公开(公告)号：US20070232042A1

公开(公告)日：2007-10-04

申请号：US11617595

申请日：2006-12-28

申请人： Jun-Hee Cho

发明人： Jun-Hee Cho

IPC分类号： H01L21/465

CPC分类号： H01L21/3083 ,  H01L29/4236

摘要： A method for fabricating a semiconductor device includes etching a portion of a substrate to form a recess. A polymer layer fills a lower portion of the recess. Sidewall spacers are formed over the recess above the lower portion of the recess. The polymer layer is removed. The lower portion of the recess is isotropically etching to form a bulb-shaped recess.

摘要翻译： 一种用于制造半导体器件的方法，包括蚀刻衬底的一部分以形成凹陷。 聚合物层填充凹部的下部。 侧壁间隔件形成在凹部的下部上方的凹部上。 去除聚合物层。 凹槽的下部进行各向同性蚀刻以形成灯泡状的凹部。

公开(公告)号：US20060292819A1

公开(公告)日：2006-12-28

申请号：US11321925

申请日：2005-12-28

申请人： Jun-Hee Cho

发明人： Jun-Hee Cho

IPC分类号： H01L21/76 ,  H01L29/00

CPC分类号： H01L21/76289 ,  H01L21/76283 ,  H01L21/764 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203

摘要： A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second insulation layers for device isolation are formed on sidewalls of the first insulation layers.

摘要翻译： 半导体结构在衬底上具有有源区，并且在半导体结构的侧部的下边缘处形成凹部。 用于器件隔离的图案化的第一绝缘层被埋入凹部中。 用于器件隔离的第二绝缘层形成在第一绝缘层的侧壁上。

公开(公告)号：US06862419B2

公开(公告)日：2005-03-01

申请号：US10245564

申请日：2002-09-18

申请人： Jun-hee Cho ,  Yong-su Kim

发明人： Jun-hee Cho ,  Yong-su Kim

IPC分类号： G03G15/00 ,  G03G15/10 ,  G03G15/11

CPC分类号： G03G15/104 ,  G03G15/101

摘要： A liquid image developing system, including a cartridge in which a developer is stored; a supply line; a development container to which the developer is supplied from the cartridge through the supply line; a photosensitive body in the development container; a development roller partially soaked in the developer in the development container and rotating opposite to the photosensitive body; a depositing member to create a potential difference required to attach the developer to a circumference of the development roller, opposite to the development roller; a metering blade to scratch the developer attached to the circumference of the development roller to a predetermined thickness; and an agitator to agitate the developer contained in the development container. Accordingly, a high-concentration developer can be directly used in the development operation without a dilution operation, and thus the structure to supply the developer can be considerably simplified.

摘要翻译： 一种液体图像显影系统，包括储存显影剂的墨盒; 供应线 开发容器，显影剂从盒通过供应线供应到显影容器; 显影容器中的感光体; 显影辊，其部分地浸泡在显影容器中的显影剂中并与感光体相反地旋转; 沉积构件以产生将显影剂附接到与显影辊相对的显影辊的圆周所需的电位差; 计量刀片，用于将连接到显影辊的圆周上的显影剂刮擦到预定厚度; 以及用于搅拌包含在显影容器中的显影剂的搅拌器。 因此，高浓度显影剂可以直接用于显影操作而不进行稀释操作，从而可以大大简化供应显影剂的结构。

公开(公告)号：US08797434B2

公开(公告)日：2014-08-05

申请号：US13138630

申请日：2010-03-10

申请人： Jawoong Lee ,  Jun hee Cho ,  Jong Beom Choi

发明人： Jawoong Lee ,  Jun hee Cho ,  Jong Beom Choi

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/355

CPC分类号： H01L27/14609 ,  H04N5/35554 ,  H04N5/37452

摘要： Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.

