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    MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE
    21.
    发明申请
    MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
    磁记录元件和非易失性存储器件

    公开(公告)号：US20120236633A1

    公开(公告)日：2012-09-20

    申请号：US13228040

    申请日：2011-09-08

    Applicant: Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    IPC: G11C11/15 ,  G11B5/66

    CPC classification number: G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    Abstract: According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

    Abstract translation: 根据一个实施例，磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetic memory and method of fabricating the same
    27.
    发明授权
    Magnetic memory and method of fabricating the same 有权
    磁存储器及其制造方法

    公开(公告)号：US08841139B2

    公开(公告)日：2014-09-23

    申请号：US13623306

    申请日：2012-09-20

    Applicant: Chikayoshi Kamata ,  Minoru Amano ,  Tadaomi Daibou ,  Junichi Ito

    Inventor： Chikayoshi Kamata ,  Minoru Amano ,  Tadaomi Daibou ,  Junichi Ito

    IPC: H01L21/00

    CPC classification number: H01L43/10 ,  H01F10/1933 ,  H01F10/30 ,  H01F10/3286 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    Abstract: A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.

    Abstract translation: 根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

    Magnetoresistive element and magnetic random access memory
    28.
    发明授权
    Magnetoresistive element and magnetic random access memory 有权
    磁阻元件和磁性随机存取存储器

    公开(公告)号：US08750030B2

    公开(公告)日：2014-06-10

    申请号：US13236589

    申请日：2011-09-19

    Applicant: Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    Inventor： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    IPC: G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01L43/10

    Abstract: According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

    Abstract translation: 根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。 电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴 平面，并且在磁化方向上是可变的。 第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。 非磁性层设置在第一和第二磁性层之间。 第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。

    MAGNETIC MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
    29.
    发明申请
    MAGNETIC MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁记忆元件及其制造方法

    公开(公告)号：US20130307099A1

    公开(公告)日：2013-11-21

    申请号：US13729297

    申请日：2012-12-28

    Applicant: Eiji KITAGAWA ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Tadaomi Daibou

    Inventor： Eiji KITAGAWA ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Tadaomi Daibou

    IPC: H01L29/82 ,  H01L29/66

    CPC classification number: H01L29/82 ,  H01L29/66007 ,  H01L43/08 ,  H01L43/12

    Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.

    Abstract translation: 根据一个实施例，磁存储元件包括具有第一表面和与第一表面相对的第二表面的第一磁性层，第二磁性层，设置在第一磁性层的第一表面和 第二磁性层，设置在第一磁性层的第二表面上的层，含有B的层和选自Hf，Al和Mg的至少一种元素，以及设置在第一磁性层的侧壁上的绝缘层 中间层，所述绝缘层含有选自所述层中所含的Hf，Al和Mg中的至少一种元素。

    Magnetoresistive element and magnetic memory
    30.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08547737B2

    公开(公告)日：2013-10-01

    申请号：US13628724

    申请日：2012-09-27

    Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    IPC: G11C11/14

    CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

    Abstract translation: 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

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