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32 条记录 (耗时 0.02 秒)

    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING
    23.
    发明申请
    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING 审中-公开
    通过铝电镀形成的太阳能电池

    公开(公告)号：US20160204289A1

    公开(公告)日：2016-07-14

    申请号：US15079359

    申请日：2016-03-24

    申请人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    发明人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    IPC分类号： H01L31/0224 ,  C25D3/44 ,  C25D7/12

    CPC分类号： H01L31/022458 ,  C25D3/44 ,  C25D3/665 ,  C25D5/50 ,  C25D7/12 ,  C25D7/126 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    摘要： Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.

    摘要翻译： 铝的电镀可用于形成太阳能电池的电极。 与昂贵的银电极相比，铝允许降低电池成本并解决材料短缺的问题。 与通常需要阻挡层的铜电极相反，铝允许简化的电池结构和制造步骤。 在太阳能电池中，可以在背面电极中使用点接触以提高效率。 根据本公开形成的太阳能电池能够大规模和成本有效地部署太阳能光伏系统。

    SYSTEM AND METHOD FOR PURIFICATION OF ELECTROLYTIC SALT
    24.
    发明申请
    SYSTEM AND METHOD FOR PURIFICATION OF ELECTROLYTIC SALT 有权
    电解盐净化系统及方法

    公开(公告)号：US20160060772A1

    公开(公告)日：2016-03-03

    申请号：US14933274

    申请日：2015-11-05

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： C25B1/14 ,  C25B11/04 ,  C25B1/00 ,  C25B15/02 ,  C25B9/00 ,  C25B1/26

    CPC分类号： C25B1/14 ,  C01B33/037 ,  C25B1/006 ,  C25B1/26 ,  C25B9/00 ,  C25B11/0421 ,  C25B15/02 ,  C25B15/08 ,  C25F1/00 ,  C30B30/02

    摘要： Methods and systems for removing impurities from an electrolytic salt are disclosed. After removal of impurities from the salt, the salt can be subjected to electrorefining to produce high-purity materials, for example silicon. Impurities are removed from the salt using a system that includes a first working electrode, a counter electrode, and at least one reference electrode. A second working electrode can also be utilized. The salt may be utilized in an electrorefining system, for example a system operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

    摘要翻译： 公开了从电解盐中除去杂质的方法和系统。 在从盐中除去杂质后，可以对盐进行电解精炼以产生高纯度材料，例如硅。 使用包括第一工作电极，对电极和至少一个参比电极的系统从盐中除去杂质。 也可以使用第二工作电极。 该盐可用于电解精炼系统，例如以单相或多相操作的系统，以产生高纯度材料，例如太阳能硅。

    N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods
    25.
    发明申请
    N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods 有权
    通过电化学方法在金属氧化物和金属硫族化物中的N型掺杂

    公开(公告)号：US20100038638A1

    公开(公告)日：2010-02-18

    申请号：US12540933

    申请日：2009-08-13

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： H01L29/12 ,  C25D11/00 ,  C25D9/04

    CPC分类号： C25D3/56 ,  C25D5/50

    摘要： Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

    摘要翻译： 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中，向溶液中加入卤素前体，并在电化学电池的工作电极和对电极之间施加电势，以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中，向溶液中加入钇前体，以及在电化学电池的工作电极和对电极之间施加电势，以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。

    Low temperature fabrication of discrete silicon-containing substrates and devices
    26.
    发明申请
    Low temperature fabrication of discrete silicon-containing substrates and devices 审中-公开
    离散含硅衬底和器件的低温制造

    公开(公告)号：US20070262363A1

    公开(公告)日：2007-11-15

    申请号：US11788227

    申请日：2007-04-19

    申请人： Meng Tao ,  Fang Shi

    发明人： Meng Tao ,  Fang Shi

    IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336

    CPC分类号： H01L29/66643 ,  H01L21/76897 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66136 ,  H01L29/66545 ,  H01L29/7839

    摘要： Fabrication methods and processes are described, the methods and processes occurring at a low-temperature and involving passivation. The methods and processes easily incorporate annealing, deposition, patterning, lithography, etching, oxidation, epitaxy and chemical mechanical polishing for forming suitable devices, such as diodes and MOSFETs. Such fabrication is a suitable and more cost-effective alternative to a process of diffusion or doping, typical for forming p-n junctions. The process flow does not require temperatures above 700 degrees Centigrade. Formation of p-n junctions in discrete silicon diodes and MOSFETs are also provided, fabricated at low temperatures in the absence of diffusion or doping.

    摘要翻译： 描述了制造方法和工艺，在低温下发生并涉及钝化的方法和过程。 该方法和工艺容易地结合退火，沉积，图案化，光刻，蚀刻，氧化，外延和化学机械抛光，以形成合适的器件，例如二极管和MOSFET。 这种制造是形成p-n结的典型的扩散或掺杂过程的合适且更具成本效益的替代方案。 工艺流程不需要高于700摄氏度的温度。 还提供了在不存在扩散或掺杂的情况下在低温下制造的分立硅二极管和MOSFET中的p-n结的形成。

    Maximum power point tracking through load management
    28.
    发明授权
    Maximum power point tracking through load management 有权

    公开(公告)号：US11658483B2

    公开(公告)日：2023-05-23

    申请号：US17552782

    申请日：2021-12-16

    申请人： Joseph Azzolini ,  Meng Tao

    发明人： Joseph Azzolini ,  Meng Tao

    IPC分类号： H02J3/00 ,  H02J3/28 ,  H02J3/38

    CPC分类号： H02J3/007 ,  H02J3/28 ,  H02J3/381 ,  H02J2300/26

    摘要： A load management system for a solar photovoltaic (PV) system is disclosed. The load management system may include a PV array of solar modules, a plurality of loads configured to be powered by the PV array and switched on or off by a plurality of respective relays, a power sensor configured to measure an amount of power delivered from the PV array to the plurality of loads, and a controller coupled to the power sensor and the plurality of relays. The controller may be configured to determine a first power output of the PV array at a first time, switch a load, determine a second power output of the PV array at a second time, compare the first power output and the second power output, and based on the comparison, maintain the switched load or undo the switching of the load.

    Digital load management for variable output energy systems
    30.
    发明授权
    Digital load management for variable output energy systems 有权

    公开(公告)号：US10399441B2

    公开(公告)日：2019-09-03

    申请号：US15350171

    申请日：2016-11-14

    申请人： Meng Tao

    发明人： Meng Tao

    IPC分类号： H02J3/38 ,  B60L11/18 ,  H02J13/00 ,  H02J1/14 ,  H02J7/35 ,  B60L53/30 ,  B60L53/63 ,  B60L53/51 ,  H02J7/00

    摘要： Principles of the present disclosure present a new concept for solar photovoltaic systems wherein the load to the photovoltaic system is digitally managed. This allows for much higher system efficiency along with a much lower system cost as compared to traditional solar photovoltaic systems in specific applications. By eliminating storage and power electronics typically present in traditional solar photovoltaic systems, exemplary systems achieve a cost reduction of over 50%, while the system efficiency is improved to over 95%.