公开(公告)号：US07696546B2

公开(公告)日：2010-04-13

申请号：US12015930

申请日：2008-01-17

Applicant: Tatsuya Hirata ,  Shouzi Tanaka ,  Ryohei Miyagawa

Inventor： Tatsuya Hirata ,  Shouzi Tanaka ,  Ryohei Miyagawa

IPC: H01L31/062

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643

Abstract: A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.

Abstract translation: 硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。 分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极 图像像素。 另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

公开(公告)号：US07485939B2

公开(公告)日：2009-02-03

申请号：US11435098

申请日：2006-05-17

Applicant: Shouzi Tanaka ,  Ryohei Miyagawa

Inventor： Shouzi Tanaka ,  Ryohei Miyagawa

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

Abstract: An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.

Abstract translation: 在（a）沿着沟槽表面形成的用于隔离像素调用的缺陷控制层和（b）光电二极管之间的边界部分中形成反转层。 缺陷控制层为P型，光电二极管和反型层为N型。 这里，反转层中的杂质浓度至少是光电二极管中杂质浓度的两倍。

公开(公告)号：US20090026563A1

公开(公告)日：2009-01-29

申请号：US12172548

申请日：2008-07-14

Applicant: Motonari KATSUNO ,  Ryohei MIYAGAWA ,  Hirohisa OHTSUKI

Inventor： Motonari KATSUNO ,  Ryohei MIYAGAWA ,  Hirohisa OHTSUKI

IPC: H01L31/00

CPC classification number: H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643

Abstract: A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.

Abstract translation: 固态成像装置包括第一布线层，第二布线层，基板接触和第一接触。 衬底接触相对于形成周边像素的光接收部分的布置相对于形成中心像素的光接收部分从衬底接触件的布置偏移或不偏移移位量r 从周边部朝向中央部。 第一接触件相对于周边像素的光接收部分的布置从第一接触件相对于中心像素的光接收部分的布置移位到从周边部分朝向 中央部分。 移位量s1大于移动量r。

公开(公告)号：US20080079106A1

公开(公告)日：2008-04-03

申请号：US11865271

申请日：2007-10-01

Applicant: Ryohei MIYAGAWA ,  Shuichi MAYUMI

Inventor： Ryohei MIYAGAWA ,  Shuichi MAYUMI

IPC: H01L31/0216

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/0216

Abstract: A solid-state imaging device according to the present invention includes a semiconductor substrate; a light-receiving element formed in the semiconductor substrate and photoelectrically converting incident light; and a plurality of wiring layers stacked on top of each other on a surface of the semiconductor substrate where the light-receiving element is formed. At least one of the plurality of wiring layers includes: a first insulating layer; metal wiring formed on the first insulating layer; an antireflection layer stacked on the first insulating layer and the metal wiring, preventing diffusion of a material making up of the metal wiring, and preventing reflection of the incident light; and a second insulating layer stacked on the antireflection layer.

Abstract translation: 根据本发明的固态成像装置包括半导体衬底; 形成在所述半导体衬底中的光接收元件并对入射光进行光电转换; 以及在形成有光接收元件的半导体基板的表面上彼此叠置的多个布线层。 所述多个布线层中的至少一个包括：第一绝缘层; 形成在第一绝缘层上的金属布线; 叠层在第一绝缘层和金属布线上的防反射层，防止由金属布线组成的材料的扩散，并防止入射光的反射; 以及层叠在所述抗反射层上的第二绝缘层。

公开(公告)号：US20070109432A1

公开(公告)日：2007-05-17

申请号：US11528523

申请日：2006-09-28

Applicant: Takumi Yamaguchi ,  Takahiko Murata ,  Shigetaka Kasuga ,  Takayoshi Yamada ,  Yoshiyuki Matsunaga ,  Ryohei Miyagawa

Inventor： Takumi Yamaguchi ,  Takahiko Murata ,  Shigetaka Kasuga ,  Takayoshi Yamada ,  Yoshiyuki Matsunaga ,  Ryohei Miyagawa

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/3741 ,  H04N5/3742

Abstract: A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.

Abstract translation: 固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号 根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。 存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

公开(公告)号：US4895107A

公开(公告)日：1990-01-23

申请号：US215175

申请日：1988-07-05

Applicant: Kensaku Yano ,  Akihiko Furukawa ,  Ryohei Miyagawa ,  Yoshinori Iida

Inventor： Kensaku Yano ,  Akihiko Furukawa ,  Ryohei Miyagawa ,  Yoshinori Iida

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/48 ,  C23C16/54 ,  H01L21/263 ,  H01L21/31

CPC classification number: C23C16/4409 ,  C23C16/482 ,  C23C16/488 ,  C23C16/54

Abstract: A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.

