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    METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM
    1.
    发明申请
    METHOD AND DEVICE FOR CLEANING A SUBSTRATE AND STORAGE MEDIUM 有权
    用于清洁基板和储存介质的方法和装置

    公开(公告)号：US20110155177A1

    公开(公告)日：2011-06-30

    申请号：US13056504

    申请日：2009-07-27

    申请人： Akitake Tamura ,  Akinobu Kakimoto ,  Kazuya Dobashi

    发明人： Akitake Tamura ,  Akinobu Kakimoto ,  Kazuya Dobashi

    IPC分类号： B08B7/00 ,  H01L21/02

    CPC分类号： H01L21/02063 ,  H01L21/02057 ,  H01L21/67051

    摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

    摘要翻译： 在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。 清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。 基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

    Method and device for cleaning a substrate and storage medium
    2.
    发明授权
    Method and device for cleaning a substrate and storage medium 有权
    清洗基材和储存介质的方法和装置

    公开(公告)号：US08673086B2

    公开(公告)日：2014-03-18

    申请号：US13056504

    申请日：2009-07-27

    申请人： Akitake Tamura ,  Akinobu Kakimoto ,  Kazuya Dobashi

    发明人： Akitake Tamura ,  Akinobu Kakimoto ,  Kazuya Dobashi

    IPC分类号： B08B7/00

    CPC分类号： H01L21/02063 ,  H01L21/02057 ,  H01L21/67051

    摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

    摘要翻译： 在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。 清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。 基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。

    GAS PURIFYING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS
    5.
    发明申请
    GAS PURIFYING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
    气体净化装置和半导体制造装置

    公开(公告)号：US20090183476A1

    公开(公告)日：2009-07-23

    申请号：US12296305

    申请日：2007-04-02

    申请人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Akitake Tamura

    发明人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Akitake Tamura

    IPC分类号： B01D50/00

    CPC分类号： B01D46/521 ,  B01D46/0023

    摘要： A gas purifying apparatus for removing particles from a gas. The gas purifying apparatus includes a first filter layer and a second filter layer, and the diameter of a fiber forming the first filter layer is larger than that of a fiber forming the second filter layer. A semiconductor manufacturing apparatus can use such a gas purifying apparatus.

    摘要翻译： 一种用于从气体中除去颗粒的气体净化装置。 气体净化装置包括第一过滤层和第二过滤层，形成第一过滤层的纤维的直径大于形成第二过滤层的纤维的直径。 半导体制造装置可以使用这种气体净化装置。

    Plasma processing method and storage medium
    6.
    发明授权
    Plasma processing method and storage medium 有权
    等离子体处理方法和存储介质

    公开(公告)号：US08404590B2

    公开(公告)日：2013-03-26

    申请号：US13189715

    申请日：2011-07-25

    申请人： Sung Tae Lee ,  Kazuya Dobashi

    发明人： Sung Tae Lee ,  Kazuya Dobashi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31116 ,  H01L22/12 ,  H01L22/20

    摘要： There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

    摘要翻译： 提供了通过使用包括CF基气体和COS气体的处理气体，通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。 等离子体处理方法包括：根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后，测定残留在目标基板上的硫（S）浓度（残留S浓度） 调整COS气体流量相对于CF系气体流量比（COS / CF比）的比例，使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。

    Method for generating plasma method for cleaning and method for treating substrate
    7.
    发明申请
    Method for generating plasma method for cleaning and method for treating substrate 审中-公开
    产生等离子体清洗方法的方法和处理基材的方法

    公开(公告)号：US20060226119A1

    公开(公告)日：2006-10-12

    申请号：US10562400

    申请日：2004-06-25

    申请人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

    发明人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

    IPC分类号： B08B6/00 ,  C23F1/00

    CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

    摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

    摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 和含有至少5％的NF 3 N的NF 3气体，并通过以高频功率驱动线圈来点燃等离子体，其中等离子体点火步骤在 总压力为6.65-66.5Pa。

    Substrate cleaning apparatus and substrate cleaning method
    8.
    发明授权
    Substrate cleaning apparatus and substrate cleaning method 有权
    基板清洗装置和基板清洗方法

    公开(公告)号：US09099298B2

    公开(公告)日：2015-08-04

    申请号：US13617530

    申请日：2012-09-14

    申请人： Kazuya Dobashi ,  Takashi Fuse

    发明人： Kazuya Dobashi ,  Takashi Fuse

    IPC分类号： B08B3/02 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311

    CPC分类号： H01L21/02052 ,  H01L21/0206 ,  H01L21/31133 ,  H01L21/67051

    摘要： A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

    摘要翻译： 衬底清洁装置能够从超低温气溶胶喷射中除去基材中更多种污染物，同时避免湿法清洁所固有的技术问题，例如微粗糙度，水印，衬底材料的损失和器件结构的破坏。 用于清洁清洁对象物体所粘附的晶片的基板清洗装置包括：一个簇喷射单元，其用一个或多个聚集在一起的清洁制剂分子形成的一个或多个类型的簇喷射晶片;抽吸单元，其吸取通过喷射分离的清洁对象物体 清洁剂分子的簇; 以及用于相对于彼此沿晶片W的表面移动所述晶片和所述簇喷射单元的单元，所述晶片W的附着在所述表面上。

    PLASMA PROCESSING METHOD AND STORAGE MEDIUM
    9.
    发明申请
    PLASMA PROCESSING METHOD AND STORAGE MEDIUM 有权
    等离子体处理方法和储存介质

    公开(公告)号：US20120021538A1

    公开(公告)日：2012-01-26

    申请号：US13189715

    申请日：2011-07-25

    申请人： Sung Tae Lee ,  Kazuya Dobashi

    发明人： Sung Tae Lee ,  Kazuya Dobashi

    IPC分类号： H01L21/66

    CPC分类号： H01L21/31116 ,  H01L22/12 ,  H01L22/20

    摘要： There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

    摘要翻译： 提供了通过使用包括CF基气体和COS气体的处理气体，通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。 等离子体处理方法包括：根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后，测定残留在目标基板上的硫（S）浓度（残留S浓度） 调整COS气体流量相对于CF系气体流量比（COS / CF比）的比例，使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。