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公开(公告)号：US08614449B1
公开(公告)日：2013-12-24
申请号：US11548620
申请日：2006-10-11
Applicant: Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
Inventor： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC: H01L27/15
CPC classification number: H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
Abstract translation: 用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。 相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。
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公开(公告)号：US08143112B1
公开(公告)日：2012-03-27
申请号：US12696965
申请日：2010-01-29
Applicant: Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
Inventor： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC: H01L21/20
CPC classification number: H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。
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23.发明授权公开(公告)号：US07897420B2
公开(公告)日：2011-03-01
申请号：US11956962
申请日：2007-12-14
Applicant: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
Inventor： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
CPC classification number: H01L33/20 , H01L33/0095 , H01L33/08 , H01L33/22
Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Abstract translation: 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。
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公开(公告)号：US20080087875A1
公开(公告)日：2008-04-17
申请号：US11548642
申请日：2006-10-11
Applicant: Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
Inventor： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC: H01L29/06
CPC classification number: H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。
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25.发明申请公开(公告)号：US20070190676A1
公开(公告)日：2007-08-16
申请号：US11690443
申请日：2007-03-23
Applicant: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
Inventor： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC: H01L21/00
CPC classification number: H01L33/22 , H01L33/0095 , H01L33/08 , H01L33/20
Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Abstract translation: 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。
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Patent Agency Ranking
公开(公告)号：US08546818B2
公开(公告)日：2013-10-01
申请号：US13401446
申请日：2012-02-21
Applicant: Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
Inventor： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC: H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L29/22 , H01L31/072 , H01L33/00
CPC classification number: H01L33/14 , H01L27/15 , H01L33/38 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/0603 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。
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公开(公告)号：US08507302B1
公开(公告)日：2013-08-13
申请号：US11548624
申请日：2006-10-11
Applicant: Chen-Fu Chu , Hao-Chun Cheng , Trung Tri Doan , Feng-Hsu Fan
Inventor： Chen-Fu Chu , Hao-Chun Cheng , Trung Tri Doan , Feng-Hsu Fan
IPC: H01L21/301
CPC classification number: H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
Abstract translation: 用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。 相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。
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28.发明授权公开(公告)号：US08466479B2
公开(公告)日：2013-06-18
申请号：US12986946
申请日：2011-01-07
Applicant: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
Inventor： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
CPC classification number: H01L33/20 , H01L33/0095 , H01L33/08 , H01L33/22
Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Abstract translation: 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。
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公开(公告)号：US20120097985A1
公开(公告)日：2012-04-26
申请号：US12909367
申请日：2010-10-21
Applicant: Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao , Chen-Fu Chu , Hao-Chun Cheng
Inventor： Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao , Chen-Fu Chu , Hao-Chun Cheng
CPC classification number: H01L33/54 , H01L25/0753 , H01L33/56 , H01L2224/48091 , H01L2224/48464 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) package includes a substrate, a light emitting diode (LED) die mounted to the substrate, a frame on the substrate, a wire bonded to the light emitting diode (LED) die and to the substrate, and a transparent dome configured as a lens encapsulating the light emitting diode (LED) die. A method for fabricating a light emitting diode (LED) package includes the steps of: providing a substrate; forming a frame on the substrate; attaching a light emitting diode (LED) die to the substrate; wire bonding a wire to the light emitting diode (LED) die and to the substrate; and dispensing a transparent encapsulation material on the frame configured to form a transparent dome and lens for encapsulating the light emitting diode (LED) die.
Abstract translation: 发光二极管（LED）封装包括：衬底，安装到衬底的发光二极管（LED）裸片，衬底上的框架，结合到发光二极管（LED）管芯和衬底的引线，以及 透明圆顶被配置为封装发光二极管（LED）裸片的透镜。 一种制造发光二极管（LED）封装的方法，包括以下步骤：提供衬底; 在基板上形成框架; 将发光二极管（LED）裸片附接到所述基板; 将导线引线连接到发光二极管（LED）管芯和衬底; 并且在所述框架上分配透明封装材料，所述框架被配置成形成用于封装所述发光二极管（LED）裸片的透明圆顶和透镜。
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公开(公告)号：US08148733B2
公开(公告)日：2012-04-03
申请号：US13161254
申请日：2011-06-15
Applicant: Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
Inventor： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC: H01L27/15 , H01L29/26 , H01L31/12 , H01L29/22 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/109 , H01L33/00 , H01L31/072
CPC classification number: H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。
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