公开(公告)号：US07615163B2

公开(公告)日：2009-11-10

申请号：US11312760

申请日：2005-12-21

申请人： Akitake Tamura ,  Shigeru Nakajima ,  Tetsushi Ozaki

发明人： Akitake Tamura ,  Shigeru Nakajima ,  Tetsushi Ozaki

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  C23C16/401 ,  H01L21/31641 ,  H01L21/31645 ,  Y10S438/905

摘要： A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

摘要翻译： 使用半导体工艺的成膜装置的方法包括通过清洁气体处理沉积在成膜装置的反应室的内表面上的副产物膜。 该步骤被布置成将清洁气体供应到反应室中，并将反应室的内部设定在第一温度和第一压力。 副产物膜主要含有高介电常数材料。 清洁气体含有不含氟的氯。 第一温度和第一压力被设定为激活清洁气体中的氯。

公开(公告)号：US20090183476A1

公开(公告)日：2009-07-23

申请号：US12296305

申请日：2007-04-02

申请人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Akitake Tamura

发明人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Akitake Tamura

IPC分类号： B01D50/00

CPC分类号： B01D46/521 ,  B01D46/0023

摘要： A gas purifying apparatus for removing particles from a gas. The gas purifying apparatus includes a first filter layer and a second filter layer, and the diameter of a fiber forming the first filter layer is larger than that of a fiber forming the second filter layer. A semiconductor manufacturing apparatus can use such a gas purifying apparatus.

摘要翻译： 一种用于从气体中除去颗粒的气体净化装置。 气体净化装置包括第一过滤层和第二过滤层，形成第一过滤层的纤维的直径大于形成第二过滤层的纤维的直径。 半导体制造装置可以使用这种气体净化装置。

公开(公告)号：US20090176374A1

公开(公告)日：2009-07-09

申请号：US12343968

申请日：2008-12-24

申请人： Akitake TAMURA ,  Teruyuki Hayashi ,  Kaoru Fujihara

发明人： Akitake TAMURA ,  Teruyuki Hayashi ,  Kaoru Fujihara

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521

摘要： A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

摘要翻译： 图案形成方法包括：（a）在第一掩模图案的掩模部分的侧壁上形成一对沉积物，在其上形成薄膜，蚀刻它以留下沉积物，并在沉积物之间暴露第二层膜的顶表面; （b）通过去除掩模部分形成对应于沉积物的掩模部分形成的第二掩模图案，等离子体蚀刻第二层膜并除去沉积物; （c）在其上形成薄膜，并对其进行蚀刻以在掩模部分的彼此面对的侧壁上留下沉积物，并在沉积物之间露出第三层膜，同时在相邻的掩模部分之间留下沉积物; 和（d）通过去除第二掩模部分在其上形成凹槽，并蚀刻掉第三层膜。

公开(公告)号：US20050181586A1

公开(公告)日：2005-08-18

申请号：US10965789

申请日：2004-10-18

申请人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： C23C16/42 ,  C23C16/22 ,  C23C16/455 ,  H01L21/205 ,  H01L21/265 ,  H01L21/285

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US20050095826A1

公开(公告)日：2005-05-05

申请号：US10924959

申请日：2004-08-25

申请人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

发明人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

IPC分类号： H01L21/324 ,  C23C16/44 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/24

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/46

摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.

摘要翻译： 目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。 传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。 将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。 在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。 在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。