes a mounting process of mounting a holding sheet holding a substrate in a stage provided in a plasma processing apparatus, and a fixing process of fixing the holding sheet to the stage. The plasma processing method further includes a determining process of determining whether or not a contact state of the holding sheet with the stage is good or bad after the fixing process, and a plasma etching process of etching the substrate by exposing a surface of the substrate to plasma on the stage, in a case in which the contact state is determined to be good in the determining process.
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