公开(公告)号：US11594562B2

公开(公告)日：2023-02-28

申请号：US17077013

申请日：2020-10-22

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Akio Nakajun ,  Shota Yamada

IPC: H01L27/146 ,  H01L51/44

Abstract: An imaging device including: a semiconductor substrate having a first and second surface opposite to the first surface; a microlens located closer to the first surface than the second surface; a first photoelectric converter located between the first surface and the microlens, where the first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges; and a signal detecting section located in the semiconductor substrate, the signal detecting section being configured to output a signal corresponding to the electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer and above the signal detecting section.

公开(公告)号：US12302656B2

公开(公告)日：2025-05-13

申请号：US17359715

申请日：2021-06-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akio Nakajun ,  Hideyuki Odahara ,  Manabu Tsunoda

IPC: H01L23/02 ,  H01L27/146 ,  H04N25/00 ,  H10F39/00

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which a plurality of pixels are arranged, and a peripheral region that surrounds the pixel region; a resin layer including a first side surface having a first curved surface, and a second side surface located away from the pixel region further than the first side surface, the resin layer being located on the peripheral region; a sealing layer which overlaps with the pixel region and the periphery region in a plan view, and seals the plurality of pixels; and a first light shielding layer which is located between the resin layer and the sealing layer, and overlaps with at least part of the first curved surface in the plan view.

公开(公告)号：US12057460B2

公开(公告)日：2024-08-06

申请号：US18101834

申请日：2023-01-26

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Akio Nakajun ,  Shota Yamada

IPC: H01L27/146 ,  H10K30/80

CPC classification number: H01L27/14603 ,  H01L27/14605 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14665 ,  H10K30/80 ,  H01L27/14621

Abstract: An imaging device including: a semiconductor substrate having a first surface and a second surface opposite to the first surface; a microlens located closer to the first surface than to the second surface; and a first photoelectric converter located between the first surface and the microlens. The first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface. The imaging device includes no photodiode as a photoelectric converter, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer.

公开(公告)号：US11233209B2

公开(公告)日：2022-01-25

申请号：US16943918

申请日：2020-07-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Akio Nakajun

IPC: H01L27/146 ,  H01L51/42

Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

公开(公告)号：US10756281B2

公开(公告)日：2020-08-25

申请号：US16247698

申请日：2019-01-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Akio Nakajun

IPC: H01L27/146 ,  H01L51/42

Abstract: An imaging device includes a semiconductor substrate that includes a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; and a first layer that covers the second electrode, the first layer being located above the pixel region and the peripheral region. A thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region. A level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.