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公开(公告)号：US09942506B2
公开(公告)日：2018-04-10
申请号：US15720668
申请日：2017-09-29
Inventor： Mitsuyoshi Mori , Hirohisa Ohtsuki , Yoshiyuki Ohmori , Yoshihiro Sato , Ryohei Miyagawa
IPC: H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H04N5/3745
Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.
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22.发明授权公开(公告)号：US09917119B2
公开(公告)日：2018-03-13
申请号：US14972153
申请日：2015-12-17
Inventor： Masashi Murakami , Kazuko Nishimura , Yutaka Abe , Yoshiyuki Matsunaga , Yoshihiro Sato , Junji Hirase
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes: a unit pixel cell comprising: a photoelectric converter generating an electric signal and comprising a first and second electrodes and a photoelectric conversion film located therebetween, the first electrode being located on a light receiving side of the photoelectric conversion film, a signal detection circuit detecting the electric signal and comprising a first transistor and a second transistor that are connected to the second electrode, the first transistor amplifying the electric signal, and a capacitor circuit comprising a first capacitor and a second capacitor having a capacitance value larger than that of the first capacitor that are serially connected to each other, the capacitor circuit being provided between the second electrode and a reference voltage; and a feedback circuit comprising the first transistor and an inverting amplifier and negatively feeding back the electric signal to the second transistor via the first transistor and the inverting amplifier.
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公开(公告)号：US09881967B2
公开(公告)日：2018-01-30
申请号：US15418662
申请日：2017-01-27
Inventor： Yoshihiro Sato , Junji Hirase
IPC: H01L27/146
CPC classification number: H01L27/14665 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L27/1462 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/307
Abstract: An imaging device includes a unit pixel cell including: a semiconductor substrate including a first region exposed to a surface of the semiconductor substrate in a first area, and a second region directly adjacent to the first region and exposed to the surface in a second area; a photoelectric converter; a contact plug connected to the second region; a first transistor including the second region as one of a source and a drain, a first electrode covering a first portion of the first area, and a first insulation layer between the first electrode and the semiconductor substrate; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When seen in a direction perpendicular to the surface, a contact between the second region and the contact plug is located between the first electrode and the second electrode.
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公开(公告)号：US09881960B2
公开(公告)日：2018-01-30
申请号：US14556093
申请日：2014-11-28
Inventor： Yoshihiro Sato , Ryohei Miyagawa , Tokuhiko Tamaki , Junji Hirase , Yoshiyuki Ohmori , Yoshiyuki Matsunaga
IPC: H01L27/146 , H04N5/363 , H04N5/378 , H01L21/266 , H01L21/8234
CPC classification number: H01L27/14643 , H01L21/266 , H01L21/823456 , H01L21/823481 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14665 , H01L27/14689 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.
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公开(公告)号：US09813651B2
公开(公告)日：2017-11-07
申请号：US14579592
申请日：2014-12-22
Inventor： Mitsuyoshi Mori , Hirohisa Ohtsuki , Yoshiyuki Ohmori , Yoshihiro Sato , Ryohei Miyagawa
IPC: H04N5/335 , H04N3/14 , H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H04N5/3745
Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.
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Patent Agency Ranking
公开(公告)号：US12199124B2
公开(公告)日：2025-01-14
申请号：US17493923
申请日：2021-10-05
Inventor： Yuuko Tomekawa , Yoshihiro Sato
IPC: H01L27/146
Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.
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公开(公告)号：US12193247B2
公开(公告)日：2025-01-07
申请号：US18061233
申请日：2022-12-02
Inventor： Yoshihiro Sato , Satoshi Shibata , Ryota Sakaida
IPC: H01L27/146 , H10K30/30 , H10K39/32
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US12094895B2
公开(公告)日：2024-09-17
申请号：US17838911
申请日：2022-06-13
Inventor： Junji Hirase , Yoshihiro Sato , Yasuyuki Endoh , Hiroyuki Amikawa
IPC: H01L27/146 , H01L27/02 , H04N25/57 , H04N25/75 , H04N25/76
CPC classification number: H01L27/1461 , H01L27/0288 , H01L27/14603 , H01L27/14636 , H01L27/14643 , H04N25/57 , H04N25/75 , H04N25/76
Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.
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公开(公告)号：US12046607B2
公开(公告)日：2024-07-23
申请号：US18330197
申请日：2023-06-06
Inventor： Yoshihiro Sato , Yoshinori Takami , Ryota Sakaida
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14607 , H01L27/1463 , H01L27/14643
Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.
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公开(公告)号：US11646328B2
公开(公告)日：2023-05-09
申请号：US17039018
申请日：2020-09-30
Inventor： Kyosuke Kobinata , Sanshiro Shishido , Yoshihiro Sato
IPC: H01L27/146 , H01L31/0224 , H04N5/378 , H04N5/353 , H04N5/374 , H04N5/357
CPC classification number: H01L27/14605 , H01L27/14603 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L31/022408 , H04N5/353 , H04N5/357 , H04N5/374 , H04N5/378
Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.
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