公开(公告)号：US07939888B2

公开(公告)日：2011-05-10

申请号：US11857729

申请日：2007-09-19

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

IPC: H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC classification number: H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

Abstract: The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

Abstract translation: 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

公开(公告)号：US20110038346A1

公开(公告)日：2011-02-17

申请号：US12989942

申请日：2009-04-28

Applicant: Kazunari Yokomokora ,  Yasuhiro Hamaguchi ,  Shimpei To ,  Osamu Nakamura

Inventor： Kazunari Yokomokora ,  Yasuhiro Hamaguchi ,  Shimpei To ,  Osamu Nakamura

IPC: H04W72/04

CPC classification number: H04L5/0039 ,  H04L5/0007 ,  H04L5/006 ,  H04L5/0094 ,  H04L27/2614

Abstract: A wireless communication system includes a first communication device which arranges a frequency signal into which a single carrier signal is converted by time-to-frequency conversion in subcarriers and wirelessly transmits a resultant signal and a second communication device which receives the signal wirelessly transmitted by the first communication device. The wireless communication system includes a selection unit which calculates, for each determined selection candidate as a combination of a predetermined segment size and information indicating predetermined average transmission power, a value indicating reception quality in the second communication device upon transmission by the first communication device by using an arrangement using the predetermined segment size, and the predetermined average transmission power, and which selects a selection candidate to be used upon transmission by the first communication device from among the selection candidates based on the calculated value indicating the reception quality. Therefore, an excellent transmission efficiency is obtained.

Abstract translation: 一种无线通信系统包括：第一通信装置，其通过在子载波中进行时间 - 频率转换而将单个载波信号进行转换的频率信号，并且无线地发送合成信号;以及第二通信装置，其接收由所述信号无线发送的信号 第一通信设备。 无线通信系统包括：选择单元，对于作为预定分段大小和表示预定平均发送功率的信息的组合的每个确定的选择候选，计算第一通信设备通过第一通信设备发送时指示第二通信设备中的接收质量的值 使用预定分段大小和预定平均发送功率的布置，并且根据表示接收质量的计算值，从选择候选中选择要由第一通信设备发送的选择候选。 因此，获得了良好的传输效率。

公开(公告)号：US07824520B2

公开(公告)日：2010-11-02

申请号：US10807472

申请日：2004-03-24

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26 ,  B44C1/22 ,  C03C15/00

CPC classification number: C23C16/45595 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32009 ,  H01J37/32366 ,  H01J37/32541

Abstract: In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.

Abstract translation: 在大气压下产生等离子体的情况下，由于产生高密度等离子体而产生的粒子将成为显示装置中显示部的点缺陷或线缺陷等缺陷的原因。 鉴于上述情况提供本发明，并且提供了一种用于抑制颗粒产生的等离子体处理装置。 根据本发明，通过在待处理的基板上进行等离子体处理，在有限的最小区域中产生等离子体。 通过提供多个等离子体产生单元来产生颗粒的产生，产生具有与限制的最小区域相似尺寸的最小等离子体，改变多个等离子体产生单元和待处理的基板的相对位置，并执行 等离子体处理到有限的预定区域。

公开(公告)号：US07821005B2

公开(公告)日：2010-10-26

申请号：US11404923

申请日：2006-04-17

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

IPC: H01L29/10 ,  H01L29/76 ,  H01L31/112

CPC classification number: H01L29/78621 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78633 ,  H01L29/78645 ,  Y10S257/913

Abstract: Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

Abstract translation: 通过离子掺杂法将磷注入到结晶半导体膜中。 然而，吸杂所需的磷的浓度为1×10 10 / cm 3以上，这阻碍后续退火的再结晶，因此成为问题。 此外，当以高浓度添加磷时，掺杂所需的处理时间增加，并且掺杂步骤中的生产量降低，因此这成为问题。 本发明的特征在于，在具有晶体结构的半导体膜中形成杂质区域，其中添加了属于元素周期表第18族的元素，并且在杂质区域中分离出包含在半导体膜中的金属元素的吸杂剂 通过热处理进行。 此外，杂质区域中也可以含有一种导电型杂质。

公开(公告)号：US07709843B2

公开(公告)日：2010-05-04

申请号：US10574880

申请日：2004-10-25

Applicant: Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

Inventor： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

IPC: H01L29/786

CPC classification number: H01L27/12 ,  H01L27/1292 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

Abstract: According to the present invention, which is a display device in which a light-emitting element where an organic substance generating luminescence referred to as electroluminescence or a medium including a mixture of an organic substance and an inorganic substance is sandwiched between electrodes is connected to a TFT, the invention is to manufacture a display panel by forming at least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask layer for forming a predetermined pattern is formed by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object and by forming a conductive layer or an insulating layer is used as a method capable of selectively forming a pattern.

