Maximum power point tracking through load management

    公开(公告)号:US11658483B2

    公开(公告)日:2023-05-23

    申请号:US17552782

    申请日:2021-12-16

    IPC分类号: H02J3/00 H02J3/28 H02J3/38

    摘要: A load management system for a solar photovoltaic (PV) system is disclosed. The load management system may include a PV array of solar modules, a plurality of loads configured to be powered by the PV array and switched on or off by a plurality of respective relays, a power sensor configured to measure an amount of power delivered from the PV array to the plurality of loads, and a controller coupled to the power sensor and the plurality of relays. The controller may be configured to determine a first power output of the PV array at a first time, switch a load, determine a second power output of the PV array at a second time, compare the first power output and the second power output, and based on the comparison, maintain the switched load or undo the switching of the load.

    Digital load management for variable output energy systems

    公开(公告)号:US10399441B2

    公开(公告)日:2019-09-03

    申请号:US15350171

    申请日:2016-11-14

    申请人: Meng Tao

    发明人: Meng Tao

    摘要: Principles of the present disclosure present a new concept for solar photovoltaic systems wherein the load to the photovoltaic system is digitally managed. This allows for much higher system efficiency along with a much lower system cost as compared to traditional solar photovoltaic systems in specific applications. By eliminating storage and power electronics typically present in traditional solar photovoltaic systems, exemplary systems achieve a cost reduction of over 50%, while the system efficiency is improved to over 95%.

    Formation of p-n homogeneous junctions
    6.
    发明授权
    Formation of p-n homogeneous junctions 有权
    形成p-n均质结

    公开(公告)号:US07768003B2

    公开(公告)日:2010-08-03

    申请号:US11855568

    申请日:2007-09-14

    IPC分类号: H01L29/10

    摘要: Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.

    摘要翻译: 描述了方法,结构和装置,其中结构和装置在溶液中制造了一个或多个p-n均聚点。 通过从溶液中顺次沉积铜的氧化物形成结。 铜的氧化物的传导类型由溶液的pH控制。

    N-type doping in metal oxides and metal chalcogenides by electrochemical methods
    10.
    发明授权
    N-type doping in metal oxides and metal chalcogenides by electrochemical methods 有权
    通过电化学方法在金属氧化物和金属硫族化物中进行N型掺杂

    公开(公告)号:US08212246B2

    公开(公告)日:2012-07-03

    申请号:US12540933

    申请日:2009-08-13

    申请人: Meng Tao Xiaofei Han

    发明人: Meng Tao Xiaofei Han

    IPC分类号: H01L29/10

    CPC分类号: C25D3/56 C25D5/50

    摘要: Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

    摘要翻译: 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中,向溶液中加入卤素前体,并在电化学电池的工作电极和对电极之间施加电势,以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中,向溶液中加入钇前体,以及在电化学电池的工作电极和对电极之间施加电势,以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。