公开(公告)号：US20090072231A1

公开(公告)日：2009-03-19

申请号：US11855568

申请日：2007-09-14

申请人： Meng Tao ,  Longcheng Wang

发明人： Meng Tao ,  Longcheng Wang

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/547

摘要： Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.

摘要翻译： 描述了方法，结构和装置，其中结构和装置在溶液中制造了一个或多个p-n均聚点。 通过从溶液中顺次沉积铜的氧化物形成结。 铜的氧化物的传导类型由溶液的pH控制。

公开(公告)号：US07768003B2

公开(公告)日：2010-08-03

申请号：US11855568

申请日：2007-09-14

申请人： Meng Tao ,  Longcheng Wang

发明人： Meng Tao ,  Longcheng Wang

IPC分类号： H01L29/10

CPC分类号： H01L31/068 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/547

摘要： Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.

摘要翻译： 描述了方法，结构和装置，其中结构和装置在溶液中制造了一个或多个p-n均聚点。 通过从溶液中顺次沉积铜的氧化物形成结。 铜的氧化物的传导类型由溶液的pH控制。

公开(公告)号：US11682739B2

公开(公告)日：2023-06-20

申请号：US16432702

申请日：2019-06-05

申请人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

发明人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

IPC分类号： H01L31/0224 ,  C25D7/12 ,  C25D3/44 ,  C25D3/66 ,  C25D5/50 ,  H01L31/18

CPC分类号： H01L31/022458 ,  C25D3/44 ,  C25D3/665 ,  C25D5/50 ,  C25D7/12 ,  C25D7/126 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/50

摘要： Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.

公开(公告)号：US07504155B2

公开(公告)日：2009-03-17

申请号：US10822343

申请日：2004-04-12

申请人： Meng Tao ,  Wiley P. Kirk

发明人： Meng Tao ,  Wiley P. Kirk

IPC分类号： B32B9/00

CPC分类号： H01L21/045 ,  H01L21/0485 ,  H01L21/28194 ,  H01L21/28512 ,  H01L21/50 ,  H01L29/45 ,  H01L29/456 ,  H01L29/517

摘要： The present invention relates generally to compositions, kits and methods of providing improved semiconductor surfaces free of dangling bonds and free of strained bonds. One method provides for preventing interfacial reactions between a semiconductor surface and metal or dielectric comprising the steps of preparing a passivated semiconductor surface using a valence-mending agent and depositing a layer of metal or dielectric on the valence-mended semiconductor surface. As further described, a semiconductor surface free of interfacial reactions between the surface and a second molecular species may include a semiconductor surface with one atomic layer of valence-mending atoms, wherein valence mending occurs after introducing the semiconductor surface to a passivating agent. The present invention also includes a kit for preventing interfacial reactions from occurring on a semiconductor surface comprising a passivating agent and an instructional manual.

摘要翻译： 本发明一般涉及提供无悬挂键并且没有应变键的改进的半导体表面的组合物，试剂盒和方法。 一种方法提供了防止半导体表面和金属或电介质之间的界面反应，包括以下步骤：使用化学修饰剂制备钝化的半导体表面，并且在修补半导体表面上沉积金属或电介质层。 如进一步描述的，在表面和第二分子物质之间没有界面反应的半导体表面可以包括具有一个原子层的修饰原子的半导体表面，其中在将半导体表面引入钝化剂之后发生化学修饰。 本发明还包括用于防止在包含钝化剂和教学手册的半导体表面上发生界面反应的试剂盒。

公开(公告)号：US20060286812A1

公开(公告)日：2006-12-21

申请号：US11507223

申请日：2006-08-21

申请人： Meng Tao ,  Muhammad Ali

发明人： Meng Tao ,  Muhammad Ali

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02052 ,  H01L21/306

摘要： Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states include reduction or elimination of an electrically active state of the surface, wherein, at the atomic level, the surface binding characteristics are changed. Passivation includes the termination of dangling bonds on the surface of the semiconductor material.

