公开(公告)号：US20090027810A1

公开(公告)日：2009-01-29

申请号：US11880583

申请日：2007-07-23

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

摘要翻译： 我们描述形成使用自旋角动量转移的STT-MTJ MRAM单元的结构和方法，作为改变自由层的磁矩方向的机制。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。 分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

公开(公告)号：US07449345B2

公开(公告)日：2008-11-11

申请号：US10868715

申请日：2004-06-15

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

IPC分类号： G11B5/72 ,  H01L41/06

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/10 ,  H01L43/12

摘要： An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E−6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.

摘要翻译： MRAM阵列或TMR读取头中的MTJ由具有较低的互扩散阻挡层的覆盖层，中间氧吸气层和接触顶部导体的上部金属层组成。 复合覆盖层特别适用于中等自旋极化自由层，例如Fe含量约为17.5至20原子％的NiFe层。 封端层优选具有Ru / Ta / Ru构型，其中下Ru层的厚度约为10至30埃，Ta层约为30埃厚。 结果，在MRAM阵列的MTJ中，具有约40％的高dR / R达到小于约1.0E-6的低磁致伸缩。 通过在8至10埃厚的Al层上通过原位ROX工艺形成的AlOx隧道势垒层获得最佳结果。

公开(公告)号：US20080225583A1

公开(公告)日：2008-09-18

申请号：US11717347

申请日：2007-03-13

申请人： Yimin Guo ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Yimin Guo ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11C11/15 ,  H01L21/00

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.

摘要翻译： 我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。 该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用包含被CoFeB层夹在中间的Ta或Hf薄层的新型自由层。 该装置的特征在于DR / R的值在大约95％和105％之间。

公开(公告)号：US07423848B2

公开(公告)日：2008-09-09

申请号：US11881628

申请日：2007-07-27

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/39

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3948 ,  H01F10/3259 ,  H01F10/3263 ,  H01F41/306 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.

摘要翻译： 公开了具有改进的MR比和增加的电阻的CPP-GMR自旋值传感器结构。 除了某些被钉扎层，铜间隔物和Ta覆盖层之外的所有层通过在沉积期间向Ar溅射气体添加部分O 2 O 2压力而进行氧掺杂。 氧掺杂的CoFe自由和被钉扎层被制成稍微更厚以抵消由氧掺杂剂引起的小的磁矩的减小。 在MnPt AFM层中掺入氧增强了交换偏压强度。 诸如纳米氧化物层之类的插入层被包括在一个或多个游离，钉扎和间隔层中以增加界面散射。 除了铜间隔物之外的所有层的厚度可以增加以增加体散射。 本发明的CPP-GMR单自旋阀或双自旋阀的电阻增加了三倍，MR比增加了2〜3％。

公开(公告)号：US07323215B2

公开(公告)日：2008-01-29

申请号：US10845888

申请日：2004-05-14

申请人： Min Li ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： B05D5/12

CPC分类号： G11B5/39 ,  Y10T428/1129 ,  Y10T428/12931

摘要： By using a composite free layer of Fe25% Co/NiFe, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 通过使用Fe25％Co / NiFe的复合自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US07234228B2

公开(公告)日：2007-06-26

申请号：US10308597

申请日：2002-12-03

申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

IPC分类号： G11B5/187 ,  G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

摘要翻译： 一种形成具有新型种子层和合成反铁磁固定层的底部自旋阀传感器元件的方法。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

公开(公告)号：US07211447B2

公开(公告)日：2007-05-01

申请号：US11080868

申请日：2005-03-15

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

IPC分类号： H01L21/00

CPC分类号： H01L43/12

摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.

摘要翻译： 公开了一种在MRAM阵列中形成高性能MTJ的方法。 溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。 一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。 所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

公开(公告)号：US06993827B2

公开(公告)日：2006-02-07

申请号：US10460086

申请日：2003-06-12

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/187

CPC分类号： G11B5/3906 ,  G11B7/0053 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052

摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (

摘要翻译： 提供底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例及其制造方法。 在一个实施例中，传感器具有超薄（<20埃）单自由层和复合高电导层（HCL），提供高输出，低矫顽力和正磁致伸缩。 在第二实施例中，传感器具有复合自由层和单个HCL，其也具有高输出，低矫顽力和正磁致伸缩。 这些传感器能够读取超过60Gb / in <2>的密度。

公开(公告)号：US06857180B2

公开(公告)日：2005-02-22

申请号：US10104802

申请日：2002-03-22

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US06816346B2

公开(公告)日：2004-11-09

申请号：US10791015

申请日：2004-03-02

申请人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

发明人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.