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公开(公告)号：US20070184570A1
公开(公告)日：2007-08-09
申请号：US11726437
申请日：2007-03-22
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US07928485B2
公开(公告)日：2011-04-19
申请号：US12290076
申请日：2008-10-27
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US20090072125A1
公开(公告)日：2009-03-19
申请号：US12290076
申请日：2008-10-27
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US07459335B2
公开(公告)日：2008-12-02
申请号：US11726437
申请日：2007-03-22
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US07214976B2
公开(公告)日：2007-05-08
申请号：US10809215
申请日：2004-03-25
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US07060960B2
公开(公告)日：2006-06-13
申请号：US10727676
申请日：2003-12-04
申请人： Sougo Ohta , Mikiya Uchida , Yoshiyuki Matsunaga
发明人： Sougo Ohta , Mikiya Uchida , Yoshiyuki Matsunaga
CPC分类号： H01L21/76237 , G01J1/44 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device that achieves a reduction in variations appearing on a reproducing screen is provided. The solid-state imaging device includes a plurality of pixel cells that are laid out in matrix form on a semiconductor substrate and a driving unit that is provided to drive the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a MOS transistor, and an element isolating portion 2 that is formed so that the photodiode and the MOS transistor are isolated from each other. The element isolating portion 2 is formed of a STI (Shallow Trench Isolation) that is a grooved portion of the semiconductor substrate. In the semiconductor substrate 7, a STI leakage stopper 1 in which an impurity of a conductive type opposite to a conductive type of source/drain regions in the MOS transistor is introduced is formed to enclose side walls and a bottom face of the element isolating portion 2.
摘要翻译： 提供了实现再现画面上出现的变化减少的固态成像装置。 固态成像装置包括以矩阵形式布置在半导体衬底上的多个像素单元和设置成驱动多个像素单元的驱动单元。 多个像素单元中的每一个包括光电二极管，MOS晶体管和形成为使得光电二极管和MOS晶体管彼此隔离的元件隔离部分2。 元件隔离部分2由作为半导体衬底的沟槽部分的STI（浅沟槽隔离）形成。 在半导体基板7中，形成有与MOS晶体管中的导电型的源极/漏极区域相反的导电类型的杂质导入的STI泄漏挡块1，以封闭侧壁和元件隔离部分的底面 2。
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公开(公告)号：US07755150B2
公开(公告)日：2010-07-13
申请号：US11808042
申请日：2007-06-06
申请人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
发明人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： An N-type epitaxial layer 115, which is formed above an N-type semiconductor substrate 114 in each of a pixel region and a peripheral circuit region; a first P-type well 1 formed above the N-type epitaxial layer 115 in the pixel region; and light receiving regions 117, which are formed within the first P-type well 1 and each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells 2, which are formed from a surface 200 of the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type well 3 which is formed from the surface 200 of the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type well 4 which is formed so as to have such a shape as to isolate the N-type well 3 from the N-type epitaxial layer 115 and which has a higher impurity concentration than that of the first P-type well 1.
摘要翻译： 在像素区域和外围电路区域中的每一个中形成在N型半导体衬底114上方的N型外延层115; 形成在像素区域中的N型外延层115的上方的第一P型阱1; 并且包括形成在第一P型阱1内并且其每一个都是光电二极管的分量的光接收区域117。 外围电路区域包括：第二P型阱2，其由外围电路区域的表面200形成为期望的深度，并且每个都是N沟道MOS晶体管的一部分; N型阱3，其由外围电路区域的表面200形成为期望的深度，并且是P沟道MOS晶体管的分量; 以及第三P型阱4，其形成为具有使N型阱3与N型外延层115隔离的杂质浓度比第一P型阱高的杂质浓度 好1。
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公开(公告)号：US07563635B2
公开(公告)日：2009-07-21
申请号：US11838937
申请日：2007-08-15
IPC分类号： H01L21/00
摘要： In the present invention, an etching hole 21 is formed in a polysilicon film 14 as a cavity-wall member. Through the etching hole 21, hydrofluoric acid is injected, so as to dissolve a silicon oxide film 13, thereby forming a cavity 22. In the cavity 22, a detecting unit 12 of a sensor is in an exposed condition. Next, by sputtering, an Al film 16 is deposited in the etching hole 21 and on an upper face of a substrate. Thereafter, a portion of the Al film 16 positioned on the polysilicon film 14 is removed by etching back, thereby leaving only a metal closure 16a of Al which closes the etching hole. The sputtering step is performed under a pressure of 5 Pa or less, so that the pressure in the cavity can be held to be low.
