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    Semiconductor device having through vias
    21.
    发明授权
    Semiconductor device having through vias 有权
    具有通孔的半导体器件

    公开(公告)号：US07602047B2

    公开(公告)日：2009-10-13

    申请号：US11979562

    申请日：2007-11-06

    Applicant: Yong-Chai Kwon ,  Dong-Ho Lee ,  In-Young Lee

    Inventor： Yong-Chai Kwon ,  Dong-Ho Lee ,  In-Young Lee

    IPC: H01L29/40

    CPC classification number: H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599 ,  H01L2224/05099

    Abstract: A method of fabricating a semiconductor device is provided. The method may include forming an insulating layer on a wafer. The wafer may have an active surface and an inactive surface which face each other, and the insulating layer may be formed on the active surface. A pad may be formed on the insulating layer, and a first hole may be formed in the insulating layer. A first hole insulating layer may then be formed on an inner wall of the first hole. A second hole may be formed under the first hole. The second hole may be formed to extend from the first hole into the wafer. A second hole insulating layer may be formed on an inner wall of the second hole. The semiconductor device fabricated according to the method may also be provided.

    Abstract translation: 提供一种制造半导体器件的方法。 该方法可以包括在晶片上形成绝缘层。 晶片可以具有彼此面对的有源表面和非活性表面，并且绝缘层可以形成在有源表面上。 可以在绝缘层上形成焊盘，并且可以在绝缘层中形成第一孔。 然后可以在第一孔的内壁上形成第一孔绝缘层。 可以在第一孔下方形成第二孔。 第二孔可以形成为从第一孔延伸到晶片。 第二孔绝缘层可以形成在第二孔的内壁上。 还可以提供根据该方法制造的半导体器件。

    Method of recycling spent flue gas denitration catalyst and method of determining washing time of spent flue gas denitration catalyst
    22.
    发明申请
    Method of recycling spent flue gas denitration catalyst and method of determining washing time of spent flue gas denitration catalyst 有权
    废烟气脱硝催化剂回收方法及废烟气脱硝催化剂洗涤时间的测定方法

    公开(公告)号：US20090005235A1

    公开(公告)日：2009-01-01

    申请号：US12007746

    申请日：2008-01-15

    Applicant: In-Young Lee ,  Jung-Bin Lee ,  Dong-Wha Kim

    Inventor： In-Young Lee ,  Jung-Bin Lee ,  Dong-Wha Kim

    IPC: B01J38/48 ,  B01J38/64 ,  G01N33/00

    CPC classification number: B01J23/92 ,  B01J21/20 ,  B01J38/48 ,  B01J38/60 ,  B01J38/62 ,  Y10S502/514 ,  Y10S502/515 ,  Y10T436/22

    Abstract: The present invention provides a method of recycling a spent flue gas denitration catalyst and a method of determining a washing time of the spent flue gas denitration catalyst. The method of recycling the spent flue gas denitration catalyst includes physically removing solids deposited in the spent flue gas denitration catalyst, removing poisoning substances deposited in the spent flue gas denitration catalyst by washing the spent flue gas denitration catalyst with a washing liquid for a washing time determined by measuring the hydrogen ion concentration of the washing liquid and drying the resulting spent flue gas denitration catalyst.

    Abstract translation: 本发明提供了废废气脱硝催化剂的再循环方法和废烟气脱硝催化剂的洗涤时间的测定方法。 废弃废气脱硝催化剂的再循环方法包括物理去除废烟道气脱硝催化剂中沉积的固体，通过用洗涤液洗涤废烟道脱硝催化剂洗涤废废气脱硝催化剂中的中毒物质，洗涤时间 通过测量洗涤液的氢离子浓度和干燥所得到的废烟气脱硝催化剂来测定。

    Variable phase shifter
    24.
    发明申请
    Variable phase shifter 审中-公开
    可变移相器

    公开(公告)号：US20080180191A1

    公开(公告)日：2008-07-31

    申请号：US12006996

    申请日：2008-01-08

    Applicant: Duk-Yong Kim ,  Kyoung-Ho Lee ,  In-Young Lee

    Inventor： Duk-Yong Kim ,  Kyoung-Ho Lee ,  In-Young Lee

    IPC: H01P1/18

    CPC classification number: H01P1/184

    Abstract: A variable phase shifter is provided. In the variable phase shifter, a fixed substrate, which is a dielectric substrate, is fixedly mounted in a housing and has at least one arc-shaped microstrip line on one surface thereof. A rotation substrate, which is a dielectric substrate, is rotatably mounted in the housing, in contact with the other surface of the fixed substrate and has a slot line on the contact surface thereof. Microstrip-slot line coupling takes place between the microstrip line and the slot line even during rotation. Both ends of the microstrip line are connected to an output port of the variable phase shifter and the slot line is electrically connected to an input port of the variable phase shifter, for receiving an input signal.

