摘要:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要:
A pressure sensor portion having a pressure-responsive element for detecting gas pressure in reference to the atmospheric pressure is connected to a mounting body such as a canister mounted on a vehicle by means of a fragile connecting member. The connecting member breaks off to dismount the sensor device from the mounting body when a high impact due to an accidental collision or crash is imposed on the sensor device, and thereby an inlet port connected to the sensor portion for introducing gas pressure thereinto is prevented from being broken or damaged by such a collision impact. The fragile connecting member may include a tubular pipe formed integrally with a cover that hermetically closes an inner cavity of the sensor portion. A mounting bracket connected to the sensor portion via the fragile connecting member may be used to mount the sensor device on the mounting body.
摘要:
A knock sensor for which a fabrication process is simple and moreover which can detect up to a high-frequency region is provided. A sensing element 11 composed of a semiconductor the weight (mass) thereof being 1 g or less and a signal processing circuit 11 are mounted on a fixing pedestal 9. The fixing pedestal 9 is fixed to a connector 2 side by means of adhesive or the like. Additionally, the connector 2 is fixed by means of caulking 16 of a housing 1. As a result thereof, the sensing element 11 is disposed within a space formed by the fixing pedestal 9 and the housing 1.
摘要:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要:
A pressure sensor for detecting a pressure such as a brake oil pressure in an automobile is composed of a cylindrical stem, a sensor chip and a circuit board for processing an electrical signal from the sensor chip. The cylindrical stem includes a thin diaphragm formed at an axial end and an opening formed at the other axial end. The sensor chip is mounted on the diaphragm, and the circuit board is mounted on a flat side surface formed on the outer periphery of the cylindrical stem so that the circuit board is positioned perpendicularly to the sensor chip, thereby reducing a size of the pressure sensor in the radial direction of the stem. The pressure to be detected is introduced into the cylindrical stem from its opening, and the pressure is detected by the sensor chip mounted on the diaphragm.
摘要:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要:
A case of a pressure sensor has an atmospheric pressure introduction port for introducing atmospheric pressure into the case, and a water repellent filter that is attached to the atmospheric pressure introduction port to prevent passage of moisture, dust and the like while allowing flow of air. The filter is disposed to have a filter surface extending along a gravitational direction when the pressure sensor is used.
摘要:
A pressure detecting apparatus includes a sensing body with a diaphragm to which pressure is applied and a strain gauge plate having a {100} silicon substrate and a glass base, which is bonded on the sensing body. A thin portion and through holes are formed in the silicon substrate so that the thin portion has a beam structure on which strain gauges are formed. When the pressure is applied, the resistances of the strain gauges change in a positive direction, while the resistances of the strain gauges change in a negative direction. Accordingly, the linearity of the output from the pressure detecting apparatus can be improved.