摘要翻译： 在本发明中，在作为空腔壁构件的多晶硅膜14中形成蚀刻孔21。 通过蚀刻孔21注入氢氟酸以溶解氧化硅膜13，从而形成空腔22.在空腔22中，传感器的检测单元12处于暴露状态。 接下来，通过溅射，在蚀刻孔21中和基板的上表面上沉积Al膜16。 此后，通过蚀刻去除位于多晶硅膜14上的Al膜16的一部分，从而仅留下关闭蚀刻孔的Al的金属封闭件16a。 在5Pa以下的压力下进行溅射工序，能够将空腔内的压力保持为低。
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公开(公告)号：US20070284679A1
公开(公告)日：2007-12-13
申请号：US11808042
申请日：2007-06-06
申请人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
发明人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L29/82
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： An N-type epitaxial layer 115, which is formed above an N-type semiconductor substrate 114 in each of a pixel region and a peripheral circuit region; a first P-type well 1 formed above the N-type epitaxial layer 115 in the pixel region; and light receiving regions 117, which are formed within the first P-type well land each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells 2, which are formed from a surface 200 of the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type well 3 which is formed from the surface 200 of the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type well 4 which is formed so as to have such a shape as to isolate the N-type well 3 from the N-type epitaxial layer 115 and which has a higher impurity concentration than that of the first P-type well 1.
摘要翻译： 在像素区域和外围电路区域中的每一个中形成在N型半导体衬底114上方的N型外延层115; 形成在像素区域中的N型外延层115的上方的第一P型阱1; 并且包括形成在其中是光电二极管的一部分的第一P型阱区内的光接收区域117。 外围电路区域包括：第二P型阱2，其由外围电路区域的表面200形成为期望的深度，并且每个都是N沟道MOS晶体管的一部分; N型阱3，其由外围电路区域的表面200形成为期望的深度，并且是P沟道MOS晶体管的分量; 以及第三P型阱4，其形成为具有使N型阱3与N型外延层115隔离的杂质浓度比第一P型阱高的杂质浓度 好1。
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公开(公告)号：US20060128052A1
公开(公告)日：2006-06-15
申请号：US11351526
申请日：2006-02-10
申请人： Ken Mimuro , Mikiya Uchida , Mototaka Ochi
发明人： Ken Mimuro , Mikiya Uchida , Mototaka Ochi
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/1463
摘要： A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of the gate electrode; an element-isolating portion having a STI structure, and a gate oxide film having a thickness of not more than 10 nm. One edge of the gate electrode overlaps the photodiode region. First, second and third regions are formed on a surface portion extending from the photodiode region to the drain region, in conditions such that the first region is disposed with a predetermined distance from one edge of the gate electrode and has a P-type first concentration C1, the second region is disposed with one edge positioned adjacent to the first region and the other edge overlapping the gate electrode and has a P-type second concentration C2, and the third region is disposed with one edge positioned adjacent to the second region and the other edge positioned adjacent to the drain region and has a P-type third concentration C3, wherein C1>C2>C3 or C1≈C2>C3. The readout characteristic at a low voltage is satisfactory, and image defects such as white flaws and dark current are suppressed sufficiently.
摘要翻译： 固态成像装置包括：形成在P型阱内的多个N型光电二极管区域; 栅极电极，其一个边缘邻近每个光电二极管区域定位; 邻近栅电极的另一边缘定位的N型漏区; 具有STI结构的元件隔离部分和厚度不大于10nm的栅极氧化膜。 栅电极的一个边缘与光电二极管区域重叠。 首先，在从光电二极管区域延伸到漏极区域的表面部分上形成第二和第三区域，使得第一区域以与栅电极的一个边缘隔开预定距离的方式设置，并具有P型第一浓度 如图1所示，第二区域设置有一个边缘邻近第一区域定位，另一个边缘与栅电极重叠并且具有P型第二浓度C 2，并且第三区域设置成一个边缘邻近第二区域 区域，另一边位于漏区附近，并具有P型第三浓度C 3，其中C 1> C 2> C 3或C 1≈C2> C 3.低电压下的读出特性令人满意 ，并且充分抑制诸如白色缺陷和暗电流的图像缺陷。
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