公开(公告)号：US08263999B2

公开(公告)日：2012-09-11

申请号：US11936846

申请日：2007-11-08

Applicant: Akihito Ohno ,  Kyosuke Kuramoto

Inventor： Akihito Ohno ,  Kyosuke Kuramoto

IPC: H01L33/001

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2304/04

Abstract: A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.

Abstract translation: 氮化物半导体发光器件包括p型接触层，p型接触层下面的p型中间层和p型中间层下面的p型覆层。 p型接触层和p型中间层之间以及p型中间层和p型覆层之间的带隙能量差分别为200meV以下。

公开(公告)号：US20110177678A1

公开(公告)日：2011-07-21

申请号：US12889472

申请日：2010-09-24

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

IPC: H01L21/20

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3201 ,  H01S2304/04

Abstract: A method for manufacturing a nitride semiconductor device includes forming an n-type nitride-based semiconductor layer on a substrate; forming an active layer of a nitride-based semiconductors including In on the n-type nitride-based semiconductor layer using ammonia and a hydrazine derivative as group-V element source materials and a carrier gas including hydrogen; and forming a p-type nitride-based semiconductor layer on the active layer using ammonia and a hydrazine derivative as group-V element source materials.

Abstract translation: 一种氮化物半导体器件的制造方法包括：在基板上形成n型氮化物系半导体层; 使用氨和肼衍生物作为V族元素源材料和包含氢的载气在n型氮化物基半导体层上形成包括In的氮化物类半导体的有源层; 并使用氨和肼衍生物作为V族元素源材料在活性层上形成p型氮化物基半导体层。

公开(公告)号：US07825012B2

公开(公告)日：2010-11-02

申请号：US12501511

申请日：2009-07-13

Applicant: Akihito Ohno ,  Masayoshi Takemi

Inventor： Akihito Ohno ,  Masayoshi Takemi

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/00

CPC classification number: H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

Abstract: A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

Abstract translation: 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20100075483A1

公开(公告)日：2010-03-25

申请号：US12501511

申请日：2009-07-13

Applicant: Akihito Ohno ,  Masayoshi Takemi

Inventor： Akihito Ohno ,  Masayoshi Takemi

IPC: H01L21/20

CPC classification number: H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

Abstract: A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

Abstract translation: 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20090236589A1

公开(公告)日：2009-09-24

申请号：US12404647

申请日：2009-03-16

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC: H01L51/30 ,  H01L51/40

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/3063 ,  H01S2304/04

Abstract: A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1×1019 cm−3 or less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer by formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivatives as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1×1018 cm−3 or less.

Abstract translation: 氮化物半导体层叠结构包括：基板; 使用有机金属化合物作为III族元素源材料形成的第一p型氮化物半导体层，p型杂质源材料和作为V族元素源的氨，第一p型氮化物半导体中的氢浓度 层为1×10 19 cm -3以下; 以及通过使用有机金属化合物作为III族元素源材料，p型杂质源材料和氨以及作为V族元素的肼衍生物形成的第一p型氮化物半导体层上的第二p型氮化物半导体层 源材料，第二p型氮化物半导体层中的碳浓度为1×10 18 cm -3以下。

公开(公告)号：US07172429B2

公开(公告)日：2007-02-06

申请号：US11326509

申请日：2006-01-06

Applicant: Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

Inventor： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

Abstract: The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

Abstract translation: 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20060166392A1

公开(公告)日：2006-07-27

申请号：US11326509

申请日：2006-01-06

Applicant: Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

Inventor： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

Abstract: The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

Abstract translation: 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20100289056A1

公开(公告)日：2010-11-18

申请号：US12835772

申请日：2010-07-14

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC: H01L33/12

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/0021 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is InxAlyGa1-x-yN, where x≧0, y≧0, and (x+y)

Abstract translation: 半导体激光器件包括n型包覆层，p型覆层和夹在n型覆层和p型覆层之间的有源层。 p型包覆层含有镁作为掺杂剂杂质。 此外，位于有源层和p型覆层之间的氮化物半导体材料的n型扩散阻挡层是In x Al y Ga 1-x-y N，其中x≥0，y≥0和（x + y） <1。 n型扩散阻挡层优选具有在5×1017cm-3至5×1019cm-3的范围内产生n型导电性的掺杂剂杂质的浓度。

公开(公告)号：US20080070387A1

公开(公告)日：2008-03-20

申请号：US11941195

申请日：2007-11-16

Applicant: Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

Inventor： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC: H01L21/20

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

Abstract: A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.

Abstract translation: 提供了一种能够在氮化镓衬底（GaN衬底）上形成具有优异的平坦度和优异的结晶度的氮化物半导体层的技术，同时提高了使用GaN衬底的半导体器件的可制造性。 制备氮化镓衬底，其具有相对于（0001）面在<1-100>方向上具有不小于0.1°且不大于1.0°的偏角的上表面。 然后，在氮化镓衬底的上表面上堆叠包括n型半导体层的多个氮化物半导体层，以形成诸如半导体激光器的半导体器件。

公开(公告)号：US20130327274A1

公开(公告)日：2013-12-12

申请号：US13785134

申请日：2013-03-05

Applicant: Akihito Ohno ,  Zempei Kawazu

Inventor： Akihito Ohno ,  Zempei Kawazu

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  H01L21/68757

Abstract: A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.

Abstract translation: 一种用于在通过化学气相沉积在衬底的表面上形成膜时支撑衬底的衬底支撑件。 基板支撑体包括具有用于容纳基板的凹部的石墨材料，在凹部上的多层膜，由SiC的第一脱气膜和层叠在一起的TaC或HfC的升华保护膜构成，第二脱气防止 位于除了凹部以外的石墨材料的部分上的SiC膜。