摘要:
A light emitting device according to an embodiment includes: a body including a cavity formed with a stepped section; an electrode of which one end is disposed on the stepped section and the other end is disposed outside of the body; a heat sink including a main frame and a sub frame, wherein the sub frame includes a slope and a portion of the heat sink is disposed outside of the body; and a light emitting diode disposed on the heat sink.
摘要:
A light emitting device package is provided. The light emitting device package may include a package body having a cavity formed therein, a lead frame, and a light emitting device positioned in the cavity and electrically connected to the lead frame. The lead frame may penetrate the package body such that one end of the lead frame is positioned in the cavity and the other end of the lead frame is exposed to an outside of the package body. The lead frame may be partially coated with a thin metal layer.
摘要:
The present invention features a steel-base sintering alloy having a high wear-resistance for a valve seat of an engine. In preferred embodiments, the steel-base sintering alloy may include a chief element of Ferrum (Fe); and a powder-alloy which are composed of Carbon (C) of 0.6˜1.2 wt %, Nickel (Ni) of 1.0˜3.0 wt %, Cobalt (Co) of 15.0˜25.0 wt %, Chrome (Cr) of 3.0˜9.0 wt %, Molybdenum (Mo) of 8.0˜15.0 wt %, Tungsten (W) of 1.0˜4.0 wt %, Manganese (Mn) of 0.5˜2.0 wt %, and Calcium (Ca) of 0.1˜0.5 wt %.
摘要:
A voltage generating circuit includes a first storage unit, a second storage unit, and a voltage generator. The first storage unit stores first voltage data, and the second storage unit stores second voltage data. The voltage generator generates a voltage corresponding to one of the first and the second voltage data according to whether the second voltage data is changed from the first voltage data.
摘要:
A spiral staircase shaped stacked semiconductor package is presented. The package includes a semiconductor chip module, a substrate and connection members. The semiconductor chip module includes at least two semiconductor chips which have chip selection pads and through-electrodes. The semiconductor chips are stacked such that the chip selection pads are exposed and the through-electrodes of the stacked semiconductor chips are electrically connected to one another. The substrate has the semiconductor chip module mounted thereto and has connection pads. The connection members electrically connect the chip selection pads to respective connection pads.
摘要:
A semiconductor package includes a substrate, a first semiconductor chip module attached to the substrate, a conductive connection member attached to the first semiconductor chip module, and a second semiconductor chip module attached to the conductive connection member. The first and second semiconductor chip modules are formed to have step like shapes to and extend laterally in opposite directions so as to define a zigzag arrangement together.
摘要:
A light emitting apparatus according to an embodiment includes: a body including a cavity; an electrode of which one end is disposed in the cavity by penetrating the body and the other end is disposed outside of the body; a heat radiating member including a main frame which is coupled with the body to form the bottom of the cavity and a sub frame which extends from the main frame, wherein the top surface of the main frame has a larger area than the bottom surface of the main frame and the sub frame includes a slope; and a light emitting device installed on the heat radiating member and electrically connected with the electrode.
摘要:
The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other,wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.
摘要:
A two-way key of a portable terminal is provided. The two-way terminal includes a fixed member mounted on the portable terminal, a driving member rotatably assembled with the fixed member, and an operating member pivotably assembled with the fixed member, wherein, as the driving member rotates, the driving member comes into contact with the operating member and causes the operating member to pivot. The two-way key as configured above can construct a key capable of operating in two ways while taking a small space so that it contributes to the compact size of the terminal. Further, if the two-way key is employed in the watch-type portable terminal, the operating scheme is identical to that of a spring of a common analog wrist watch or a time control lever, so that it is familiar to a user and thus it is convenient for a user to use.
摘要:
The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.