公开(公告)号：US09490182B2

公开(公告)日：2016-11-08

申请号：US14574021

申请日：2014-12-17

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Shankar Krishnan ,  Kevin Peterlinz ,  Thaddeus Gerard Dziura ,  Noam Sapiens ,  Stilian Ivanov Pandev

IPC: G01B11/27 ,  H01L21/66 ,  G03F7/20 ,  G03F7/00

CPC classification number: G01B11/272 ,  G01B2210/56 ,  G03F7/0002 ,  G03F7/70141 ,  G03F7/70625 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

公开(公告)号：US20160282731A1

公开(公告)日：2016-09-29

申请号：US15177285

申请日：2016-06-08

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G03F9/00

CPC classification number: G03F9/7026 ,  G03F7/70641

Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the curve is determined and reported as an optimal focus for use in the photolithography system.

Abstract translation: 公开了用于确定光刻系统的最佳焦点的装置和方法。 从位于半导体晶片上的多个场中的特定目标获取多个光信号，并且使用包括不同聚焦值的不同工艺参数形成场。 从与焦点变化相关的光信号中提取特征。 作为焦点的函数，将曲线拟合到所提取的光信号特征。 曲线中的极限点被确定并报告为在光刻系统中使用的最佳焦点。

公开(公告)号：US20150176985A1

公开(公告)日：2015-06-25

申请号：US14574021

申请日：2014-12-17

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Shankar Krishnan ,  Kevin Peterlinz ,  Thaddeus Gerard Dziura ,  Noam Sapiens ,  Stilian Ivanov Pandev

IPC: G01B11/27

CPC classification number: G01B11/272 ,  G01B2210/56 ,  G03F7/0002 ,  G03F7/70141 ,  G03F7/70625 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

公开(公告)号：US20150046121A1

公开(公告)日：2015-02-12

申请号：US14449646

申请日：2014-08-01

Applicant: KLA-Tencor Corporation

Inventor： Thaddeus Gerard Dziura ,  Stilian Ivanov Pandev ,  Alexander Kuznetsov ,  Andrei V. Shchegrov

IPC: G01N21/956 ,  G01N21/95

CPC classification number: G01N21/956 ,  G01N21/9501 ,  G01N2201/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 从测量系统的一个或多个传感器的多个方位角处，从感兴趣的特定结构测量多个频谱信号。 基于为方位角获得的谱信号确定差谱。 通过分析差异谱确定和报告感兴趣的特定结构的质量指示。

公开(公告)号：US20150042984A1

公开(公告)日：2015-02-12

申请号：US14451320

申请日：2014-08-04

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7026 ,  G03F7/70641

Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A symmetric curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the symmetric curve is determined and reported as an optimal focus for use in the photolithography system.

Abstract translation: 公开了用于确定光刻系统的最佳焦点的装置和方法。 从位于半导体晶片上的多个场中的特定目标获取多个光信号，并且使用包括不同聚焦值的不同工艺参数形成场。 从与焦点变化相关的光信号中提取特征。 对称曲线适合于作为焦点的函数的光信号的提取特征。 确定对称曲线中的极值点并将其报告为用于光刻系统的最佳焦点。

公开(公告)号：US08843875B2

公开(公告)日：2014-09-23

申请号：US13887357

申请日：2013-05-05

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G06F17/50 ,  H01L21/66

CPC classification number: G06F17/5081 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optimized measurement model is determined based a model of parameter variations across a semiconductor wafer. A global, cross-wafer model characterizes a structural parameter as a function of location on the wafer. A measurement model is optimized by constraining the measurement model with the cross-wafer model of process variations. In some examples, the cross-wafer model is itself a parameterized model. However, the cross-wafer model characterizes the values of a structural parameter at any location on the wafer with far fewer parameters than a measurement model that treats the structural parameter as unknown at every location. In some examples, the cross-wafer model gives rise to constraints among unknown structural parameter values based on location on the wafer. In one example, the cross-wafer model relates the values of structural parameters associated with groups of measurement sites based on their location on the wafer.

Abstract translation: 基于半导体晶片上的参数变化的模型来确定优化的测量模型。 全球的跨晶圆模型将结构参数表征为晶片上位置的函数。 通过使用工艺变化的跨晶圆模型约束测量模型来优化测量模型。 在一些示例中，跨晶片模型本身是参数化模型。 然而，跨晶圆模型将晶片上任何位置的结构参数的值表示为具有比在每个位置处理结构参数为未知的测量模型少的参数的参数。 在一些示例中，跨晶片模型基于晶片上的位置引起未知结构参数值中的约束。 在一个示例中，跨晶片模型基于它们在晶片上的位置来关联与测量位置组相关联的结构参数的值。

公开(公告)号：US10935893B2

公开(公告)日：2021-03-02

申请号：US14453440

申请日：2014-08-06

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Andrei V. Shchegrov

IPC: G03F7/20 ,  H01L21/66 ,  G01N21/956

Abstract: Disclosed are apparatus and methods for determining process or structure parameters for semiconductor structures. A plurality of optical signals is acquired from one or more targets located in a plurality of fields on a semiconductor wafer. The fields are associated with different process parameters for fabricating the one or more targets, and the acquired optical signals contain information regarding a parameter of interest (POI) for a top structure and information regarding one or more underlayer parameters for one or more underlayers formed below such top structure. A feature extraction model is generated to extract a plurality of feature signals from such acquired optical signals so that the feature signals contain information for the POI and exclude information for the underlayer parameters. A POI value for each top structure of each field is determined based on the feature signals extracted by the feature extraction model.

公开(公告)号：US20190325571A1

公开(公告)日：2019-10-24

申请号：US16454531

申请日：2019-06-27

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G06T7/00 ,  G03F7/20

Abstract: Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique. Images collected from other wafers are transformed into synthetic measurement signals associated with the non-imaging measurement technique and a model-based measurement is employed to estimate values of parameters of interest based on the synthetic signals.

公开(公告)号：US10234271B2

公开(公告)日：2019-03-19

申请号：US16100843

申请日：2018-08-10

Applicant: KLA-Tencor Corporation

Inventor： Jiyou Fu ,  Noam Sapiens ,  Kevin A. Peterlinz ,  Stilian Ivanov Pandev

IPC: G01B11/00 ,  G01B11/24 ,  G03F7/00 ,  G01N21/21 ,  G01N21/956

Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

公开(公告)号：US10101674B2

公开(公告)日：2018-10-16

申请号：US15177285

申请日：2016-06-08

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G01N21/00 ,  G03F9/00 ,  G03F7/20

Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the curve is determined and reported as an optimal focus for use in the photolithography system.