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公开(公告)号:US20210057222A1
公开(公告)日:2021-02-25
申请号:US16633808
申请日:2018-07-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Ryuji SUGIURA , Yuta KONDOH , Naoki UCHIYAMA
IPC: H01L21/268 , H01L21/683 , H01L25/065
Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.
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公开(公告)号:US20210053158A1
公开(公告)日:2021-02-25
申请号:US16605300
申请日:2018-04-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Tomoya TAGUCHI
IPC: B23K26/364 , B23K26/38 , B23K26/53 , H01L21/3065 , H01L21/78 , H01L21/311
Abstract: An object cutting method includes: a first step of preparing an object to be processed including a single crystal silicon substrate and a functional device layer provided on a first main surface side and forming an etching protection layer on a second main surface of the object; a second step of irradiating the object with laser light to form at least one row of modified regions in the single crystal silicon substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a surface of the etching protection layer; and a third step of performing dry etching on the object from the second main surface side, in a state in which the etching protection layer is formed on the second main surface, to form a groove opening to the second main surface.
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公开(公告)号:US20170106476A1
公开(公告)日:2017-04-20
申请号:US15301451
申请日:2015-03-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Takafumi OGIWARA
IPC: B23K26/53 , C03B33/02 , B23K26/082 , B23K26/03 , B23K26/064
CPC classification number: B23K26/53 , B23K26/03 , B23K26/0622 , B23K26/064 , B23K26/0738 , B23K26/082 , B23K2101/40 , B23K2103/52 , B23K2103/54 , B23K2103/56 , C03B33/0222 , C03B33/07
Abstract: A laser processing device includes a laser light source, a converging optical system, a controller, and a reflective spatial light modulator. The controller and the reflective spatial light modulator, while using an aberration as a reference aberration, the aberration occurring when laser light is converged at a converging position with an amount of aberration correction in a state in which an ideal converging position is shifted by a predetermined distance to a laser light entrance side from the converging position, adjusts the aberration such that a first converging length longer than a reference converging length of the reference aberration is obtained and a first converging intensity less than a reference converging intensity of the reference aberration is obtained, when a modified region is formed within a first region closest to a front face of an object to be processed.
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公开(公告)号:US20140227860A1
公开(公告)日:2014-08-14
申请号:US14256370
申请日:2014-04-18
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Aiko NAKAGAWA
IPC: H01L21/78
CPC classification number: H01L21/78 , B23K26/03 , B23K26/0622 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , C03B33/0222 , H01L21/67092
Abstract: Fractures (17a, 17b) are generated from modified regions (7a, 7b) to front and rear faces (12a, 12b) of a object to be processed (1), respectively, while an unmodified region (2) is interposed between the modified regions (7a, 7b). This can prevent fractures from continuously advancing in the thickness direction of a silicon substrate (12) when forming a plurality of rows of modified regions (7). By generating a stress in the object (1), the fractures (17a, 17b) are connected to each other in the unmodified region (2), so as to cut the object (1). This can prevent fractures from meandering in the rear face (12b) of the object (1) and so forth, whereby the object (1) can be cut accurately along a line to cut the object (5).
Abstract translation: 从修饰区域(7a,7b)分别向被处理物体(1)的前后面(12a,12b)分别产生断裂(17a,17b),而未改性区域(2) 区域(7a,7b)。 这可以防止当形成多行修改区域(7)时在硅衬底(12)的厚度方向上的断裂继续前进。 通过在物体(1)中产生应力,裂纹(17a,17b)在未修改区域(2)中彼此连接,从而切割物体(1)。 这可以防止在物体(1)的后表面(12b)等中产生蜿蜒的折痕,从而可以沿着切割物体(5)的线被精确地切割物体(1)。
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公开(公告)号:US20250091164A1
公开(公告)日:2025-03-20
申请号:US18924368
申请日:2024-10-23
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Junji OKUMA
IPC: B23K26/53 , B23K26/04 , B23K26/06 , B23K26/0622 , B23K26/08 , B23K103/00
Abstract: A laser processing apparatus includes a support portion, a first laser processing head, a second laser processing head, a first vertical movement mechanism, a second vertical movement mechanism, a first horizontal movement mechanism, a second horizontal movement mechanism, and a controller configured to control rotation of the support portion, emission of a first and a second laser lights from the first and the second laser processing heads, and movement of a first and a second focusing points.
