Abstract:
There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.
Abstract:
A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.
Abstract:
Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
Abstract translation:这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。
Abstract:
A color converting member is capable of suppressing deterioration in a phosphor by a simple manufacturing process. A method of manufacturing a color converting member includes a process of molding a resin material into a shape. In the process, molding the resin material and the phosphor integrally into a shape is performed, after kneading a phosphor that converts one color light to another color light into the resin material.
Abstract:
A light-emitting diode device and backlight apparatus and liquid-crystal display apparatus using light-emitting diode device are provided. A light-emitting diode device has a lens covered around a light-emitting diode chip and a processed portion for adjusting light going from the light-emitting diode chip along the central axis of the lens is provided at the light-emitting diode chip or the lens or being provided right above the lens. The light-emitting diode chip is processed near the central axis by a suitable method such as etching. Alternatively, a diffusion material containing low refractive index material portion or an angle selective film is provided on the lens. A light-emitting diode device is able to adjust a quantity of light emitted from the LED chip along the central axis of the lens so that light can be radiated with a desired angle distribution. A backlight apparatus and a liquid-crystal display apparatus are able to suppress ununiformity of brightness and ununiformity of color by using the above-mentioned light-emitting diode device.
Abstract:
A color conversion sheet realizing suppression of deterioration in a color conversion layer and improvement in light extraction efficiency is provided. The color conversion sheet includes: a color conversion layer converting a part of first color light as incident light to second color light having a wavelength longer than that of the first color light; and a pair of sealing sheets sandwiching the color conversion layer from a light incidence side and a light emitting side and each having an inorganic stack film on a substrate. Reflectance of the sealing sheet on the light incidence side to the second color light is higher than that to the first color light, and reflectance of the sealing sheet on the light emitting side to the first color light is higher than that to the second color light.
Abstract:
An image pickup apparatus includes a light-beam splitting mirror configured to transmit and reflect incident light that has entered the light-beam splitting mirror through a photographing optical system; an image sensor that receives light transmitted through the light-beam splitting mirror; an autofocus detecting unit that receives light reflected by the light-beam splitting mirror; a signal processing unit configured to process an image pickup signal of the image sensor; and a display unit configured to display an image being photographed, on the basis of an image signal obtained at the signal processing unit. In the image pickup apparatus, the light-beam splitting mirror has spectral characteristics including a reflectivity of 25% or more and 35% or less at a wavelength of 400 to 650 nm and a reflectivity of 60% or more at a wavelength of about 700 nm through optimization.
Abstract:
A phosphor sheet having a laminated structure including a first barrier material, a first barrier material, a first color conversion layer, a second color conversion layer, and a second barrier layer and a display unit and an illuminating device including display unit is provided. A diffusion plate and a display unit including a diffusion plate are also provided.
Abstract:
A reflective screen is provided. A reflective screen that displays an image by reflecting light from a light source includes a reflective sheet, a light-scattering sheet, and an adhesive layer bonding the reflective sheet to the light-scattering sheet. The adhesive layer contains a coloring material that absorbs light in a particular wavelength region.
Abstract:
Disclosed is an antireflection film used to be stuck on the surface of a glass panel of a CRT, which can be inexpensively manufactured at a high productivity while satisfying all of requirements regarding its adhesive strength, reflectance characteristic, electric resistance and total light transmittance. The antireflection film is formed by stacking silicon oxide films and indium tin oxide films on a base film in multilevels, wherein the thickness of the uppermost silicon oxide film of the antireflection film is thicker than the indium tin oxide film directly under the uppermost silicon oxide film, and the lowermost silicon oxide film, positioned at the interface with the base film, of the antireflection film is a SiOx film where the value x is in a range of 0.5 to 1.9.