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    LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS
    22.
    发明申请
    LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS 有权
    增加图像传感器性能的层次

    公开(公告)号：US20140299956A1

    公开(公告)日：2014-10-09

    申请号：US13856993

    申请日：2013-04-04

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

    IPC: H01L31/0216 ,  H01L27/146

    CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

    Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

    Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

    Methods for high-dynamic-range color imaging
    23.
    发明授权
    Methods for high-dynamic-range color imaging 有权

    公开(公告)号：US10559615B2

    公开(公告)日：2020-02-11

    申请号：US15943651

    申请日：2018-04-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chen-Wei Lu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao

    IPC: H01L27/146 ,  H04N5/369 ,  G02B5/20

    Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.

    LINEAR-LOGARITHMIC IMAGE SENSOR
    27.
    发明申请
    LINEAR-LOGARITHMIC IMAGE SENSOR 审中-公开

    公开(公告)号：US20180041723A1

    公开(公告)日：2018-02-08

    申请号：US15228874

    申请日：2016-08-04

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Keiji Mabuchi ,  Dyson H. Tai ,  Oray Orkun Cellek ,  Duli Mao ,  Sohei Manabe

    IPC: H04N5/355 ,  H01L27/146 ,  H04N9/04 ,  H04N5/378 ,  H04N5/3745

    Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.

    Fractal-Edge Thin Film And Method Of Manufacture
    29.
    发明申请
    Fractal-Edge Thin Film And Method Of Manufacture 审中-公开
    分形边薄膜及其制造方法

    公开(公告)号：US20170005133A1

    公开(公告)日：2017-01-05

    申请号：US15268190

    申请日：2016-09-16

    Applicant: OmniVision Technologies, Inc.

    Inventor： Oray Orkun Cellek

    IPC: H01L27/146 ,  H01L31/0203

    CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14687

    Abstract: A method of manufacturing a fractal-edge thin film includes determining an area shape to be covered by the fractal-edge thin film. The method also includes generating a thin-film perimeter based upon the area shape, the thin-film perimeter having a fractal dimension exceeding one. The method also includes determining a photomask perimeter such that a photomask with the photomask perimeter, when used in a photolithography process, yields a fractal-edge thin film with the thin-film perimeter. The method may also include photolithographically etching a thin-film, the thin film having a photoresist layer disposed thereon, the photoresist layer having been exposed through the photomask, wherein the etching results in the fractal-edge thin film.

    Abstract translation: 分形边缘薄膜的制造方法包括确定由分形边缘薄膜覆盖的面积形状。 该方法还包括基于面积形状产生薄膜周长，薄膜周长具有超过一分形维数。 该方法还包括确定光掩模周长，使得具有光掩模周边的光掩模在光刻工艺中使用时产生具有薄膜周边的分形边缘薄膜。 该方法还可以包括光刻蚀刻薄膜，该薄膜具有设置在其上的光致抗蚀剂层，光致抗蚀剂层已经通过光掩模曝光，其中蚀刻导致分形边缘薄膜。

    Image sensor with dielectric charge trapping device
    30.
    发明授权
    Image sensor with dielectric charge trapping device 有权
    具有介电电荷俘获装置的图像传感器

    公开(公告)号：US09312299B2

    公开(公告)日：2016-04-12

    申请号：US14250192

    申请日：2014-04-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H01L31/167

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

    Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

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