公开(公告)号：US20050271104A1

公开(公告)日：2005-12-08

申请号：US11046746

申请日：2005-02-01

Applicant: Kenichi Ono ,  Masayoshi Takemi

Inventor： Kenichi Ono ,  Masayoshi Takemi

IPC: H01S5/343 ,  H01S5/00 ,  H01S5/223 ,  H01S5/30

CPC classification number: B82Y20/00 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

Abstract: A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of p-type dopant lower in diffusivity than Zn of 2.5×1018 cm−3 or higher to attain desired device characteristics, for example, high power output and efficiency.

Abstract translation: 一种半导体激光器件包括：n型覆层，有源层和p型覆层，各自为III-V族化合物半导体，负载在n型GaAs的衬底上，p型带 p型包覆层上的III-V族化合物半导体的不连续还原层和带断层还原层上的p型GaAs覆盖层。 p型覆层，p型带不连续还原层和p型覆盖层各自掺杂有比Zn更低的扩散率的p型掺杂剂。 p型带不连续性还原层的扩散系数比2.5×10 18 -3 -3以上的Zn的p型掺杂剂的浓度低，以达到理想的器件特性， 例如，高功率输出和效率。

公开(公告)号：US20110177678A1

公开(公告)日：2011-07-21

申请号：US12889472

申请日：2010-09-24

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

IPC: H01L21/20

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3201 ,  H01S2304/04

Abstract: A method for manufacturing a nitride semiconductor device includes forming an n-type nitride-based semiconductor layer on a substrate; forming an active layer of a nitride-based semiconductors including In on the n-type nitride-based semiconductor layer using ammonia and a hydrazine derivative as group-V element source materials and a carrier gas including hydrogen; and forming a p-type nitride-based semiconductor layer on the active layer using ammonia and a hydrazine derivative as group-V element source materials.

Abstract translation: 一种氮化物半导体器件的制造方法包括：在基板上形成n型氮化物系半导体层; 使用氨和肼衍生物作为V族元素源材料和包含氢的载气在n型氮化物基半导体层上形成包括In的氮化物类半导体的有源层; 并使用氨和肼衍生物作为V族元素源材料在活性层上形成p型氮化物基半导体层。

公开(公告)号：US07825012B2

公开(公告)日：2010-11-02

申请号：US12501511

申请日：2009-07-13

Applicant: Akihito Ohno ,  Masayoshi Takemi

Inventor： Akihito Ohno ,  Masayoshi Takemi

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/00

CPC classification number: H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

Abstract: A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

Abstract translation: 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20100075483A1

公开(公告)日：2010-03-25

申请号：US12501511

申请日：2009-07-13

Applicant: Akihito Ohno ,  Masayoshi Takemi

Inventor： Akihito Ohno ,  Masayoshi Takemi

IPC: H01L21/20

CPC classification number: H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

Abstract: A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

Abstract translation: 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20090236589A1

公开(公告)日：2009-09-24

申请号：US12404647

申请日：2009-03-16

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC: H01L51/30 ,  H01L51/40

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/3063 ,  H01S2304/04

Abstract: A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1×1019 cm−3 or less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer by formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivatives as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1×1018 cm−3 or less.

Abstract translation: 氮化物半导体层叠结构包括：基板; 使用有机金属化合物作为III族元素源材料形成的第一p型氮化物半导体层，p型杂质源材料和作为V族元素源的氨，第一p型氮化物半导体中的氢浓度 层为1×10 19 cm -3以下; 以及通过使用有机金属化合物作为III族元素源材料，p型杂质源材料和氨以及作为V族元素的肼衍生物形成的第一p型氮化物半导体层上的第二p型氮化物半导体层 源材料，第二p型氮化物半导体层中的碳浓度为1×10 18 cm -3以下。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

Applicant: Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

Inventor： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC: H01L27/15

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

Abstract translation: 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US07172429B2

公开(公告)日：2007-02-06

申请号：US11326509

申请日：2006-01-06

Applicant: Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

Inventor： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

Abstract: The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

Abstract translation: 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20060166392A1

公开(公告)日：2006-07-27

申请号：US11326509

申请日：2006-01-06

Applicant: Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

Inventor： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

Abstract: The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

Abstract translation: 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20060091421A1

公开(公告)日：2006-05-04

申请号：US11175379

申请日：2005-07-07

Applicant: Kenichi Ono ,  Masayoshi Takemi

Inventor： Kenichi Ono ,  Masayoshi Takemi

IPC: H01L31/109

CPC classification number: H01S5/305 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device according to the present invention comprises: an n-band discontinuity reduction layer (n-BDR layer) disposed on an n-GaAs substrate and the n-BDR layer including an AlGaAs layer whose concentration of Si doped as an n-type impurity is in a range from 0.2×1018 cm−3 to 1.4×1018 cm−3; an n-type cladding layer of AlGaInP disposed on the n-BDR layer; an active layer including a quantum well disposed on the n-type cladding layer; and a p-type cladding layer of AlGaInP disposed on the active layer.

Abstract translation: 根据本发明的半导体激光器件包括：设置在n-GaAs衬底上的n波段不连续性还原层（n-BDR层），以及n-BDR层，其包含掺杂为n-Si衬底的Si的浓度的AlGaAs层， 类型杂质在0.2×10 30 -3 -3至1.4×10 18 cm -3范围内; 设置在n-BDR层上的AlGaInP的n型包覆层; 包括在n型包覆层上设置的量子阱的有源层; 以及设置在有源层上的AlGaInP的p型覆层。

公开(公告)号：US07763486B2

公开(公告)日：2010-07-27

申请号：US11950494

申请日：2007-12-05

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC: H01L33/02

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/325 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2304/04

Abstract: A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.

Abstract translation: 具有良好工作效率的氮化物半导体层叠结构包括由有机金属化合物形成的低电阻p型氮化物半导体层，包括氨和肼衍生物的V族元素和p型杂质材料 底物。 p型氮化物层的碳浓度不高于1×1018cm-3。