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公开(公告)号:US20230343646A1
公开(公告)日:2023-10-26
申请号:US17799389
申请日:2021-02-05
Applicant: Kyoritsu Chemical & Co., Ltd. , HAMAMATSU PHOTONICS K.K.
Inventor: Daisuke KURITA , Yasunobu MATSUMOTO , Takeshi SAKAMOTO , Iku SANO
IPC: H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/56
CPC classification number: H01L21/78 , H01L21/6836 , H01L21/268 , H01L21/6715 , H01L21/56
Abstract: A workpiece cutting method includes: a first step of pasting an expandable sheet on a workpiece; a second step of irradiating, after the first step, the workpiece with laser light to form a modified region and expanding the expandable sheet to divide the workpiece into a plurality of chips, and meanwhile, to form a gap disposed between the plurality of chips and extending to a side surface of the workpiece; a third step of irradiating the expandable sheet with an ultraviolet light after the first step; a fourth step of filling, after the second step and the third step, the gap with resin from an outer edge part of the workpiece including the side surface; a fifth step of curing the resin after the fourth step; and a sixth step of taking out the chips from above the expandable sheet after the fifth step.
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公开(公告)号:US20230054570A1
公开(公告)日:2023-02-23
申请号:US17794066
申请日:2021-01-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Koji KUNO
Abstract: The controller executes a first process of moving a support portion so that inside the peripheral edge of an object, a focusing position moves along the peripheral edge, thereby forming a first modified region, and following the first process, executes a second process of moving the support portion so that the focusing position moves, thereby forming a second modified region The measurement data acquiring portion, at execution of the first process, acquires measurement data associated with position information on a position of the object. The controller, at execution of the second process, causes the driving portion to shift a position of the condenser lens, the position being along the direction of an optical axis, to an initial position based on the measurement data acquired in the first process, before or when the focusing position moves from outside of the object to inside thereof.
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公开(公告)号:US20220084827A1
公开(公告)日:2022-03-17
申请号:US17534835
申请日:2021-11-24
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Ryuji Sugiura , Yuta Kondoh , Naoki Uchiyama
IPC: H01L21/268 , H01L21/683 , H01L25/065
Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.
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公开(公告)号:US20220009039A1
公开(公告)日:2022-01-13
申请号:US17289069
申请日:2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Katsuhiro KOREMATSU , Takeshi SAKAMOTO
IPC: B23K26/53 , B23K26/08 , H01L21/268
Abstract: A laser processing apparatus irradiates a target with a laser light to form a modified region along a virtual plane in the target. The laser processing apparatus includes a support portion, an irradiation portion, a movement mechanism, and a controller. The controller performs a first processing process of irradiating a first portion in the target with the laser light under a first processing condition, and a second processing process of irradiating a second portion more on an inner side than the first portion in the target with the laser light under a second processing condition different from the first processing condition, after the first processing process.
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公开(公告)号:US20220009032A1
公开(公告)日:2022-01-13
申请号:US17288601
申请日:2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi SAKAMOTO , Junji OKUMA
IPC: B23K26/10 , B23K37/047 , B23K26/08 , B23K26/06
Abstract: A laser processing apparatus includes: a support portion configured to move along a first direction; a first moving portion configured to move along a second direction orthogonal to the first direction; a first attachment portion configured to move along a third direction orthogonal to the first direction and the second direction; a first laser processing head attached to the first attachment portion; a light source unit; and a first mirror attached to the first moving portion. The first laser processing head includes a first entrance portion and a first condensing portion. The light source unit includes a first emission portion. The first mirror is attached to the first moving portion to face the first emission portion in the second direction and face the first entrance portion in the third direction.
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