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公开(公告)号：US20110272751A1
公开(公告)日：2011-11-10
申请号：US13185199
申请日：2011-07-18
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US07688373B2
公开(公告)日：2010-03-30
申请号：US11529256
申请日：2006-09-29
IPC分类号： H04N5/335 , H04N3/14 , H01L31/112
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US07352399B2
公开(公告)日：2008-04-01
申请号：US10532992
申请日：2004-02-26
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于向复位晶体管（5）施加低电平时获得的沟道电位，或者当向传输门（2）施加低电平时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US08253833B2
公开(公告)日：2012-08-28
申请号：US12536814
申请日：2009-08-06
IPC分类号： H04N3/14
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于当向复位晶体管（5）施加低电平时获得的沟道电位，或者当低电平施加到传输门（2）时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US08004026B2
公开(公告)日：2011-08-23
申请号：US12720549
申请日：2010-03-09
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
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公开(公告)号：US07944493B2
公开(公告)日：2011-05-17
申请号：US12715884
申请日：2010-03-02
IPC分类号： H04N3/14 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US07859032B2
公开(公告)日：2010-12-28
申请号：US11883556
申请日：2005-07-21
IPC分类号： H01L31/062 , H01L31/113 , H01L27/148
CPC分类号： H04N5/374 , H01L27/14609 , H01L27/1463 , H01L27/14634 , H04N5/3597 , H04N5/363
摘要： During an exposure time period (long accumulation time period) of a low shutter speed shooting mode, a second reference voltage Vss2, which is different from a first reference voltage Vss1 (a ground voltage) corresponding to a reference voltage of a peripheral circuit, is applied to a well (5) where a photoelectric converter section (2) and a drain region (4) are formed, whereby generation of dark electrons at a portion of a surface of the well (5) below a gate electrode (6) is suppressed. A polarity of the second reference voltage Vss2 is positive in the case where a conductivity type of the well (5) is a P-type, and is negative in the case of an N-type.
摘要翻译： 在低快门速度拍摄模式的曝光时间段（长时间累积时间段）期间，不同于与外围电路参考电压相对应的第一参考电压Vss1（接地电压）的第二参考电压Vss2是 施加到其上形成光电转换器部分（2）和漏极区域（4）的阱（5），由此在栅电极（6）下面的阱（5）的表面的一部分处产生暗电子是 被压制 在阱（5）的导电类型为P型的情况下，第二参考电压Vss2的极性为正，在N型的情况下为负。
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公开(公告)号：US20070184570A1
公开(公告)日：2007-08-09
申请号：US11726437
申请日：2007-03-22
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US07928485B2
公开(公告)日：2011-04-19
申请号：US12290076
申请日：2008-10-27
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US20100157123A1
公开(公告)日：2010-06-24
申请号：US12715884
申请日：2010-03-02
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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