Patterning apparatus and patterning methods thereof
    11.
    发明授权
    Patterning apparatus and patterning methods thereof 有权
    图案化装置及其图案化方法

    公开(公告)号:US09547236B2

    公开(公告)日:2017-01-17

    申请号:US14568317

    申请日:2014-12-12

    CPC classification number: B05D3/06 B05B7/228 B05D1/02 B41J2/447 G03F7/0002

    Abstract: A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.

    Abstract translation: 提供了图案形成装置。 图案形成装置包括多个液体喷射单元,其以一个或多个组的形式排列并且构造成将抗蚀刻液体喷射到基板的表面上。 图案形成装置还包括多个曝光单元,其配置为在喷射在基板表面上的抗蚀刻液体上曝光,以加热和固化喷射的抗蚀刻液体,以在基板的表面上形成抗蚀刻图案。 此外,图案形成装置包括控制单元,其被配置为控制多个液体喷射单元的运动状态和喷射状态以及多个曝光单元的运动状态和曝光状态,以便在预定行上形成防蚀刻图案 宽度和厚度。

    Overlay measurement method and apparatus

    公开(公告)号:US10679881B2

    公开(公告)日:2020-06-09

    申请号:US15797966

    申请日:2017-10-30

    Abstract: An apparatus for detecting a mark having first and second stripe groups on a substrate includes a detection module moveable over a surface of the substrate. The detection module includes a detection unit and a positioning unit configured to align the detection unit with the mark. The detection unit is configured to obtain data of the mark and operative to perform repeated acquisition operations on the first and second stripe groups of the mark. Each of the acquisition operations acquires data associated with the first stripe group or the second stripe group. The apparatus also includes a processing module configured to determine a positional deviation between the first stripe group and the second stripe group in response to the obtained data of the mark and data associated with a motion of the detection module.

    Calibrating apparatus and method
    14.
    发明授权

    公开(公告)号:US10187964B2

    公开(公告)日:2019-01-22

    申请号:US15967852

    申请日:2018-05-01

    Inventor: Qiang Wu Liwan Yue

    Abstract: Calibrating apparatus and method for correcting aberrations in an extreme ultraviolet (EUV) light source are provided. A calibrating apparatus includes an illuminant positioned at a radiating position, including a plurality of light sources arranged along a straight scanning direction, the plurality of light sources emitting light sequentially; a condenser stage configured to carry a to-be-corrected condenser mirror and drive the to-be-corrected condenser mirror to rotationally scan so that a reflective ellipsoidal surface of the to-be-corrected condenser mirror collects light emitted by the light sources and converge collected light at a center of focus through reflection; and an array detector positioned at the center of focus configured to detect light reflected by the to-be-corrected condenser mirror to obtain a detection spot, the array detector including a standard center point overlapping with the center of focus for comparing a position difference between the detection spot and the standard center point.

    Lithography system and lithography method

    公开(公告)号:US10180631B2

    公开(公告)日:2019-01-15

    申请号:US13924325

    申请日:2013-06-21

    Inventor: Qiang Wu

    Abstract: A lithography system may include a wafer stage. The wafer stage may include a wafer mounting part configured to carry a wafer and configured to oscillate along a plane that is parallel to a top surface of the wafer in a wafer exposure process. The wafer stage may further include a driving device configured to affect an oscillatory movement of the wafer mounting part in the wafer exposure process.

    Patterning method
    17.
    发明授权

    公开(公告)号:US10427185B2

    公开(公告)日:2019-10-01

    申请号:US15372091

    申请日:2016-12-07

    Abstract: A patterning apparatus is provided. The patterning apparatus includes a plurality of liquid jet units arranged in one or more groups and configured to jet an anti-etching liquid onto a surface of a substrate. The patterning apparatus also includes a plurality of exposure units configured to expose light on the anti-etching liquid jetted on the surface of the substrate to heat and cure the jetted anti-etching liquid to form anti-etching patterns on the surface of the substrate. Further, the patterning apparatus includes a control unit configured to control motion status and jetting status of the plurality of liquid jet units and motion status and exposure status of the plurality of exposure units, so as to form the anti-etching patterns at a predetermined line width and thickness.

    Photoresist coating apparatus and methods

    公开(公告)号:US10105722B2

    公开(公告)日:2018-10-23

    申请号:US14287716

    申请日:2014-05-27

    Abstract: A photoresist coating apparatus is provided. The photoresist coating apparatus includes a base; and a position platform moving back and forth along a scanning direction on the base. The photoresist coating apparatus also includes an imprinter having a trench configured to hold photoresist and fixed on the position platform; and a photoresist spray nozzle disposed above the imprinter and configured to spray the photoresist into the trench. Further, the photoresist coating apparatus includes a reticle frame configured to install a cylindrical reticle and enable the cylindrical reticle to rotate around a center axis and contact with the imprinter so as to coat the photoresist in the trench on a surface of the cylindrical reticle.

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