摘要翻译： 公开了具有宽动态范围的CMOS图像传感器及其感测方法。 本发明的CMOS图像传感器的每个单位像素包括多个处理单元，使得一个图像帧的图像生成的一个快门部分可以被划分为多个部分，以分别由每个处理单元快门和采样分割的部分。 因此，本发明的图像传感器能够分别在多个处理单元中执行多个快门动作，并且多个处理单元分别对由快门动作引起的每个浮动扩散电压进行采样，从而实现宽的动态范围。

公开(公告)号：US08236696B2

公开(公告)日：2012-08-07

申请号：US11965708

申请日：2007-12-27

申请人： Jun-Hee Cho

发明人： Jun-Hee Cho

IPC分类号： H01L29/78 ,  H01L21/306

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7853

摘要： A method for fabricating a semiconductor device to enlarge a channel region is provided. The channel region is enlarged due to having pillar shaped sidewalls of a transistor. The transistor includes a fin active region vertically protruding on a substrate, an isolation layer enclosing a lower portion of the fin active region, and a gate electrode crossing the fin active region and covering a portion of the fin active region. An isolation layer is formed enclosing a lower portion of the fin active region and the isolation layer under the spacers is partially removed to expose a portion of the sidewalls of the fin active region. Subsequently, dry etching is performed to form the sidewalls having a pillar/neck.

摘要翻译： 提供了一种制造半导体器件以扩大沟道区域的方法。 由于具有晶体管的柱状侧壁，沟道区域被扩大。 晶体管包括在衬底上垂直突出的翅片有源区域，包围翅片有源区域的下部的隔离层以及与鳍片有源区域交叉并覆盖翅片有源区域的一部分的栅电极。 隔离层被形成为包围翅片有源区的下部，并且隔离层下面的隔离层被部分去除以暴露翅片活性区的侧壁的一部分。 随后，进行干蚀刻以形成具有柱/颈的侧壁。

公开(公告)号：US20100105183A1

公开(公告)日：2010-04-29

申请号：US12648231

申请日：2009-12-28

申请人： Jun-Hee CHO

发明人： Jun-Hee CHO

IPC分类号： H01L21/336

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78639 ,  H01L29/78696

摘要： A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.

摘要翻译： 半导体器件包括限定至少四个表面的有源区，所述四个表面包括第一，第二，第三和第四表面，围绕有源区的四个表面形成的栅极绝缘层，以及围绕栅极绝缘体形成的栅电极 层和有源区的四个表面。

公开(公告)号：US07638398B2

公开(公告)日：2009-12-29

申请号：US11617500

申请日：2006-12-28

申请人： Jun-Hee Cho

发明人： Jun-Hee Cho

IPC分类号： H01L29/786 ,  H01L29/80

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78639 ,  H01L29/78696

摘要： A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.

摘要翻译： 半导体器件包括限定至少四个表面的有源区，所述四个表面包括第一，第二，第三和第四表面，围绕有源区的四个表面形成的栅极绝缘层，以及围绕栅极绝缘体形成的栅电极 层和有源区的四个表面。

公开(公告)号：US20070148980A1

公开(公告)日：2007-06-28

申请号：US11413189

申请日：2006-04-28

申请人： Jun-Hee Cho

发明人： Jun-Hee Cho

IPC分类号： C23F1/00 ,  H01L21/311 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L29/42376 ,  H01L21/28114 ,  H01L29/66545

摘要： A method for fabricating a semiconductor device with a bulb-shaped recess gate pattern is provided. The method includes forming a plurality of oxide layers over a substrate; forming a silicon layer to cover the oxide layers; forming a mask over the silicon layer; etching the silicon layer using the mask as an etch mask to form a plurality of first recesses to expose the oxide layers; etching the oxide layers to form a plurality of second recesses; and forming a plurality of gate patterns at least partially buried into the first recesses and the second recesses.

