公开(公告)号：US11996422B2

公开(公告)日：2024-05-28

申请号：US17028627

申请日：2020-09-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki Takase ,  Shunsuke Isono ,  Yuuko Tomekawa

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14636

Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.

公开(公告)号：US11114505B2

公开(公告)日：2021-09-07

申请号：US17078440

申请日：2020-10-23

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Shunsuke Isono ,  Hidenari Kanehara ,  Sanshiro Shishido ,  Takeyoshi Tokuhara

IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146

Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer. The second electrode includes a connection region in which the second electrode is connected to third electrode, the connection region overlaps analog circuitry in a plan view, and in any cross-sections perpendicular to a surface of the semiconductor substrate and parallel to a column or row direction and that intersects at least one of the first electrodes, the digital circuitry includes no transistor that is located directly below the connection region.

公开(公告)号：US11233209B2

公开(公告)日：2022-01-25

申请号：US16943918

申请日：2020-07-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Akio Nakajun

IPC: H01L27/146 ,  H01L51/42

Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

公开(公告)号：US10854678B2

公开(公告)日：2020-12-01

申请号：US16251599

申请日：2019-01-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Hidenari Kanehara ,  Sanshiro Shishido ,  Takeyoshi Tokuhara

IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

公开(公告)号：US10756281B2

公开(公告)日：2020-08-25

申请号：US16247698

申请日：2019-01-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Akio Nakajun

IPC: H01L27/146 ,  H01L51/42

Abstract: An imaging device includes a semiconductor substrate that includes a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; and a first layer that covers the second electrode, the first layer being located above the pixel region and the peripheral region. A thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region. A level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

公开(公告)号：US11637147B2

公开(公告)日：2023-04-25

申请号：US17394091

申请日：2021-08-04

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Shunsuke Isono ,  Hidenari Kanehara ,  Sanshiro Shishido ,  Takeyoshi Tokuhara

IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146

Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

公开(公告)号：US11570383B2

公开(公告)日：2023-01-31

申请号：US17213597

申请日：2021-03-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Tatsunori Momose ,  Ryota Sakaida

IPC: H04N5/341 ,  H04N5/355 ,  H01L27/146

Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.