Apparatus for demagnification or full-size ion projection lithography
    21.
    发明授权
    Apparatus for demagnification or full-size ion projection lithography 失效
    用于缩小或全尺寸离子投影光刻的设备

    公开(公告)号:US4894549A

    公开(公告)日:1990-01-16

    申请号:US164106

    申请日:1988-03-04

    Applicant: Gerhard Stengl

    Inventor: Gerhard Stengl

    CPC classification number: H01J37/3007

    Abstract: An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

    Abstract translation: 离子投影光刻系统在掩模和基板之间提供浸没透镜,浸没透镜和离子源之间的掩模和掩模和源之间的ExB薄膜,但是与位于接近透光点和焦点的交叉点或焦点 浸没透镜,使得不需要的质量的离子通过冲击到隔膜而从光束中被排斥,同时利用ExB滤光器的低磁场强度和电场强度。

    Field composable electrostatic lens system
    23.
    发明授权
    Field composable electrostatic lens system 失效
    现场可组合静电透镜系统

    公开(公告)号:US5869838A

    公开(公告)日:1999-02-09

    申请号:US712417

    申请日:1996-09-11

    Applicant: Gerhard Stengl

    Inventor: Gerhard Stengl

    CPC classification number: H01J37/12 H01J2237/3175

    Abstract: An electrostatic lens system consisting of several electrodes and a novel method of making same. The invention relates to a lithography apparatus that includes a field composable lens where at least one lens electrode has a novel structure, said structure comprising an outer support structure, an insulating intermediate part and a conductive inner part composed of a number of segment-like subelectrodes that can be individually powered, if necessary, slightly differently to produce desired individual electrostatic subfields to be superimposed to the lens field. With the field composable lens design, it has been successfully demonstrated that a number of shape and alignment errors of lens components can be corrected by supplying slightly different voltages to individual subelectrodes, thus optimizing the overall lens performance (in view of its optical properties). The lens components may be manufactured on less expensive and readily available conventional precision machinery rather than expensive and rarely available high precision equipment.

    Abstract translation: 由多个电极构成的静电透镜系统及其制造方法。 本发明涉及一种光刻设备,其包括场可组合透镜,其中至少一个透镜电极具有新颖的结构,所述结构包括外支撑结构,绝缘中间部分和由许多片状子电极组成的导电内部部分 如果需要,可以单独地供电,稍微不同以产生要叠加到透镜场的期望的各个静电子场。 通过现场可组合的透镜设计,已经成功地证明了可以通过向各个子电极提供稍微不同的电压来校正透镜部件的多个形状和对准误差,从而优化整体透镜性能(鉴于其光学性质)。 透镜部件可以以不那么昂贵且易于获得的常规精密机械制造,而不是昂贵且很少可用的高精度设备。

    Charged particle system
    24.
    发明授权
    Charged particle system 有权
    带电粒子系统

    公开(公告)号:US08049189B2

    公开(公告)日:2011-11-01

    申请号:US12090636

    申请日:2006-10-20

    Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

    Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜(403),其包括具有径向内端(411')的外极片(411)和设置有最下端(412')的内极片(412) 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极(451)和第二电极(450)的聚焦静电透镜(450) 以及控制器(C),被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

    Particle-Optical System
    25.
    发明申请
    Particle-Optical System 有权
    粒子光学系统

    公开(公告)号:US20100270474A1

    公开(公告)日:2010-10-28

    申请号:US11990067

    申请日:2006-08-08

    CPC classification number: H01J37/12 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

    Abstract translation: 多子束多列粒子光学系统技术领域本发明涉及一种多子束多列粒子光学系统,该多子束多列粒子光学系统包括多个列,其被布置成阵列以同时暴露衬底,每个列具有光轴,并且包括:子束产生装置,其包括至少一个 用于产生多个带电粒子束的图案的多孔板,以及包括至少一个电极元件的静电透镜装置; 所述至少一个电极元件具有由面向光轴的内周边缘限定的孔,所述孔在与所述光轴正交的平面中具有中心和预定形状; 其中在所述多个列中的至少一个列中,所述孔的预定形状是非圆形形状,其具有围绕所述孔的中心的来自理想圆的突起和凹陷中的至少一个。

    Pattern Lock System for Particle-Beam Exposure Apparatus
    26.
    发明申请
    Pattern Lock System for Particle-Beam Exposure Apparatus 有权
    用于粒子束曝光装置的图案锁定系统

    公开(公告)号:US20090146082A1

    公开(公告)日:2009-06-11

    申请号:US11719320

    申请日:2005-11-15

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3045 H01J37/3177

    Abstract: In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

    Abstract translation: 在粒子束装置的图案锁定系统中,其中通过投影系统的至少两个连续的投影台进行图案的成像,参考标记在登记装置上成像以确定粒子束的位置, 在由非最终投影仪舞台产生的参考标记的中间图像的位置处,其中登记装置位于中间成像平面的标称位置的位置。 此外,为了在登记装置上产生扫描运动,根据时间相关的电压,通过设置在图案定义装置中的偏转装置横向移动参考子束。

    Charged-Particle Exposure Apparatus
    27.
    发明申请
    Charged-Particle Exposure Apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US20080258084A1

    公开(公告)日:2008-10-23

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Particle-optical projection system
    28.
    发明申请
    Particle-optical projection system 有权
    粒子投影系统

    公开(公告)号:US20070125956A1

    公开(公告)日:2007-06-07

    申请号:US11700468

    申请日:2007-01-31

    Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统中,通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中,所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位(Z表示基本上平行于光轴的轴向坐标),而不改变图像的尺寸,系统包括用于测量Z的位置检测器 - 位置,以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

    Ion-optical imaging system
    29.
    发明授权
    Ion-optical imaging system 失效
    离子光学成像系统

    公开(公告)号:US5436460A

    公开(公告)日:1995-07-25

    申请号:US058911

    申请日:1993-04-26

    CPC classification number: H01J37/3007

    Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is made up of a preferably accelerating Einzel lens proximal to the mask and an asymmetric accelerating Einzel proximal to the wafer.

    Abstract translation: 用于晶片上掩模结构的离子束成像的系统具有设置在掩模和晶片之间的双透镜,其由靠近掩模的优选加速的Einzel透镜和靠近该掩模的不对称加速的Einzel构成 晶圆。

    Ion-optical imaging system
    30.
    发明授权
    Ion-optical imaging system 失效
    离子光学成像系统

    公开(公告)号:US5350924A

    公开(公告)日:1994-09-27

    申请号:US912099

    申请日:1992-07-10

    CPC classification number: H01J37/3007

    Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.

    Abstract translation: 用于晶片上掩模结构的离子束成像的系统具有在掩模和晶片之间设置的双透镜,其为以下组合之一:(a)两个加速的Einzel透镜; (b)加速浸没透镜和减速浸没透镜,其中加速浸没透镜是跟随掩模的第一收集透镜; (c)加速浸没透镜和减速非对称Einzel透镜,其中加速浸没透镜是跟随掩模的第一收集透镜; (d)加速非对称Einzel透镜和减速浸没透镜,其中加速非对称Einzel透镜是跟随掩模的第一收集透镜; 和(e)加速的非对称Einzel透镜和减速的非对称Einzel透镜,其中加速非对称的Einzel透镜是跟随掩模的第一个收集透镜。

Patent Agency Ranking