公开(公告)号：US12176374B2

公开(公告)日：2024-12-24

申请号：US17322960

申请日：2021-05-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami

IPC: H01L27/146

Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.

公开(公告)号：US10593714B2

公开(公告)日：2020-03-17

申请号：US16033723

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Junji Hirase ,  Yoshinori Takami

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/378

Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

公开(公告)号：US11715748B2

公开(公告)日：2023-08-01

申请号：US17191437

申请日：2021-03-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami ,  Ryota Sakaida

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14607 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

公开(公告)号：US10931900B2

公开(公告)日：2021-02-23

申请号：US16410893

申请日：2019-05-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Junji Hirase ,  Yoshihiro Sato ,  Yoshinori Takami ,  Masayuki Takase ,  Masashi Murakami

IPC: H04N5/361 ,  H04N5/359 ,  H04N5/363 ,  H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

公开(公告)号：US12046607B2

公开(公告)日：2024-07-23

申请号：US18330197

申请日：2023-06-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami ,  Ryota Sakaida

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14643

Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.

公开(公告)号：US11532653B2

公开(公告)日：2022-12-20

申请号：US17518058

申请日：2021-11-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji Hirase ,  Yoshinori Takami ,  Yoshihiro Sato

IPC: H01L27/146 ,  H04N5/369 ,  H01L27/30 ,  H04N5/359

Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.

公开(公告)号：US11251216B2

公开(公告)日：2022-02-15

申请号：US16535963

申请日：2019-08-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji Hirase ,  Yoshinori Takami ,  Yoshihiro Sato

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.

公开(公告)号：US09711558B2

公开(公告)日：2017-07-18

申请号：US14846947

申请日：2015-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami ,  Kosaku Saeki ,  Junji Hirase

IPC: H01L27/00 ,  H01L31/062 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14665

Abstract: An imaging device including a unit pixel cell comprising: a semiconductor substrate including a first conductivity type region of a first conductivity type, a first and second impurity regions of a second conductivity type provided in the first conductivity type region; a photoelectric converter located above the semiconductor substrate; and a first transistor including a gate electrode and at least a part of the second impurity region as a source or a drain. The first impurity region is at least partially located in a surface of the semiconductor substrate and electrically connected to the photoelectric converter. The second impurity region is electrically connected to the photoelectric converter via the first impurity region and has an impurity concentration lower than that of the first impurity region. The second impurity region at least partially overlaps the gate electrode in a plan view.

公开(公告)号：US10985197B2

公开(公告)日：2021-04-20

申请号：US16586805

申请日：2019-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami ,  Ryota Sakaida

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

公开(公告)号：US10341591B2

公开(公告)日：2019-07-02

申请号：US15446545

申请日：2017-03-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji Hirase ,  Yoshihiro Sato ,  Yoshinori Takami ,  Masayuki Takase ,  Masashi Murakami

IPC: H04N5/359 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H01L27/146 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.