公开(公告)号：US4543489A

公开(公告)日：1985-09-24

申请号：US706254

申请日：1985-02-28

申请人： Nozomu Harada ,  Yukio Endo ,  Okio Yoshida ,  Yoshiyuki Matsunaga

发明人： Nozomu Harada ,  Yukio Endo ,  Okio Yoshida ,  Yoshiyuki Matsunaga

IPC分类号： H01L27/146 ,  H04N3/15 ,  H04N9/04 ,  H01J40/14

CPC分类号： H01L27/14667 ,  H01L27/14665 ,  H04N3/15 ,  H04N9/045

摘要： A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.

摘要翻译： 一种具有多个单元的固态图像传感器，包括形成在半导体基板上的用于光电转换入射光线以产生信号电荷的光电转换膜，用于存储形成在所述基板中的所述信号电荷的信号电荷存储区域，信号电荷读出区域 用于从所述存储区域读出所述信号电荷，用于使所述光电转换膜与所述信号电荷存储区域电接触的导体电极将所述信号电荷从所述光电转换膜引导到所述存储区域，并且所述导体电极串联布置 所述导体电极的矩阵中的至少两条或更多条行线沿着列方向从行方向显示为一个电极的长度的1/2。

公开(公告)号：US20130021509A1

公开(公告)日：2013-01-24

申请号：US13592792

申请日：2012-08-23

申请人： Makoto INAGAKI ,  Yoshiyuki MATSUNAGA

发明人： Makoto INAGAKI ,  Yoshiyuki MATSUNAGA

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H04N5/3577 ,  H04N5/374

摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.

公开(公告)号：US08319875B2

公开(公告)日：2012-11-27

申请号：US13007033

申请日：2011-01-14

申请人： Masayuki Masuyama ,  Masashi Murakami ,  Yoshiyuki Matsunaga

发明人： Masayuki Masuyama ,  Masashi Murakami ,  Yoshiyuki Matsunaga

IPC分类号： H04N5/335

CPC分类号： H04N5/3598 ,  H04N5/2351

摘要： An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.

摘要翻译： 一种成像装置根据入射光的量输出亮度信息，并且包括：成像单元，其包括一维或二维布置的多个单位单元，每个单元包括光电转换部分，该光电转换部分生成第一输出电压 复位状态和第二输出电压，并且每个单元电池产生对应于第一输出电压的复位电压和对应于第二输出电压的读取电压; 以及输出单元，其可操作以相对于每个单位单元输出指示当正常光入射到所述成像装置并且所述读取电压处于预定范围时所述复位电压和所述读取电压之间的差的亮度信息，以及亮度信息 当强光入射到成像装置并且读取电压不在预定范围内时指示高亮度。

公开(公告)号：US08218289B2

公开(公告)日：2012-07-10

申请号：US12694477

申请日：2010-01-27

申请人： Isao Abe ,  Kenichi Asami ,  Hajime Osaki ,  Yoshiyuki Matsunaga ,  Hideo Kozuka

发明人： Isao Abe ,  Kenichi Asami ,  Hajime Osaki ,  Yoshiyuki Matsunaga ,  Hideo Kozuka

IPC分类号： H01G9/08

CPC分类号： H01G9/12 ,  H01G9/08

摘要： An electrolytic capacitor includes: a case including a case body, in which an electrolytic capacitor element is disposed in a sealed manner and filled up with an electrolytic solution, and a safety valve is mounted to the case body for jetting an evaporated gas of the electrolytic solution filling the electrolytic capacitor element; a cover member mounted to the case so as to cover the safety valve provided for the case; a first fixing unit mounted to the cover member so as to prevent the cover member from dismounting when the evaporated gas of the electrolytic solution is jetted outward; and a second fixing unit disposed in association with the first fixing unit and adopted to reinforce and assist a function of the first fixing unit to thereby prevent the cover member from being dismounted. An electric equipment includes a lighting circuit including circuit components, and an electrolytic capacitor of the structure mentioned above.

摘要翻译： 一种电解电容器包括：壳体，其具有电解电容器元件，其密封地设置有电解液，并且安装在壳体上，用于喷射电解液的蒸发气体 溶液填充电解电容元件; 安装到所述壳体以覆盖为所述壳体提供的安全阀的盖构件; 第一固定单元，安装到所述盖构件，以便当所述电解液的蒸发气体向外喷射时防止所述盖构件的拆卸; 以及与第一固定单元相关联地设置的第二固定单元，并且用于加强和辅助第一固定单元的功能，从而防止盖构件的拆卸。 电气设备包括具有电路部件的点灯电路和上述结构的电解电容器。

公开(公告)号：US08149308B2

公开(公告)日：2012-04-03

申请号：US11721241

申请日：2005-12-21

申请人： Masayuki Masuyama ,  Yoshiyuki Matsunaga

发明人： Masayuki Masuyama ,  Yoshiyuki Matsunaga

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14806 ,  H04N5/35581 ,  H04N5/374

摘要： A high dynamic range solid-state image pickup device is provided with a plurality of unit cells, which convert light into signal charges and accumulate the signal charges. The unit cells are arranged by rows and columns for outputting a signal voltage corresponding to the signal charges. A selector and a read transistor set an accumulation time period for accumulating the signal charges in the unit cells to a first period and a second period different from each other. The row selector and a vertical selection transistor select a row. Sampling capacitors (210a, 210b) are connected to the unit cell of each column. A pulse generator and sampling transistors select an arbitrary sampling capacitor from the sampling capacitors. The pulse generator and the sampling transistors perform selection so as to accumulate the signal voltage corresponding to the signal charges accumulated during the first period and the second period in the sampling capacitors, respectively.