公开(公告)号：US20060189108A1

公开(公告)日：2006-08-24

申请号：US11360139

申请日：2006-02-23

申请人： Meng Tao

发明人： Meng Tao

IPC分类号： H01L21/20

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/28255

摘要： The present invention provides for compositions and methods of modifying a semiconductor structure, the structure including a semiconductor material, silicon, or germanium. The methods include modifying at the atomic scale at least one surface of the structure and forming a low-reactivity surface, contacting the at least one surface with at least one metal, and annealing the at least one metal to the at least one surface at a temperature ranging from room temperature to at least about 750 degrees Centigrade. The methods prevent the formation of high resistance phases of a metal silicide. The methods also prevent metal silicide formation at temperatures below at least about 500 degrees Centigrade and provide for only low resistance phases of the metal silicide at temperatures above at least about 500 degrees Centigrade. The methods further provide for compositions with improved performance.

摘要翻译： 本发明提供了修饰半导体结构的组合物和方法，该结构包括半导体材料，硅或锗。 所述方法包括以原子尺度修饰结构的至少一个表面并形成低反应性表面，使至少一个表面与至少一种金属接触，并且将至少一种金属退火至至少一个表面 温度范围从室温到至少约750摄氏度。 该方法防止形成金属硅化物的高电阻相。 该方法还防止在至少约500摄氏度以下的温度下形成金属硅化物，并且在至少约500摄氏度的温度下仅提供金属硅化物的低电阻相。 该方法进一步提供具有改进性能的组合物。

公开(公告)号：US20230299216A1

公开(公告)日：2023-09-21

申请号：US18315630

申请日：2023-05-11

申请人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

发明人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

IPC分类号： H01L31/0224 ,  C25D7/12 ,  C25D3/44 ,  C25D3/66 ,  C25D5/50 ,  H01L31/18

CPC分类号： H01L31/022458 ,  C25D7/12 ,  C25D3/44 ,  C25D3/665 ,  C25D5/50 ,  C25D7/126 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/50

摘要： Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.

公开(公告)号：US20180291477A1

公开(公告)日：2018-10-11

申请号：US15978473

申请日：2018-05-14

申请人： Meng Tao ,  Wen-Hsi Huang

发明人： Meng Tao ,  Wen-Hsi Huang

IPC分类号： C22B7/00 ,  C01B33/037 ,  C22B3/00 ,  C22B15/00 ,  C22B25/06

CPC分类号： C22B7/006 ,  C01B33/02 ,  C01B33/037 ,  C22B11/046 ,  C22B13/045 ,  C22B15/0063 ,  C22B25/06 ,  Y02P10/214 ,  Y02P10/228 ,  Y02P10/234 ,  Y02P10/236

摘要： Exemplary methods provide for recovery of valuable industrial metals in connection with recycling of silicon solar cells and modules. Silicon, copper, silver, and the like may be recovered separately, allowing for cost-effective recycling for silicon solar cells and modules.

公开(公告)号：US08212246B2

公开(公告)日：2012-07-03

申请号：US12540933

申请日：2009-08-13

申请人： Meng Tao ,  Xiaofei Han

发明人： Meng Tao ,  Xiaofei Han

IPC分类号： H01L29/10

CPC分类号： C25D3/56 ,  C25D5/50

摘要： Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

摘要翻译： 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中，向溶液中加入卤素前体，并在电化学电池的工作电极和对电极之间施加电势，以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中，向溶液中加入钇前体，以及在电化学电池的工作电极和对电极之间施加电势，以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。

公开(公告)号：US20120061836A1

公开(公告)日：2012-03-15

申请号：US12883170

申请日：2010-09-15

申请人： Lilly Q. Guo ,  Meng Tao ,  Kunhee Han

发明人： Lilly Q. Guo ,  Meng Tao ,  Kunhee Han

IPC分类号： H01L23/532 ,  B05D5/12 ,  H05K1/09

CPC分类号： C23C18/1258 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/1295

摘要： One example embodiment includes a method for applying a transparent conducting oxide. The method includes providing a solution, where the solution includes a solvent, a zinc precursor and an yttrium precursor. The method also includes spraying the solution on a heated substrate, where the heated substrate turns the solution into an yttrium-doped zinc oxide film. The method further includes annealing the film on the substrate in a controlled environment.

摘要翻译： 一个示例性实施例包括用于施加透明导电氧化物的方法。 该方法包括提供溶液，其中溶液包括溶剂，锌前体和钇前体。 该方法还包括将溶液喷涂在加热的基底上，其中加热的基底将溶液转变成掺杂钇的氧化锌膜。 该方法还包括在受控环境中对基底上的膜进行退火。