公开(公告)号：US10651625B2

公开(公告)日：2020-05-12

申请号：US16046173

申请日：2018-07-26

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard

IPC分类号： H01S5/028 ,  H01S5/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30 ,  H01S5/40 ,  H01S5/10 ,  H01S5/20

摘要： A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.

公开(公告)号：US11742633B2

公开(公告)日：2023-08-29

申请号：US17172138

申请日：2021-02-10

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC分类号： H01S5/22 ,  H01S5/30 ,  H01S5/02 ,  H01S5/0234

CPC分类号： H01S5/2205 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3018 ,  H01S5/0202 ,  H01S5/0234 ,  H01S5/2222 ,  H01S2301/176

摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

公开(公告)号：US11626707B2

公开(公告)日：2023-04-11

申请号：US17193951

申请日：2021-03-05

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

摘要： In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

公开(公告)号：US20210249839A1

公开(公告)日：2021-08-12

申请号：US17193951

申请日：2021-03-05

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

摘要： In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

公开(公告)号：US20210111030A1

公开(公告)日：2021-04-15

申请号：US17126907

申请日：2020-12-18

申请人： OSRAM OLED GmbH

发明人： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC分类号： H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

摘要： A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US20200227893A1

公开(公告)日：2020-07-16

申请号：US16834037

申请日：2020-03-30

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC分类号： H01S5/22 ,  H01S5/30

摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.