摘要翻译： 高动态范围固态图像拾取装置具有多个单元，其将光转换为信号电荷并累积信号电荷。 单位单元由行和列排列，用于输出对应于信号电荷的信号电压。 选择器和读取晶体管设置用于将单位单元中的信号电荷累加到彼此不同的第一周期和第二周期的累积时间周期。 行选择器和垂直选择晶体管选择一行。 采样电容器（210a，210b）连接到每列的单元电池。 脉冲发生器和采样晶体管从采样电容器中选择任意采样电容。 脉冲发生器和采样晶体管分别进行选择，以分别累积与在采样电容器中的第一周期和第二周期期间累积的信号电荷相对应的信号电压。

公开(公告)号：US20110272751A1

公开(公告)日：2011-11-10

申请号：US13185199

申请日：2011-07-18

申请人： Makoto INAGAKI ,  Yoshiyuki Matsunaga

发明人： Makoto INAGAKI ,  Yoshiyuki Matsunaga

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14636 ,  H04N5/341 ,  H04N5/3575 ,  H04N5/3741

摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.

摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。

公开(公告)号：US20100328485A1

公开(公告)日：2010-12-30

申请号：US12880551

申请日：2010-09-13

申请人： Kunihiro IMAMURA ,  Toshiya FUJII ,  Yoshiyuki MATSUNAGA

发明人： Kunihiro IMAMURA ,  Toshiya FUJII ,  Yoshiyuki MATSUNAGA

IPC分类号： H04N5/228 ,  H04N5/335

CPC分类号： H04N9/045 ,  H04N5/347 ,  H04N2101/00 ,  H04N2209/045

摘要： An imaging device includes a plurality of pixels each configured to convert incident light to an electric charge signal and output the electric charge signal as a pixel signal, and a pixel binning unit configured to bin pixel signals from pixels adjacent to each other and output the binned pixel signal. The pixel binning unit performs first pixel binning operation of binning pixel signals from pixels on the same column and second pixel binning operation of binning pixels on the same row.

摘要翻译： 成像装置包括多个像素，每个像素被配置为将入射光转换为电荷信号并输出​​电荷信号作为像素信号，以及像素合并单元，被配置为将来自彼此相邻的像素的像素信号相加并输出 像素信号。 像素分档单元执行从同一列上的像素和同一行上的合并像素的第二像素合并操作中合并像素信号的第一像素合并操作。

公开(公告)号：US07688373B2

公开(公告)日：2010-03-30

申请号：US11529256

申请日：2006-09-29

申请人： Makoto Inagaki ,  Yoshiyuki Matsunaga

发明人： Makoto Inagaki ,  Yoshiyuki Matsunaga

IPC分类号： H04N5/335 ,  H04N3/14 ,  H01L31/112

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14636 ,  H04N5/341 ,  H04N5/3575 ,  H04N5/3741

摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.

摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。

公开(公告)号：US07626622B2

公开(公告)日：2009-12-01

申请号：US10584883

申请日：2005-01-11

申请人： Shigetaka Kasuga ,  Takumi Yamaguchi ,  Takahiko Murata ,  Yoshiyuki Matsunaga ,  Ryohei Miyagawa ,  Atsushi Ueta

发明人： Shigetaka Kasuga ,  Takumi Yamaguchi ,  Takahiko Murata ,  Yoshiyuki Matsunaga ,  Ryohei Miyagawa ,  Atsushi Ueta

IPC分类号： H04N5/335

CPC分类号： H04N5/357 ,  H04N5/378

摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

公开(公告)号：US07545424B2

公开(公告)日：2009-06-09

申请号：US11035201

申请日：2005-01-14

申请人： Masashi Murakami ,  Yoshiyuki Matsunaga ,  Masayuki Masuyama

发明人： Masashi Murakami ,  Yoshiyuki Matsunaga ,  Masayuki Masuyama

IPC分类号： H04N5/335

CPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/3742

摘要： An object of the present invention is to provide a shift register in which it is prevented from malfunctioning because of a portion between a first transistor and a second transistor being in a high-impedance state. The shift register of the present invention includes capacitor means 5 for storing data outputted from a unit circuit 1 of the preceding block. A first transistor 3 is turned ON only when data is being stored in the capacitor means 5. A second transistor 7 includes a control electrode and an input-side diffusion layer connected to the output-side diffusion layer of the first transistor 3, and is turned ON only when a pulse of a clock signal from the first transistor 3 is inputted to the control electrode and the input-side diffusion layer. Potential controlling means 2 keeps the second transistor 7 OFF at least during a period in which the second transistor 7 is supposed to be OFF.

摘要翻译： 本发明的目的是提供一种移位寄存器，其中由于第一晶体管和第二晶体管之间的部分处于高阻抗状态而防止其发生故障。 本发明的移位寄存器包括用于存储从前一块的单元电路1输出的数据的电容器装置5。 第一晶体管3仅当数据被存储在电容器装置5中时才导通。第二晶体管7包括连接到第一晶体管3的输出侧扩散层的控制电极和输入侧扩散层，并且是 仅当来自第一晶体管3的时钟信号的脉冲被输入到控制电极和输入侧扩散层时才导通。 电位控制装置2至少在第二晶体管7应该是断开的时段期间使第二晶体管7截止。