    Abstract translation: 提供可变移相器。 在可变移相器中，作为电介质基板的固定基板被固定地安装在壳体中，并且在其一个表面上具有至少一个弧形的微带线。 作为电介质基板的旋转基板可旋转地安装在壳体中，与固定基板的另一表面接触，并且在其接触表面上具有槽线。 即使在旋转期间，微带线耦合也在微带线和槽线之间进行。 微带线的两端连接到可变移相器的输出端口，并且时隙线电连接到可变移相器的输入端口，用于接收输入信号。

    Segregation reducing agent consisting of curdlan and alkaline solution and hydraulic composition containing the segregation reducing agent
    26.
    发明授权
    Segregation reducing agent consisting of curdlan and alkaline solution and hydraulic composition containing the segregation reducing agent 失效
    由凝乳糖和碱性溶液组成的分离还原剂和含有分离还原剂的水硬性组合物

    公开(公告)号：US06616754B1

    公开(公告)日：2003-09-09

    申请号：US09719593

    申请日：2000-12-12

    Applicant: Young-Hoon Park ,  In-Young Lee ,  Jung-Heon Lee ,  Mi-Kyoung Kim ,  Kyung-Hee Jung

    Inventor： Young-Hoon Park ,  In-Young Lee ,  Jung-Heon Lee ,  Mi-Kyoung Kim ,  Kyung-Hee Jung

    IPC: C04B2410

    CPC classification number: C04B24/38 ,  C04B40/0039 ,  C04B2103/0082 ,  C04B2111/00112 ,  C04B22/062

    Abstract: The present invention relates to a segregation reducing agent consisting of curdlan and alkaline materials and a hydraulic composition containing the segragation reducing agent, particularly, the present invention relates to the segregation reducing agent prepared by alkalifying a curdlan-producing fermentation broth per se or a curdlan powder with an alkaline material, and also relates to hydraulic compositions, concrete and mortar, comprising the segregation educing agent. This segregation reducing agent can provide a great segregation reduction effect for hydraulic compositions even at its small amount as well as guarantee the strength, filling ability and fluidity.

    Abstract translation: 本发明涉及由凝乳糖和碱性物质组成的偏析还原剂以及含有共缩合还原剂的水硬性组合物，特别是本发明涉及通过使产生凝乳糖的发酵液本身碱化或凝乳土制成的分离还原剂 具有碱性材料的粉末，还涉及包含偏析教育剂的水硬性组合物，混凝土和砂浆。 这种偏析还原剂即使在少量的水硬性组合物中也可以提供很大的偏析降低效果，并且保证强度，填充能力和流动性。

    Semiconductor package including semiconductor chip with through opening
    27.
    发明授权
    Semiconductor package including semiconductor chip with through opening 有权
    半导体封装包括半导体芯片通过开口

    公开(公告)号：US08941245B2

    公开(公告)日：2015-01-27

    申请号：US13533473

    申请日：2012-06-26

    Applicant: Chang-Cheol Lee ,  Hyun-Jun Kim ,  In-Young Lee ,  Ki-Kwon Jeong

    Inventor： Chang-Cheol Lee ,  Hyun-Jun Kim ,  In-Young Lee ,  Ki-Kwon Jeong

    IPC: H01L23/52 ,  H01L23/13 ,  H01L25/065 ,  H01L23/498 ,  H01L21/56

    CPC classification number: H01L23/13 ,  H01L21/565 ,  H01L23/49816 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1815

    Abstract: A semiconductor package comprises a substrate having a first opening formed therethrough, a first semiconductor chip stacked on the substrate in a flip chip manner and having a second opening formed therethrough, a second semiconductor chip stacked on the first semiconductor chip in a flip chip manner and having a third opening formed therethrough, and a molding material covering the first semiconductor chip and the second semiconductor chip and filling up a space between the substrate and the first semiconductor chip, a space between the first semiconductor chip and the second semiconductor chip, and filling each of the first opening, the second opening, and the third opening.

    Abstract translation: 半导体封装包括具有通过其形成的第一开口的衬底，以倒装芯片方式堆叠在衬底上并具有穿过其中的第二开口的第一半导体芯片，以倒装芯片方式堆叠在第一半导体芯片上的第二半导体芯片，以及 具有通过其形成的第三开口，以及覆盖所述第一半导体芯片和所述第二半导体芯片并填充所述基板和所述第一半导体芯片之间的空间的模塑材料，所述第一半导体芯片和所述第二半导体芯片之间的空间，以及填充 第一开口，第二开口和第三开口中的每一个。

    Variable phase shifter
    29.
    发明申请
    Variable phase shifter 审中-公开
    可变移相器

    公开(公告)号：US20110001580A9

    公开(公告)日：2011-01-06

    申请号：US12006996

    申请日：2008-01-08

    Applicant: Duk-Yong Kim ,  Kyoung-Ho Lee ,  In-Young Lee

    Inventor： Duk-Yong Kim ,  Kyoung-Ho Lee ,  In-Young Lee

    IPC: H01P1/18

    CPC classification number: H01P1/184

    Abstract: A variable phase shifter is provided. In the variable phase shifter, a fixed substrate, which is a dielectric substrate, is fixedly mounted in a housing and has at least one arc-shaped microstrip line on one surface thereof. A rotation substrate, which is a dielectric substrate, is rotatably mounted in the housing, in contact with the other surface of the fixed substrate and has a slot line on the contact surface thereof. Microstrip-slot line coupling takes place between the microstrip line and the slot line even during rotation. Both ends of the microstrip line are connected to an output port of the variable phase shifter and the slot line is electrically connected to an input port of the variable phase shifter, for receiving an input signal.

    Abstract translation: 提供可变移相器。 在可变移相器中，作为电介质基板的固定基板被固定地安装在壳体中，并且在其一个表面上具有至少一个弧形的微带线。 作为电介质基板的旋转基板可旋转地安装在壳体中，与固定基板的另一表面接触，并且在其接触表面上具有槽线。 即使在旋转期间，微带线耦合也在微带线和槽线之间进行。 微带线的两端连接到可变移相器的输出端口，并且时隙线电连接到可变移相器的输入端口，用于接收输入信号。

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