Abstract:
A method for forming a mask pattern is provided, comprising forming a negative photoresist on a substrate; in an environment without oxygen, to performing a first exposure on the negative photoresist by use of a first ordinary mask plate, so that a fully-cured portion of the negative photoresist is exposed to light and a semi-cured portion and a removed portion of the negative photoresist are not exposed to light; in an environment with oxygen, performing a second exposure on the negative photoresist by use of a second ordinary mask plate, so that the semi-cured portion of the negative photoresist is exposed to light and the removed portion of the negative photoresist not exposed to light; removing the uncured negative photoresist and forming the mask pattern.
Abstract:
A friction electric generator and a manufacturing method thereof are provided. The friction electric generator includes a first substrate and a second substrate disposed oppositely, a first electrode and a polymer insulating layer sequentially formed on a side of the first substrate facing the second substrate; a second electrode formed on a side of the second substrate facing the first substrate; wherein, the first electrode and the second electrode are each made of a flexible conductive substance, the first substrate and the second substrate are each made of a flexible insulating substance, and the polymer insulating layer and the second electrode is capable of generating electricity by friction.
Abstract:
The present disclosure provides a method of fabricating a graphene touch sensor, a graphene sensor and a touch-sensitive display device. The method comprises: forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; striping off the remainder photoresist. The embodiment of the present disclosure avoids the alkaline developing solution and the alkaline stripping solution from contacting the graphene film to degrade the conduction of the graphene, thereby increasing yield and reducing cost.
Abstract:
The present invention provides a method and an apparatus for forming an oriented nanowire material as well as a method for forming a conductive structure, which can be used to solve the problem of imperfect process for forming oriented nanowire material in prior art. The method for forming an oriented nanowire material of the present invention comprises: forming a liquid film in a closed frame by a dispersion containing nanowires; expanding the closed frame in a first direction so that the liquid film expands in the first direction along with the closed frame; contracting the closed frame in the first direction so that the liquid film contracts in the first direction along with the closed frame; transferring the contracted liquid film to a substrate; and curing the liquid film to form an oriented nanowire material on the substrate.
Abstract:
A low temperature polysilicon film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof and a display panel are provided. The manufacturing method of the low temperature polysilicon film includes crystallizing a nano-silicon thin film to form the low temperature polysilicon film.
Abstract:
A low temperature polysilicon film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof and a display panel are provided. The manufacturing method of the low temperature polysilicon film includes crystallizing a nano-silicon thin film to form the low temperature polysilicon film.
Abstract:
An embodiment of this disclosure provides a nano-imprinting method, including: applying an imprinting adhesive on a to-be-processed layer of a substrate located in an imprinting chamber; charging the imprinting chamber with a preset gas at a temperature higher than a boiling point of the preset gas, and pressing a nano-imprinting template on the imprinting adhesive; reducing an ambient temperature of the imprinting chamber to a temperature lower than the boiling point of the preset gas and maintaining the temperature for a preset time, such that the preset gas becomes a liquid; irradiating ultraviolet light from a side of the nano-imprinting template away from the imprinting adhesive to cure the imprinting adhesive; raising the ambient temperature of the imprinting chamber to be higher than the boiling point of the preset gas, such that the liquefied preset gas turns back into a gas; and demolding the nano-imprinting template from the imprinting adhesive.
Abstract:
Embodiments of the present disclosure provide a MEMS light valve, which includes: a fixed grating partitioned into first regions and second regions, which are arranged alternately, wherein the fixed grating comprises reflective units configured within the first regions for reflecting at least part of incident light and the second regions do not reflect light; and a movable grating located at a side of the fixed grating to which outside light is incident and movable in a plane where the movable grating is located, wherein the movable grating is capable of block part or all of the reflective units during moving. The embodiments of the present disclosure are adopted to manufacture of a MEMS light valve and a display device including the MEMS light valve.
Abstract:
A touch panel and a method for fabricating the same are disclosed. The method for fabricating the touch panel forms a pattern of a protruding structure on a base substrate by using a negative photoresist material, and the pattern of the protruding structure formed thereon is a pattern having a cross section which gradually increases from the base substrate to the outside surface and is similar to an inverted trapezoidal. Thereafter patterns of a touch electrode and dummy electrode insulated from each other are formed by using the pattern of the formed protruding structure as a mask. As the pattern of the touch electrode and the dummy electrode are disconnected through level difference of the protruding structure, the patterns of the touch electrode and the dummy electrode overlay the whole base substrate from the top view, allowing the whole surface of the touch panel to have the same optical property.
Abstract:
A method for forming a mask pattern is provided, comprising forming a negative photoresist on a substrate; in an environment without oxygen, to performing a first exposure on the negative photoresist by use of a first ordinary mask plate, so that a fully-cured portion of the negative photoresist is exposed to light and a semi-cured portion and a removed portion of the negative photoresist are not exposed to light; in an environment with oxygen, performing a second exposure on the negative photoresist by use of a second ordinary mask plate, so that the semi-cured portion of the negative photoresist is exposed to light and the removed portion of the negative photoresist not exposed to light; removing the uncured negative photoresist and forming the mask pattern.