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21.
公开(公告)号:US12287914B2
公开(公告)日:2025-04-29
申请号:US18368932
申请日:2023-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaeyung Yeo , Sungoh Kim , Choelmin Park , Chungwan Hong
IPC: G06F3/01
Abstract: A wearable electronic device includes a display, and at least one processor connected to the display, where the at least one processor is configured to obtain a first space necessary for a motion of a user corresponding to a motion of an avatar, the motion of the avatar being performed in a virtual space of virtual reality (VR) content displayed through the display, obtain a second space for safely performing the motion of the user, set a scale value, based on the first space and the second space, and based on obtaining the motion of the user, determine, using the set scale value, a size of the motion of the avatar, the motion of the avatar being performed by the motion of the user.
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公开(公告)号:US12287743B2
公开(公告)日:2025-04-29
申请号:US18215036
申请日:2023-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun Jun Park , Woo-Seok Choi
Abstract: A semiconductor system including a transmitter configured to output a plurality of data as a plurality of data input/output signals through a plurality of channels based on a matrix E, and a receiver configured to generate the plurality of data by differentially amplifying the plurality of data input/output signals received through the plurality of channels based on a matrix D, in which all components of the matrix E and the matrix D are integers, a product matrix of the matrix D and the matrix E is a diagonal matrix, a sum of the components of each row of the matrix D is 0, and a sum of absolute values of the components of each column of the matrix D is less than or equal to a threshold value.
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公开(公告)号:US12287720B2
公开(公告)日:2025-04-29
申请号:US17879246
申请日:2022-08-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Anqi Wang , Ji Yeon Han
IPC: G06F3/048 , G06F3/04845 , G06F11/34 , G06F21/84
Abstract: In one embodiment, a method may include determining one or more of (1) an amount of use of a display screen of a user's client computing device during a period of time, or (2) a frequency of unlocks of the display screen during the period of time. The method may include displaying, on a lock screen of the client computing device, one or more of: (1) the amount of use of the display screen during the period of time, or (2) the frequency of unlocks of the display screen during the period of time.
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公开(公告)号:US12287147B2
公开(公告)日:2025-04-29
申请号:US17493346
申请日:2021-10-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangjine Park , Youngtae Kim , Jihoon Jeong , Younghoo Kim
Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.
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公开(公告)号:US12286446B2
公开(公告)日:2025-04-29
申请号:US16559056
申请日:2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jongwon Choi , Yongsuk Cho , Yoonhyun Kwak , Hyun Koo , Ohyun Kwon , Soyeon Kim , Sukekazu Aratani , Jiyoun Lee , Kyuhyun Im , Dmitry Kravchuk
IPC: C07F15/00 , H10K50/11 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/81 , H10K50/82 , H10K85/30 , H10K85/60
Abstract: An organometallic compound represented by Formula 1, an organic light-emitting device including the same, and a diagnostic composition including the organometallic compound: wherein, Formula 1, R1 to R12 and R21 to R23 are each independently the same as described in the detailed description of the specification.
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公开(公告)号:US20250133970A1
公开(公告)日:2025-04-24
申请号:US18444206
申请日:2024-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minwoo CHOI , Hajun SUNG , Bonwon KOO , Kiyeon YANG , Changseung LEE
Abstract: Provided are a chalcogenide-based memory device capable of implementing multi-level memory and an electronic apparatus including the chalcogenide-based memory device. The memory device includes a first electrode and a second electrode arranged to be spaced apart from each other, and a memory layer provided between the first electrode and the second electrode and including a plurality of memory material layers having different threshold voltages from each other. Each of the plurality of memory material layers includes a chalcogenide-based material, has an ovonic threshold switching (OTS) characteristic, and is configured to have a threshold voltage varying depending on a polarity and intensity of an applied voltage.
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公开(公告)号:US20250133842A1
公开(公告)日:2025-04-24
申请号:US18754976
申请日:2024-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung Wook LIM , Sung Hyuck CHO
IPC: H01L27/146
Abstract: An image sensor includes a pixel array including a plurality of unit pixels and a driving circuitry provided around the pixel array and driving the plurality of unit pixels. Each of the plurality of unit pixels includes a first region ad a second region. The first region includes a first photodiode, a first transfer transistor connected to the first photodiode, a first floating diffusion node connected to the first transfer transistor, and a (1-1)-th contact connected to a second floating diffusion node, and the second region includes a second photodiode, a second transfer transistor connected to the second photodiode, a (1-2)-th contact electrically connected to the (1-1)-th contact through connection metal wiring, and a second contact provided to a third floating diffusion node connected to the second transfer transistor.
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公开(公告)号:US20250133841A1
公开(公告)日:2025-04-24
申请号:US18738595
申请日:2024-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: MASATO FUJITA , Seungki Jung
IPC: H01L27/146
Abstract: An image sensor is provided. The image sensor includes: a substrate that includes a plurality of pixels, each of which includes a left sub-pixel and a right sub-pixel; a well region in the substrate on each of the plurality of pixels, the well region connecting the left sub-pixel and the right sub-pixel to each other; a pixel separation part that separates the plurality of pixels from each other and extends in the substrate between the left sub-pixel and the right sub-pixel; a left transfer transistor and a first logic transistor on the left sub-pixel; a right transfer transistor and a second logic transistor on the right sub-pixel; and a ground region in the substrate on one of the left sub-pixel and the right sub-pixel, and in contact with the well region. The ground region is adjacent to a corner of each of the plurality of pixels.
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公开(公告)号:US20250133787A1
公开(公告)日:2025-04-24
申请号:US19005034
申请日:2024-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ju Hun PARK , Won Cheol JEONG , Jin Wook KIM , Deok Han BAE , Myung Yoon UM , In Yeal LEE , Yoon Young JUNG
Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.
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公开(公告)号:US20250133738A1
公开(公告)日:2025-04-24
申请号:US18661467
申请日:2024-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chulmin Choi , Changhee Lee , Dajin Kim , Jiwoong Kim , Tae Hun Kim , Sang-Yong Park , Seung Jae Baik , Gun-Wook Yoon , Jaeduk Lee
IPC: H10B43/27 , H01L25/065 , H10B41/10 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/10 , H10B43/35 , H10B43/40 , H10B80/00
Abstract: A semiconductor device includes a gate stack with alternating conductive patterns and insulating patterns. The device also includes a first memory channel structure including a first channel layer enclosed by the gate stack and a first memory layer enclosing the first channel layer. The device also includes a source structure electrically connected to the first channel layer. The source structure includes several source layers stacked atop one another. The first channel layer is in physical contact with the second source layer but apart from the other source layers. The first source layer contains impurities of a first conductivity type. The second source layer is formed of an impurity-free material. The third source layer contains impurities of a second conductivity type different from the first conductivity type.
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