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    Heater design for MEMS chamber pressure control
    11.
    发明授权
    Heater design for MEMS chamber pressure control 有权

    公开(公告)号：US10131536B2

    公开(公告)日：2018-11-20

    申请号：US15176365

    申请日：2016-06-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Hsin-Yu Chen ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Wei-Ding Wu

    IPC: H01L29/84 ,  B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  H01L49/02

    Abstract: The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.

    Semiconductor FinFET device and method
    16.
    发明授权
    Semiconductor FinFET device and method 有权

    公开(公告)号：US11615965B2

    公开(公告)日：2023-03-28

    申请号：US17012525

    申请日：2020-09-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Yu Wang

    IPC: H01L21/308 ,  H01L21/311 ,  H01L27/092 ,  H01L29/78 ,  H01L21/8238

    Abstract: A method includes depositing a mask layer over a semiconductor substrate, etching the mask layer to form a patterned mask, wherein a sidewall of the patterned mask includes a first sidewall region, a second sidewall region, and a third sidewall region, wherein the first sidewall region is farther from the semiconductor substrate than the second sidewall region and the second sidewall region is farther from the semiconductor substrate than the third sidewall region, wherein the second sidewall region protrudes laterally from the first sidewall region and from the third sidewall region, etching the semiconductor substrate using the patterned mask to form fins, forming a gate stack over the fins, and forming source and drain regions in the fin adjacent the gate stack.

    System and method for monitoring chemical mechanical polishing
    17.
    发明授权
    System and method for monitoring chemical mechanical polishing 有权

    公开(公告)号：US11565365B2

    公开(公告)日：2023-01-31

    申请号：US16175778

    申请日：2018-10-30

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chih-Yu Wang ,  Tien-Wen Wang ,  In-Tsang Lin ,  Hsin-Hui Chou

    IPC: B24B37/005 ,  B24B37/013 ,  H01L21/67 ,  H01L21/306 ,  H01L21/66 ,  B24B49/00 ,  B24B57/02 ,  B24B37/10

    Abstract: An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

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