GAS PURIFYING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS
    3.
    发明申请
    GAS PURIFYING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
    气体净化装置和半导体制造装置

    公开(公告)号:US20090183476A1

    公开(公告)日:2009-07-23

    申请号:US12296305

    申请日:2007-04-02

    IPC分类号: B01D50/00

    CPC分类号: B01D46/521 B01D46/0023

    摘要: A gas purifying apparatus for removing particles from a gas. The gas purifying apparatus includes a first filter layer and a second filter layer, and the diameter of a fiber forming the first filter layer is larger than that of a fiber forming the second filter layer. A semiconductor manufacturing apparatus can use such a gas purifying apparatus.

    摘要翻译: 一种用于从气体中除去颗粒的气体净化装置。 气体净化装置包括第一过滤层和第二过滤层,形成第一过滤层的纤维的直径大于形成第二过滤层的纤维的直径。 半导体制造装置可以使用这种气体净化装置。

    METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM
    4.
    发明申请
    METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM 有权
    用于清洁基板和储存介质的方法和装置

    公开(公告)号:US20110155177A1

    公开(公告)日:2011-06-30

    申请号:US13056504

    申请日:2009-07-27

    IPC分类号: B08B7/00 H01L21/02

    摘要: In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

    摘要翻译: 在清洁方法中,可以通过使用清洁流体清洁具有形成在其表面上的图案的基板,同时在清洁流体被去除或干燥时防止图案突起变平。 清洁方法包括以下步骤:将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。 基板在基板加热步骤中被加热,从而在洗涤液供给步骤中,发生莱顿冰霜现象,清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

    Method and device for cleaning a substrate and storage medium
    5.
    发明授权
    Method and device for cleaning a substrate and storage medium 有权
    清洗基材和储存介质的方法和装置

    公开(公告)号:US08673086B2

    公开(公告)日:2014-03-18

    申请号:US13056504

    申请日:2009-07-27

    IPC分类号: B08B7/00

    摘要: In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

    摘要翻译: 在清洁方法中,可以通过使用清洁流体清洁具有形成在其表面上的图案的基板,同时在清洁流体被去除或干燥时防止图案突起变平。 清洁方法包括以下步骤:将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。 基板在基板加热步骤中被加热,从而在洗涤液供给步骤中,发生莱顿冰霜现象,清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

    Method for analyzing quartz member
    7.
    发明授权
    Method for analyzing quartz member 失效
    石英片分析方法

    公开(公告)号:US08268185B2

    公开(公告)日:2012-09-18

    申请号:US12097767

    申请日:2007-05-28

    IPC分类号: G01N1/32 G01N1/28

    摘要: A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

    摘要翻译: 分析石英构件的方法包括向石英构件供应蚀刻剂以蚀刻石英构件的步骤。 该方法还包括分析在供应步骤中使用的蚀刻剂。 蚀刻剂被供给到在供给步骤之前形成在石英构件中并具有由石英构件形成的内壁的凹蚀刻剂接收部分。

    Analysis method and analysis apparatus
    8.
    发明授权
    Analysis method and analysis apparatus 有权
    分析方法和分析仪器

    公开(公告)号:US07923680B2

    公开(公告)日:2011-04-12

    申请号:US12280845

    申请日:2007-06-21

    IPC分类号: H01J49/00

    摘要: An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.

    摘要翻译: 分析装置包括:第一处理部,用于通过用紫外光照射膜去除在基板上形成的膜;第二处理部,用于在基板的表面上提供溶液,用于将待分析的物体溶解在基板上;以及 用于分析在第二步骤中使用的解决方案中被分析的对象的第三处理部分。

    Plasma processing method and storage medium
    10.
    发明授权
    Plasma processing method and storage medium 有权
    等离子体处理方法和存储介质

    公开(公告)号:US08404590B2

    公开(公告)日:2013-03-26

    申请号:US13189715

    申请日:2011-07-25

    IPC分类号: H01L21/00

    摘要: There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

    摘要翻译: 提供了通过使用包括CF基气体和COS气体的处理气体,通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。 等离子体处理方法包括:根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后,测定残留在目标基板上的硫(S)浓度(残留S浓度) 调整COS气体流量相对于CF系气体流量比(COS / CF比)的比例,使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。