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    Laser Based Display Method and System
    21.
    发明申请
    Laser Based Display Method and System 有权
    基于激光的显示方法和系统

    公开(公告)号：US20100302464A1

    公开(公告)日：2010-12-02

    申请号：US12789303

    申请日：2010-05-27

    申请人： James W. Raring ,  Paul Rudy

    发明人： James W. Raring ,  Paul Rudy

    IPC分类号： H04N5/74 ,  G02F1/13357 ,  F21V5/00

    CPC分类号： G03B21/2033 ,  H04N5/74 ,  H04N5/7441 ,  H04N5/7475 ,  H04N9/31 ,  H04N9/3129 ,  H04N9/3132 ,  H04N13/398 ,  H04N2005/745 ,  H04N2005/7483

    摘要： The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.

    摘要翻译： 本发明涉及显示技术。 更具体地，本发明的各种实施例提供投影显示系统，其中使用一个或多个激光二极管作为用于说明图像的光源。 在一组实施例中，本发明提供使用使用含氮化镓的材料制造的蓝色和/或绿色激光的投影仪系统。 在另一组实施例中，本发明提供具有由蓝色和/或绿色激光装置照亮的数字照明处理引擎的投影系统。 在一个实施例中，本发明提供一种3D显示系统。 还有其它实施例。

    Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
    25.
    发明授权
    Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates 有权
    用于高增益激光二极管的集成内部反射器，在非极性/半极性GaN衬底上具有高质量的切割面

    公开(公告)号：US08259769B1

    公开(公告)日：2012-09-04

    申请号：US12502058

    申请日：2009-07-13

    申请人： James W. Raring ,  Daniel F. Feezell

    发明人： James W. Raring ,  Daniel F. Feezell

    IPC分类号： H01S5/00

    CPC分类号： H01S5/101 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2304/04

    摘要： A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.

    摘要翻译： 一种可在一个或多个波长范围下工作的激光二极管装置。 该器件具有设置在含镓材料的非极性或半极性晶面上的第一波导。 在具体实施例中，第一波导具有第一增益特性和第一方向。 在具体实施例中，第一波导具有限定在第一端和第二端之间的第一端和第二端以及第一长度。 该器件具有设置在含镓材料的非极性或半极性晶面上的第二波导。 在具体实施例中，第二波导具有第二增益特性和第二方向。 在具体实施例中，第二波导具有限定在第一端和第二端之间的第一端，第二端和第二长度。 在具体实施例中，第二波导具有第一端耦合到第一波导的第一端。 第二长度与第二长度不同。 在具体实施例中，该器件具有设置在第二波导的第二端上的解理区域，该解理区域垂直于第二波导的第二方向。

    Method and structure for manufacture of light emitting diode devices using bulk GaN
    27.
    发明授权
    Method and structure for manufacture of light emitting diode devices using bulk GaN 有权
    使用体GaN制造发光二极管器件的方法和结构

    公开(公告)号：US08252662B1

    公开(公告)日：2012-08-28

    申请号：US12749476

    申请日：2010-03-29

    申请人： Christiane Poblenz ,  Mathew C. Schmidt ,  Daniel F. Feezell ,  James W. Raring ,  Rajat Sharma

    发明人： Christiane Poblenz ,  Mathew C. Schmidt ,  Daniel F. Feezell ,  James W. Raring ,  Rajat Sharma

    IPC分类号： H01L21/30

    CPC分类号： H01L33/007 ,  H01L33/0079 ,  H01L33/0095

    摘要： A method for manufacturing a plurality light emitting diodes includes providing a gallium nitride containing bulk crystalline substrate material configured in a non-polar or semi-polar crystallographic orientation, forming an etch stop layer, forming an n-type layer overlying the etch stop layer, forming an active region, a p-type layer, and forming a metallization. The method includes removing a thickness of material from the backside of the bulk gallium nitride containing substrate material. A plurality of individual LED devices are formed from at least a sandwich structure comprising portions of the metallization layer, the p-type layer, active layer, and the n-type layer. The LED devices are joined to a carrier structure. The method also includes subjecting the gallium nitride containing bulk crystalline substrate material to at least one etching process to selectively remove crystalline material underlying the etch stop layer, wherein the etch stop layer is exposed, and the etch stop layer remains substantially intact.

    摘要翻译： 一种用于制造多个发光二极管的方法，包括提供以非极性或半极性结晶取向配置的含氮化镓的体结晶衬底材料，形成蚀刻停止层，形成覆盖在蚀刻停止层上的n型层， 形成有源区，p型层，形成金属化。 该方法包括从块状含氮化镓的衬底材料的背面去除材料的厚度。 至少由金属化层，p型层，有源层和n型层的部分的夹层结构形成多个单独的LED器件。 LED装置连接到载体结构。 该方法还包括使含氮化镓的块状结晶衬底材料进行至少一个蚀刻工艺以选择性地去除蚀刻停止层下方的结晶材料，其中蚀刻停止层被暴露，并且蚀刻停止层基本保持不变。