公开(公告)号：US10209616B2

公开(公告)日：2019-02-19

申请号：US15193992

申请日：2016-06-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  Ordos Yuansheng Optoelectronics Co., Ltd.

Inventor： Chaobo Zhang ,  Liangliang Liu ,  Hongwei Tian ,  Nini Bai ,  Shuai Han ,  Feng Kang ,  Liang Tang ,  Chuoluopeng ,  Tiangui Min

IPC: G03F1/38 ,  G03F1/52 ,  G03F7/20

Abstract: The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.

公开(公告)号：US09865517B2

公开(公告)日：2018-01-09

申请号：US15209303

申请日：2016-07-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ying Liu ,  Hongwei Tian ,  Tuo Sun

IPC: H01L27/12 ,  H01L21/66 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L22/34 ,  G02F1/1362 ,  G02F1/1368 ,  G02F2001/136254 ,  H01L27/124

Abstract: The present disclosure provides a test element group, an array substrate, a test device and a test method. The test element group includes an array of Thin Film Transistors (TFTs), in which first electrodes of the TFTs in each row are connected to a first connection end, second electrodes of the TFTs in each column are connected to a second connection end, and third electrodes of all of the TFTs in the array are connected to an identical third connection end. The first electrode, the second electrode and the third electrode correspond to the source electrode, the drain source and the gate source of the TFT.

公开(公告)号：US20170294345A1

公开(公告)日：2017-10-12

申请号：US15512372

申请日：2016-03-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaoyong Lu ,  Hongwei Tian ,  Yueping Zuo ,  Xiaowei Xu ,  Wenqing Xu ,  Chunping Long

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/02063 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/67 ,  H01L21/76814

Abstract: Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.

公开(公告)号：US20170040464A1

公开(公告)日：2017-02-09

申请号：US14913048

申请日：2015-07-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei Tian ,  Yanan Niu ,  Zuqiang Wang ,  Liang Sun

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L21/306 ,  H01L21/225 ,  H01L29/10 ,  H01L29/66 ,  H01L21/30

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/2251 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/77 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78696

Abstract: Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.

Abstract translation: 本发明的实施例公开了薄膜晶体管，薄膜晶体管，阵列基板和显示装置的制造方法。 薄膜晶体管的制造方法包括形成有源层的步骤，形成有源层的步骤包括：分别在第一多晶硅层上形成第一多晶硅层和第二多晶硅层， 以及将掺杂剂离子添加到第二多晶硅层和第一多晶硅层的上表面层。 通过使用薄膜晶体管的制造方法，可以降低薄膜晶体管的缺陷状态和界面的不稳定因素，从而提高LTPS薄膜晶体管的稳定性并获得阵列基板和具有更稳定性能的显示装置。

公开(公告)号：US12217633B2

公开(公告)日：2025-02-04

申请号：US17041811

申请日：2020-02-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yanan Niu ,  Hongwei Tian ,  Zhongyuan Sun ,  Jing Niu ,  Lei Chen ,  Wei Huang ,  Zhiqiang Jiao

IPC: G09F9/30 ,  H10K71/00 ,  H10K77/10 ,  H10K102/00

Abstract: The present disclosure provides a display panel and a manufacturing method of the display panel, and a display apparatus, and belongs to the field of display technology. The display panel of the present disclosure includes a flexible substrate and a support substrate, wherein the support substrate supports the flexible substrate; a plurality of display units are provided on the flexible substrate; the display panel further includes: a first magnetic unit; a second magnetic unit; the first magnetic unit and the second magnetic unit are used for jointing the flexible substrate to the support substrate through a magnetic field therebetween.

公开(公告)号：US12120906B2

公开(公告)日：2024-10-15

申请号：US17630116

申请日：2021-04-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongwei Tian ,  Yanan Niu ,  Hejin Wang ,  Pinfan Wang ,  Fangxu Cao ,  Zheng Liu

IPC: H10K59/12 ,  H10K50/844 ,  H10K59/131 ,  H10K71/00 ,  H10K59/122

CPC classification number: H10K50/844 ,  H10K59/131 ,  H10K71/00 ,  H10K59/1201 ,  H10K59/122

Abstract: Provided are a display substrate, a display device, and a method for manufacturing the display substrate. The display substrate includes: a first inorganic encapsulation layer covering pixels of an island region and covering a signal line of a bridge region, a first organic encapsulation layer covering the first inorganic encapsulation layer, and multiple insulating layers located in the bridge region and between the first inorganic encapsulation layer and a substrate.