摘要翻译： 提供一种用于制造具有灯泡形凹槽栅极图案的半导体器件的方法。 该方法包括在衬底上形成多个氧化物层; 形成硅层以覆盖氧化物层; 在硅层上形成掩模; 使用掩模蚀刻硅层作为蚀刻掩模以形成多个第一凹部以暴露氧化物层; 蚀刻氧化物层以形成多个第二凹槽; 以及形成至少部分地埋入所述第一凹部和所述第二凹部中的多个栅极图案。

公开(公告)号：US06920305B2

公开(公告)日：2005-07-19

申请号：US10231056

申请日：2002-08-30

申请人： Seung-young Byun ,  Jun-hee Cho

发明人： Seung-young Byun ,  Jun-hee Cho

IPC分类号： G03G21/00

CPC分类号： G03G21/0047 ,  G03G2221/0005

摘要： A device for and a method of cleaning a photoreceptor medium of an electrophotographic image forming apparatus include a magnet which is installed in a lengthwise direction of the photoreceptor medium and is separated from an outer surface of the photoreceptor medium, and a magnetic fluid which fills a space between the magnet and the outer surface of the photoreceptor medium and closely contacts the outer surface of the photoreceptor medium. Accordingly, abrasion of the photoreceptor medium can be prevented, and since the developer does not stick to the magnetic fluid, a decrease in a cleaning efficiency can be prevented.

摘要翻译： 用于清洁电子照相图像形成装置的感光体介质的装置和方法包括：安装在感光体介质的长度方向上并与感光体介质的外表面分离的磁体;以及磁性流体， 磁体与感光体介质的外表面之间的空间，并与感光体介质的外表面紧密接触。 因此，可以防止感光体介质的磨损，并且由于显影剂不粘附到磁性流体，因此可以防止清洁效率的降低。

公开(公告)号：US06766130B2

公开(公告)日：2004-07-20

申请号：US10142949

申请日：2002-05-13

申请人： In-yong Song ,  Kyu-cheol Shin ,  Kwang-ho No ,  Hyun-seong Shin ,  Geun-yong Park ,  Jong-woo Kim ,  Seung-young Byun ,  Joong-gwang Shin ,  Sam-seuk Choi ,  Yong-su Kim ,  Woo-yong Park ,  Jun-hee Cho ,  Wan-ha Kim

发明人： In-yong Song ,  Kyu-cheol Shin ,  Kwang-ho No ,  Hyun-seong Shin ,  Geun-yong Park ,  Jong-woo Kim ,  Seung-young Byun ,  Joong-gwang Shin ,  Sam-seuk Choi ,  Yong-su Kim ,  Woo-yong Park ,  Jun-hee Cho ,  Wan-ha Kim

IPC分类号： G03G1510

CPC分类号： G03G15/101 ,  G03G2215/0119

摘要： A liquid developer imaging system and a method using the system for developing an image, including a cartridge for containing a developing solution; a developing container for receiving the developing solution supplied from the cartridge via a predetermined supply line; a developing roller partly submerged in the developing solution contained in the developing container, installed to be rotated facing a photosensitive object; and a metering blade for scraping off the developing solution coated on the surface of the developing roller to a predetermined thickness, is provided. According to the system, a developing supply structure can be considerably simplified because a high-density developing solution is directly used in developing an image without a process of diluting the solution, and an image can be developed to have high definition because the concentration of the developing solution coated on the developing roller is regularly controlled by a metering blade.

摘要翻译： 液体显影剂成像系统和使用该图像显影系统的方法，包括用于容纳显影液的盒; 显影容器，用于经由预定的供应线接收从盒提供的显影液; 显影辊部分地浸没在容纳在显影容器中的显影液中，安装成面向感光体​​旋转; 并且提供了用于将涂覆在显影辊表面上的显影液刮除到预定厚度的计量刮刀。 根据该系统，由于高密度显影液直接用于显影图像而没有稀释溶液的过程，所以可以显着地简化开发的供应结构，并且可以开发出具有高清晰度的图像，因为其浓度 涂布在显影辊上的显影液由计量刮刀定期控制。