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11.发明授权Magnetoresistive sensor including an amorphous insertion layer excluding glass former elements 有权磁阻传感器包括不含玻璃形成元件的非晶插入层公开(公告)号：US09121886B2
公开(公告)日：2015-09-01
申请号：US14036995
申请日：2013-09-25
Applicant: Seagate Technology LLC
Inventor： Eric W. Singleton , Liwen Tan , Jae-Young Yi , Konstantin Nikolaev
CPC classification number: G11B5/3912 , G01R33/0017 , G01R33/09 , G01R33/098
Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.
Abstract translation: 通过提供一个或多个合金层，每个包含铁磁材料和耐火材料，本文公开的实施方式允许由磁阻（MR）传感器检测的信号得到改善。 合金层邻近屏蔽元件或传感器堆叠的软磁层之间设置。
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公开(公告)号：US20150103438A1
公开(公告)日：2015-04-16
申请号：US14576982
申请日：2014-12-19
Applicant: Seagate Technology LLC
Inventor： Zhengqi Lu , Ann Lynch , Daniel Hassett , Jiansheng Xu , Jae-Young Yi , Liwen Tan , Eric W. Singleton
IPC: G11B5/23
CPC classification number: G11B5/23 , G01R33/093 , G11B5/3912 , G11B5/3929 , H01F10/3204
Abstract: A magnetic element capable of reading data may generally be configured at least with a magnetic seed lamination disposed between a data reader stack and a magnetic shield. The magnetic seed lamination may be constructed at least with one magnetic layer coupled to the bottom shield and at least one non-magnetic layer decoupling the data reader stack from the at least one magnetic layer.
Abstract translation: 能够读取数据的磁性元件通常可以至少配置在数据读取器堆叠和磁性屏蔽之间的磁性种子叠层。 磁性种子层压可以至少构成一个耦合到底部屏蔽的磁性层和至少一个非磁性层使数据读取器堆叠与至少一个磁性层分离。
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公开(公告)号：US11120933B1
公开(公告)日：2021-09-14
申请号：US16369684
申请日：2019-03-29
Applicant: Seagate Technology LLC
Inventor： Liwen Tan , Jae-Young Yi , Eric W. Singleton
Abstract: A magnetoresistive sensor includes a free layer and a cap over the free layer. The cap includes an upper layer and an insertion layer between the upper layer and the free layer. The insertion layer includes a non-magnetic alloy formed of at least one refractory metal and at least one ferromagnetic metal.
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公开(公告)号：US10211034B2
公开(公告)日：2019-02-19
申请号：US15819146
申请日：2017-11-21
Applicant: Seagate Technology LLC
Inventor： Jae-Young Yi , Eric W. Singleton
Abstract: A fabrication method that includes cryogenically cooling a multi-layered structure, which includes a barrier layer, in a multi-purpose chamber having a single enclosure around at least one sputtering target and a substrate support. The method also includes depositing a ferromagnetic layer over the barrier layer of the cryogenically cooled multi-layered structure in the single enclosure when the multi-layered structure is supported on the substrate support.
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公开(公告)号：US09890449B2
公开(公告)日：2018-02-13
申请号：US14699190
申请日：2015-04-29
Applicant: Seagate Technology LLC
Inventor： Qing He , Jae Young Yi , Eric W. Singleton
CPC classification number: C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
Abstract: A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.
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Patent Agency Ranking
公开(公告)号：US09704517B2
公开(公告)日：2017-07-11
申请号：US14962950
申请日：2015-12-08
Applicant: Seagate Technology LLC
Inventor： Eric W. Singleton , Liwen Tan , Jae-Young Yi
CPC classification number: G11B5/3912 , G01R33/007 , G01R33/025 , G01R33/098 , G11B5/3916 , G11B5/398 , G11B2005/3996 , H01F10/3204 , H01F10/3272 , H01L43/08 , H01L43/10 , Y10T428/1121
Abstract: A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.
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公开(公告)号：US09552834B1
公开(公告)日：2017-01-24
申请号：US14867836
申请日：2015-09-28
Applicant: Seagate Technology LLC
Inventor： Victor Boris Sapozhnikov , Steven P. Bozeman , Mohammed Shariat Ullah Patwari , LiWen Tan , Jae Young Yi , Eric W. Singleton
IPC: G11B5/39
CPC classification number: G11B5/3951 , G11B5/3912
Abstract: A multi-sensor reader that includes a first sensor that has a first sensor stack, which includes a sensing layer that has a magnetization that changes according to an external magnetic field. The first sensor also includes a first seed element below the first sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a second sensor stack, which includes a sensing layer that has a magnetization that changes according to the external magnetic field. The second sensor also includes a second seed element below the second sensor stack. The second seed element is structurally different from the first seed element and includes a stabilization feature.
Abstract translation: 一种多传感器读取器，其包括具有第一传感器堆叠的第一传感器，其包括具有根据外部磁场而变化的磁化的感测层。 第一传感器还包括位于第一传感器堆栈下方的第一种子元件。 多传感器读取器还包括堆叠在第一传感器上的第二传感器。 第二传感器包括第二传感器堆，其包括具有根据外部磁场而变化的磁化的感测层。 第二传感器还包括位于第二传感器堆叠下方的第二种子元件。 第二种子元件在结构上不同于第一种子元件并且包括稳定特征。
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18.发明授权Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer 有权具有SAF结构的磁阻传感器具有结晶层和非晶层公开(公告)号：US09230575B2
公开(公告)日：2016-01-05
申请号：US14105922
申请日：2013-12-13
Applicant: Seagate Technology LLC
Inventor： Eric W. Singleton , Liwen Tan , Jae-Young Yi
CPC classification number: G11B5/3912 , G01R33/007 , G01R33/025 , G01R33/098 , G11B5/3916 , G11B5/398 , G11B2005/3996 , H01F10/3204 , H01F10/3272 , H01L43/08 , H01L43/10 , Y10T428/1121
Abstract: Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.
Abstract translation: 本文公开的实施例提供了一种磁阻（MR）传感器，其包括磁耦合到侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。
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公开(公告)号：US20150332714A1
公开(公告)日：2015-11-19
申请号：US14808430
申请日：2015-07-24
Applicant: Seagate Technology LLC
Inventor： Eric W. Singleton , Liwen Tan , Jae-Young Yi , Konstantin Nikolaev
IPC: G11B5/39
CPC classification number: G11B5/3912 , G01R33/0017 , G01R33/09 , G01R33/098
Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each includes a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.
Abstract translation: 通过提供一个或多个合金层，每个包含铁磁材料和耐火材料，本文公开的实施方式允许通过磁阻（MR）传感器检测到的信号得到改进。 合金层邻近屏蔽元件或传感器堆叠的软磁层之间设置。
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公开(公告)号：US20180094346A1
公开(公告)日：2018-04-05
申请号：US15827755
申请日：2017-11-30
Applicant: Seagate Technology LLC
Inventor： Qing He , Jae Young Yi , Eric W. Singleton
CPC classification number: C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
Abstract: A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.
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