公开(公告)号：US11974493B2

公开(公告)日：2024-04-30

申请号：US17281420

申请日：2020-06-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei Tian ,  Yanan Niu ,  Dong Li ,  Ming Liu ,  Zheng Liu

IPC: H10K77/10 ,  G09F9/30 ,  H10K59/131 ,  H10K102/00

CPC classification number: H10K77/111 ,  G09F9/301 ,  H10K59/131 ,  H10K2102/311

Abstract: A flexible substrate has at least one bendable region. The flexible substrate includes a flexible base, a first electrode layer disposed on the base, a first insulating layer disposed on a side of the first electrode layer away from the base, and a second electrode layer disposed on a side of the first insulating layer away from the base. The first electrode layer includes at least one first detection electrode, and the second electrode layer includes at least one second detection electrode. An orthogonal projection of a first detection electrode on the base overlaps at least partially with an orthogonal projection of a second detection electrode on the base. A region where orthogonal projections of the first detection electrode and the second detection electrode on the base are located overlaps with a bendable region.

公开(公告)号：US20240090267A1

公开(公告)日：2024-03-14

申请号：US18512114

申请日：2023-11-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Wang ,  Hongwei Tian ,  Ming Liu ,  Jia Zhao ,  Qiuhua Meng ,  Ziang Han

IPC: H10K59/121 ,  H10K59/122 ,  H10K59/124 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K59/122 ,  H10K59/124 ,  H10K71/00 ,  H01L21/02565

Abstract: The present disclosure provides a displaying backplane and a displaying device, and relates to the technical field of displaying. The displaying backplane includes: a substrate base plate; a first active layer and a second active layer that are provided on the substrate base plate, wherein the material of the first active layer and the second active layer is an oxide semiconductor, the first active layer has a first channel region and first no-channel regions, and the second active layer has a second channel region and second no-channel regions; a first grid insulating layer covering the first active layer and the second active layer; and a first grid and a second grid that are provided on the first grid insulating layer; wherein the oxygen-vacancy concentration of the first channel region is greater than the oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region.

公开(公告)号：US11670106B2

公开(公告)日：2023-06-06

申请号：US17504372

申请日：2021-10-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Wang ,  Ming Liu ,  Zheng Liu ,  Hongwei Tian ,  Yibing Fan ,  Jia Zhao

IPC: G09G3/3208 ,  G06V40/13

CPC classification number: G06V40/1318 ,  G09G3/3208 ,  H10K50/813 ,  H10K50/822 ,  H10K59/122 ,  H10K59/40 ,  H10K71/00

Abstract: An optical fingerprint sensor is provided. The optical fingerprint sensor includes a backplate structure layer, a pixel defining layer, and an organic photoelectric sensing layer, wherein the pixel defining layer is disposed on a side of the backplate structure layer; and a non-pixel region of the pixel defining layer is provided with a first non-pixel hole, and the organic photoelectric sensing layer is disposed in the first non-pixel hole.

公开(公告)号：US20220254852A1

公开(公告)日：2022-08-11

申请号：US17485764

申请日：2021-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Wang ,  Hongwei Tian ,  Ming Liu ,  Jia Zhao ,  Qiuhua Meng ,  Ziang Han

IPC: H01L27/32 ,  H01L51/56

Abstract: The present disclosure provides a method for fabricating a displaying backplane, a displaying backplane and a displaying device, and relates to the technical field of displaying. The method includes forming a first active layer and a second active layer on a substrate base plate; forming a first grid insulating layer covering the first active layer and the second active layer; forming a first grid on the first grid insulating layer; performing ion implantation to the first no-channel regions, the second no-channel regions and the second channel region, to reduce oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region; and forming a second grid on the first grid insulating layer.