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公开(公告)号：US10446549B2
公开(公告)日：2019-10-15
申请号：US16384575
申请日：2019-04-15
Inventor： Yoshihiro Sato , Ryota Sakaida , Satoshi Shibata , Taiji Noda
IPC: H01L27/092 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.
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公开(公告)号：US11570383B2
公开(公告)日：2023-01-31
申请号：US17213597
申请日：2021-03-26
Inventor： Shunsuke Isono , Tatsunori Momose , Ryota Sakaida
IPC: H04N5/341 , H04N5/355 , H01L27/146
Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.
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公开(公告)号：US11715748B2
公开(公告)日：2023-08-01
申请号：US17191437
申请日：2021-03-03
Inventor： Yoshihiro Sato , Yoshinori Takami , Ryota Sakaida
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/1463 , H01L27/14607 , H01L27/14643
Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.
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公开(公告)号：US11545525B2
公开(公告)日：2023-01-03
申请号：US17013289
申请日：2020-09-04
Inventor： Yoshihiro Sato , Satoshi Shibata , Ryota Sakaida
IPC: H01L27/146 , H01L27/30 , H01L51/42
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US09735204B2
公开(公告)日：2017-08-15
申请号：US14553559
申请日：2014-11-25
Inventor： Ryota Sakaida , Nobuyoshi Takahashi , Kosaku Saeki
IPC: H01L27/30 , H01L27/146 , H01L21/768 , H01L21/285 , H01L23/485 , H01L51/44
CPC classification number: H01L27/307 , H01L21/28525 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L27/14612 , H01L27/14643 , H01L51/441 , H01L2924/0002 , H01L2924/00
Abstract: Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.
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Patent Agency Ranking
公开(公告)号：US10985197B2
公开(公告)日：2021-04-20
申请号：US16586805
申请日：2019-09-27
Inventor： Yoshihiro Sato , Yoshinori Takami , Ryota Sakaida
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.
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公开(公告)号：US10304828B2
公开(公告)日：2019-05-28
申请号：US15698019
申请日：2017-09-07
Inventor： Yoshihiro Sato , Ryota Sakaida , Satoshi Shibata , Taiji Noda
IPC: H01L27/092 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.
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公开(公告)号：US09883131B2
公开(公告)日：2018-01-30
申请号：US15190198
申请日：2016-06-23
Inventor： Sanshiro Shishido , Ryota Sakaida , Yoshiyuki Matsunaga
CPC classification number: H04N5/378 , H04N5/3698 , H04N5/374
Abstract: An imaging device includes a photoelectric converter that generates charge; a first charge transfer channel having a first end electrically connected to the photoelectric converter and a second end, and transferring the charge in a direction from the first end to the second end; a second charge transfer channel diverging from the first charge transfer channel at a first position and transferring a first part of the charge; a third charge transfer channel diverging from the first charge transfer channel at a second position different from the first position in the direction and transferring a part of the second part of the charge; and first and second charge accumulators that accumulate at least a part of the first and second part of the charge respectively. The imaging device does not include a gate that switches between cutoff and transfer of charge, in the first charge transfer channel.
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公开(公告)号：US12193247B2
公开(公告)日：2025-01-07
申请号：US18061233
申请日：2022-12-02
Inventor： Yoshihiro Sato , Satoshi Shibata , Ryota Sakaida
IPC: H01L27/146 , H10K30/30 , H10K39/32
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US12046607B2
公开(公告)日：2024-07-23
申请号：US18330197
申请日：2023-06-06
Inventor： Yoshihiro Sato , Yoshinori Takami , Ryota Sakaida
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14607 , H01L27/1463 , H01L27/14643
Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.
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