公开(公告)号：US20180261678A1

公开(公告)日：2018-09-13

申请号：US15978546

申请日：2018-05-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/28 ,  H01L21/67 ,  H01L27/088 ,  H01L29/51

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20180061957A1

公开(公告)日：2018-03-01

申请号：US15790739

申请日：2017-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L29/78 ,  H01L27/088 ,  H01L29/51 ,  H01L21/28 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28556 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/78

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20170110324A1

公开(公告)日：2017-04-20

申请号：US15192570

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yen TSAI ,  Hsin-Yi LEE ,  Chung-Chiang WU ,  Da-Yuan LEE ,  Weng CHANG ,  Ming-Hsing TSAI

IPC: H01L21/28 ,  C23C16/455

CPC classification number: H01L21/28105 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5873 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02697 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/76838 ,  H01L21/76886

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.