公开(公告)号：US20060270217A1

公开(公告)日：2006-11-30

申请号：US11398436

申请日：2006-04-05

Applicant: Mihaela Balseanu ,  Jia Lee ,  Mei-Yee Shek ,  Amir Al-Bayati ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Jia Lee ,  Mei-Yee Shek ,  Amir Al-Bayati ,  Li-Qun Xia ,  Hichem M'Saad

IPC: H01L21/44

CPC classification number: H01L29/7843 ,  C23C16/345 ,  C23C16/56 ,  H01L21/28044 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4925 ,  H01L29/66545 ,  H01L29/66583

Abstract: A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.

公开(公告)号：US07115508B2

公开(公告)日：2006-10-03

申请号：US10816606

申请日：2004-04-02

Applicant: Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC: H01L21/44 ,  H01L21/31

CPC classification number: H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract translation: 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US07018941B2

公开(公告)日：2006-03-28

申请号：US10830203

申请日：2004-04-21

Applicant: Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

Inventor： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/461

CPC classification number: H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

Abstract translation: 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：US20050184257A1

公开(公告)日：2005-08-25

申请号：US10784315

申请日：2004-02-20

Applicant: Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

Inventor： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

IPC: H01J37/304

CPC classification number: H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

Abstract translation: 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：US20050089293A1

公开(公告)日：2005-04-28

申请号：US10997715

申请日：2004-11-24

Applicant: Hichem M'Saad

Inventor： Hichem M'Saad

IPC: C23C16/40 ,  G02B6/12 ,  G02B6/132 ,  G02B6/10

CPC classification number: C23C16/401 ,  G02B6/132 ,  G02B2006/12097

Abstract: An optical waveguide is formed on a substrate by first depositing an undercladding layer over the substrate. At least one core is formed over the undercladding layer. An uppercladding layer is then formed over the cores with a high-density plasma process. Deposition of the uppercladding layer may proceed by flowing an oxygen-containing gas, such as O2, a silicon-containing gas, such as SiH4, and a fluorine-containing gas, such as SiF4, into a process chamber to produce a gaseous mixture. A high-density plasma, i.e. having a density of at least 1011 ions/cm3, is generated from the gaseous mixture and then used to deposit a fluorinated silicate glass layer.

Abstract translation: 通过首先在衬底上沉积下封层，在衬底上形成光波导。 在下封层上形成至少一个芯。 然后用高密度等离子体工艺在芯上形成上层。 上层的沉积可以通过使诸如SO 2的含氧气体，例如SiH 4 O 3等含氧气体和含氟气体 气体，例如SiF 4 N，进入处理室以产生气态混合物。 从气体混合物产生高密度等离子体，即具有至少10 11 / cm 3的密度，然后用于沉积氟化硅酸盐玻璃层 。

公开(公告)号：US06399489B1

公开(公告)日：2002-06-04

申请号：US09431411

申请日：1999-11-01

Applicant: Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

Inventor： Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

IPC: C23C16/50 ,  C23C16/32 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC classification number: C23C16/325 ,  H01L21/314 ,  H01L21/3146 ,  Y10S438/931

Abstract: A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.

Abstract translation: 使用包含含烃气体和含硅气体的气体混合物在衬底上沉积诸如阻挡层的膜的方法。 合适的含烃气体包括烷烃如甲烷（CH4），乙烷（C2H6），丁烷（C3H8），丙烷（C​​4H10）等。合适的含硅气体包括硅烷如硅烷（SiH 4）。 该方法通常包括向腔室提供合适的气体混合物，从气体混合物产生等离子体，以及使用等离子体将膜沉积到衬底上。 在优选的实施方案中，膜以高密度等离子体化学气相沉积（HDP-CVD）系统沉积。 气态混合物通常包括含硅气体，例如烷烃，和含烃气体，例如硅烷。 本发明方法的实施方案可以具有总体介电常数为约4.0或更小的堆叠结构。 这种结构可以包括介电常数为4.5或更小的阻挡层。

公开(公告)号：US20130213574A1

公开(公告)日：2013-08-22

申请号：US13676820

申请日：2012-11-14

Applicant: Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

Inventor： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: B08B7/00

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US20120196452A1

公开(公告)日：2012-08-02

申请号：US13365229

申请日：2012-02-02

Applicant: Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC: H01L21/318

CPC classification number: C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Abstract translation: 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US08084105B2

公开(公告)日：2011-12-27

申请号：US11765257

申请日：2007-06-19

Applicant: Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

IPC: H05H1/24

CPC classification number: C23C16/342 ,  C23C16/45523

Abstract: Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

Abstract translation: 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

Applicant: Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: C23C26/00 ,  H05H1/24

CPC classification number: H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Abstract translation: 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。