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    Self-moiré target design principles for measuring unresolved device-like pitches
    21.
    发明授权
    Self-moiré target design principles for measuring unresolved device-like pitches 有权

    公开(公告)号：US10101592B2

    公开(公告)日：2018-10-16

    申请号：US15829111

    申请日：2017-12-01

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yuri Paskover ,  Daniel Kandel

    IPC: G02B27/60 ,  G01B11/02 ,  G01B11/25

    Abstract: Metrology targets and methods are provided, which provide self-Moiré measurements of unresolved target features, i.e., interaction of electromagnetic fields re-scattered off elements within a single target layer provides signals with Moiré pitches that are measurable, although the actual target pitches are unresolved and possibly device-like. Targets comprise cell(s) with interlaced lines of elements having different device-like pitches which are selected to yield resolved Moiré pitch(es). Different target designs are presented for scatterometry and imaging metrology measurements, as well as for critical dimension, dose and focus, and pitch walk measurements—of device-like targets.

    Control of Amplitude and Phase of Diffraction Orders Using Polarizing Targets and Polarized Illumination
    23.
    发明申请
    Control of Amplitude and Phase of Diffraction Orders Using Polarizing Targets and Polarized Illumination 审中-公开

    公开(公告)号：US20180031470A1

    公开(公告)日：2018-02-01

    申请号：US15115752

    申请日：2016-06-01

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski

    IPC: G01N21/47 ,  G01B11/25

    CPC classification number: G01N21/47 ,  G01B11/24 ,  G01B11/2513 ,  G01B11/2536 ,  G01B2210/56 ,  G01N21/00 ,  G01N21/4788 ,  G01N2021/4792 ,  G03F7/70633 ,  G03F7/70683

    Abstract: Metrology scatterometry targets, optical systems and corresponding metrology tools and measurement methods are provided. Targets and/or optical systems are designed to enhance first order diffraction signals with respect to a zeroth order diffraction signal from the scatterometry target by creating a phase shift of 180° between zeroth order diffraction signals upon illumination of the scatterometry targets. For example, the targets may be designed to respond to polarized illumination by producing a first phase shift between zeroth order diffraction signals upon illumination thereof and optical systems may be designed to illuminate the target by polarized illumination and to analyze a resulting diffraction signal to yield a second phase shift between zeroth order diffraction signals upon illumination thereof. The phase shifts add up to 180° to cancel out the zeroth order diffraction signals, with either phase shift being between 0 and 180°.

    Focus Metrology and Targets Which Utilize Transformations Based on Aerial Images of the Targets
    24.
    发明申请
    Focus Metrology and Targets Which Utilize Transformations Based on Aerial Images of the Targets 审中-公开

    公开(公告)号：US20170212427A1

    公开(公告)日：2017-07-27

    申请号：US15302052

    申请日：2016-08-04

    Applicant: KLA-Tencor Corporation

    Inventor： Nadav Gutman ,  Yoel Feler ,  Vladimir Levinski ,  Oded Kaminsky

    IPC: G03F7/20

    CPC classification number: G03F7/70641

    Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

    Method and system for providing a target design displaying high sensitivity to scanner focus change
    27.
    发明授权
    Method and system for providing a target design displaying high sensitivity to scanner focus change 有权
    用于提供对扫描仪焦点变化显示高灵敏度的目标设计的方法和系统

    公开(公告)号：US09454072B2

    公开(公告)日：2016-09-27

    申请号：US14074412

    申请日：2013-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel

    IPC: G06F17/50 ,  G03F1/38 ,  G01B11/14 ,  G03F7/20 ,  G03F1/70

    CPC classification number: G03F1/38 ,  G01B11/14 ,  G03F1/70 ,  G03F7/70641 ,  G03F7/70683

    Abstract: A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

    Abstract translation: 分割的掩模包括一组单元结构，其中每个单元结构包括沿着第一方向具有不可解析的分割间距的一组特征，其中沿着第一方向的不可解析的分割间距小于光刻印刷工具的照明，其中 所述多个单元结构具有沿着垂直于所述第一方向的第二方向的间距，其中所述不可分辨的分割间距适于产生用于将所述光刻工具的最佳聚焦位置移动所选量的印刷图案，以实现所选择的等级 聚焦灵敏度。

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    28.
    发明申请
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 有权
    使用散射测量方法的重点测量

    公开(公告)号：US20160103946A1

    公开(公告)日：2016-04-14

    申请号：US14974732

    申请日：2015-12-18

    Applicant: KLA-Tencor Corporation

    Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

    IPC: G06F17/50 ,  G01N21/47

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

    Angle-resolved antisymmetric scatterometry
    29.
    发明授权
    Angle-resolved antisymmetric scatterometry 有权
    角分辨反对称散射法

    公开(公告)号：US09255895B2

    公开(公告)日：2016-02-09

    申请号：US14500162

    申请日：2014-09-29

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    IPC: G01N21/956 ,  G01B11/14 ,  G01B11/24 ,  G03F7/20

    CPC classification number: G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

    Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    Abstract translation: 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

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