Abstract translation: 根据本发明，其中将发出被称为电致发光的有机物质的发光元件或包含有机物和无机物的混合物的介质夹在电极之间的发光元件连接到 TFT，本发明通过形成至少一个或多个形成布线或电极的导电层以及用于制造用于形成预定图案的掩模层等显示面板所需的图案来制造显示面板，由 能够选择性地形成图案的方法。 使用能够通过选择性地排出根据特定目的的组合物的液滴并且通过形成导电层或绝缘层来形成预定图案的液滴喷射方法作为能够选择性地形成图案的方法。

公开(公告)号：US20090325376A1

公开(公告)日：2009-12-31

申请号：US12491796

申请日：2009-06-25

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: H01L21/768

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66742

Abstract: An island-like interlayer insulating film is formed selectively in a region where a source interconnection and a gate interconnection intersect. For example, by use of ink jet method, a solution containing an insulating material is dropped on a region where the gate interconnection and the source interconnection intersect or a region where a holding capacitor is formed, that enable to reduce a photolithography process and to reduce the number of masks that are used in a TFT

Abstract translation: 在源极互连和栅极互连相交的区域中选择性地形成岛状的层间绝缘膜。 例如，通过使用喷墨法，将含有绝缘材料的溶液滴落在栅极互连和源极互连相交的区域或形成保持电容器的区域，能够减少光刻处理并减少 在TFT中使用的掩模的数量

公开(公告)号：US07629235B2

公开(公告)日：2009-12-08

申请号：US11471494

申请日：2006-06-21

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC: H01L21/36

CPC classification number: H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

Abstract translation: 根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。 因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。 此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。 此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

公开(公告)号：US07622208B2

公开(公告)日：2009-11-24

申请号：US11811791

申请日：2007-06-12

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: H01M8/18 ,  B01J7/00 ,  B01J19/00

CPC classification number: H01M8/0625 ,  B01J8/0423 ,  B01J2208/00495 ,  B01J2208/00504 ,  C01B3/32 ,  C01B2203/0216 ,  C01B2203/0233 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/1223 ,  C01B2203/1288 ,  Y02P20/128

Abstract: Disclosed is a reaction device including: a reactor, a heat insulating container housing the reactor, a pipe penetrating a wall of the insulating container to connect the reactor to an outside of the insulating container, wherein the wall of the heat insulating container includes at least two regions each having a different infrared absorptivity, and the region of the wall of higher infrared absorptivity is disposed on the same plane of the wall where the pipe penetrates. Also disclosed are a fuel cell device and an electronic apparatus using the reaction device.

Abstract translation: 公开了一种反应装置，包括：反应器，容纳反应器的隔热容器，穿过绝缘容器的壁的管子，用于将反应器连接到绝热容器的外部，其中隔热容器的壁至少包括 两个区域各自具有不同的红外吸收率，并且具有较高红外吸收率的壁的区域设置在管道穿透的壁的同一平面上。 还公开了使用该反应装置的燃料电池装置和电子设备。

公开(公告)号：US20090277379A1

公开(公告)日：2009-11-12

申请号：US12311396

申请日：2007-09-28

Applicant: Tadahiro Ohmi ,  Ryoichi Ohkura ,  Osamu Nakamura ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Ryoichi Ohkura ,  Osamu Nakamura ,  Takaaki Matsuoka

IPC: B05B13/02

CPC classification number: G11B5/84 ,  G03F7/162 ,  G11B7/261 ,  H01L21/6715 ,  H01L21/6838

Abstract: A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface.

Abstract translation: 从声波喷嘴朝向晶片的后表面喷射的气体。 沿着晶片的后表面流动到外周侧的气体的流速在晶片的后表面和第二杯之间增加，并且保持由伯努利的作用。 因此，抑制了晶片的振荡。 此外，防止抗蚀剂溶液流到背面。

公开(公告)号：US07560293B2

公开(公告)日：2009-07-14

申请号：US11826861

申请日：2007-07-19

Applicant: Etsuko Asano ,  Osamu Nakamura ,  Masayuki Sakakura

Inventor： Etsuko Asano ,  Osamu Nakamura ,  Masayuki Sakakura

IPC: G01R31/26 ,  H01L21/00

CPC classification number: H01L29/78627 ,  H01L22/34

Abstract: The reliability of a GOLD structure TFT depends on an impurity concentration in its gate-overlapped region. Thus, it is an object of the present invention to obtain a resistance distribution corresponding to a tapered shape of a gate electrode in a gate-overlapped region. According to the present invention, plural TEGs are manufactured as Lov resistance monitors in which mask alignment is misaligned with several μm interval to perform a resistance measurement on each of the TEGs. Consequently, a resistance distribution corresponding to a tapered shape can be obtained in a channel forming region, a gate-overlapped region and a source/drain region.

Abstract translation: GOLD结构TFT的可靠性取决于其栅极重叠区域中的杂质浓度。 因此，本发明的目的是获得对应于栅极重叠区域中的栅电极的锥形形状的电阻分布。 根据本发明，将多个TEG制造为Lov电阻监视器，其中掩模对准以几个间隔间隔对准，以对每个TEG执行电阻测量。 因此，可以在沟道形成区域，栅极重叠区域和源极/漏极区域中获得对应于锥形形状的电阻分布。