Abstract translation: 光化学反应装置包括使用分隔板分隔成反应室的真空容器和载体室。 隔板具有开口，承载托盘可以可拆卸地插入该开口中，以使得反作用气室被密封。 托盘具有与透光窗相对的基板保持架。 反应气体在该窗口和待加工的基板之间流动，安装在基板保持器上。

公开(公告)号：US08723239B2

公开(公告)日：2014-05-13

申请号：US12172571

申请日：2008-07-14

Applicant: Hiroyuki Doi ,  Ryohei Miyagawa ,  Hitoshi Kuriyama

Inventor： Hiroyuki Doi ,  Ryohei Miyagawa ,  Hitoshi Kuriyama

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14689

Abstract: A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.

Abstract translation: 固态成像元件包括形成在半导体衬底的上部以进行光电转换的光电二极管，形成在衬底上以覆盖光电二极管的二氧化硅膜和形成在二氧化硅膜上的氮化硅膜。 氮化硅膜的厚度比氮化硅膜的至少一端部分薄，部分地比光电二极管的薄。

公开(公告)号：US20110080508A1

公开(公告)日：2011-04-07

申请号：US12948223

申请日：2010-11-17

Applicant: Motonari KATSUNO ,  Ryohei MIYAGAWA

Inventor： Motonari KATSUNO ,  Ryohei MIYAGAWA

IPC: H04N5/335

CPC classification number: H04N5/335

Abstract: In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance AH (AV) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance BH (BV) between neighboring vertexes of the disposition region.

Abstract translation: 在固态图像拾取装置中，难以将与像素阵列区域的图像高度相对应的最佳入射角与相机透镜的光入射特性相匹配，从而导致由于灵敏度阴影引起的图像质量劣化。 各个微透镜以二维方式设置，即以行和列方向布置。 特别地，微透镜被布置成使得布置微透镜的布置区域的每一侧相对于连接配置区域的相邻顶点的线具有凹曲线。 换句话说，配置区域的一对相对侧的中心点之间的距离AH（AV）被设定为小于配置区域的相邻顶点之间的距离BH（BV）。

公开(公告)号：US07863661B2

公开(公告)日：2011-01-04

申请号：US12054038

申请日：2008-03-24

Applicant: Motonari Katsuno ,  Ryohei Miyagawa ,  Hirohisa Ohtsuki

Inventor： Motonari Katsuno ,  Ryohei Miyagawa ,  Hirohisa Ohtsuki

IPC: H01L29/72

CPC classification number: H01L27/14603 ,  H01L27/14609

Abstract: Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.

Abstract translation: 提供了一种包括单位像素的固态成像装置，其中单位像素包括形成在半导体衬底上的公共阱上的包括第一单位像素和第二单位像素的两种单位像素。 第一单位像素包括：将光转换成信号电荷的至少一个光电转换区域; 所述第一半导体区域形成在所述共同阱上并且具有与所述公用阱的导电类型相同的导电类型; 并且所述第一触点电连接到所述第一半导体区域。 第二单位像素包括：至少一个光电转换区域; 所述第二半导体区域形成在所述公井上，并且具有与所述公共井的导电类型相反的导电类型; 并且所述第二触点电连接到所述第二半导体区域。

公开(公告)号：US20090278181A1

公开(公告)日：2009-11-12

申请号：US12434474

申请日：2009-05-01

Applicant: Shouzi TANAKA ,  Ryohei Miyagawa

Inventor： Shouzi TANAKA ,  Ryohei Miyagawa

IPC: H01L31/112 ,  H01L21/265

CPC classification number: H01L27/14603 ,  H01L21/26586 ,  H01L27/1463 ,  H01L27/14689

Abstract: A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.

Abstract translation: 固态图像传感器包括：沟槽隔离区域; 用于将入射光转换为信号电荷并在其中累积信号电荷的光电二极管区域; 用于累积光电二极管区域的信号电荷的浮动扩散区域; 栅电极，形成在位于光电二极管区域和浮动扩散区域之间的元件形成区域上，并且形成为使得栅电极的两端分别与光电二极管区域的一部分和浮动扩散区域的一部分重叠; 以及形成在位于沟槽隔离区域的底部和侧壁部分中的区域中的非活性层。 在非活性层中位于栅电极下方的区域中的杂质浓度低于非活性层中位于栅电极下方的区域以外的区域中的杂质浓度。