发明申请
- 专利标题： Vertical CVD apparatus for forming silicon-germanium film
- 专利标题（中）： 用于形成硅 - 锗膜的垂直CVD装置
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申请号： US10965789申请日： 2004-10-18
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公开(公告)号： US20050181586A1公开(公告)日： 2005-08-18
- 发明人: Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
- 申请人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
- 优先权： JP2003-359634 20031020
- 主分类号： C23C16/42
- IPC分类号： C23C16/42 ; C23C16/22 ; C23C16/455 ; H01L21/205 ; H01L21/265 ; H01L21/285
摘要：
A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
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