公开(公告)号：US20140141599A1

公开(公告)日：2014-05-22

申请号：US14165857

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/02

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。

公开(公告)号：US20160013107A1

公开(公告)日：2016-01-14

申请号：US14640058

申请日：2015-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Jun Won ,  Weon-Hong Kim ,  Moon-Kyun Song

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/324 ,  H01L21/28 ,  H01L21/321

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/321 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.

Abstract translation: 提供了形成半导体器件的方法。 形成半导体器件的方法包括在其中形成包括沟槽的绝缘层。 该方法包括在沟槽中形成高k层。 此外，该方法包括在高k层上形成金属层，然后在第一温度下进行第一热处理，并在高于第一温度的第二温度下进行第二热处理。

公开(公告)号：US20140273392A1

公开(公告)日：2014-09-18

申请号：US14290700

申请日：2014-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-Hong Kim ,  Min-Woo Song ,  Jung-Min Park

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L28/56 ,  H01L28/65

Abstract: A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.

Abstract translation: 一种半导体集成电路器件，包括在下电极上形成的下电极，由金属氮化物层形成的第一电介质层，金属氮氧化物层或其组合，形成在第一介电层上的第二电介质层 其包括氧化锆层和形成在第二介电层上的上电极。

公开(公告)号：US20140035050A1

公开(公告)日：2014-02-06

申请号：US14049570

申请日：2013-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin LIM ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4966

Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

Abstract translation: 制造半导体器件的方法包括在被分成第一区域和第二区域的衬底上形成包括高k电介质材料的栅极绝缘层; 在所述第二区域中的所述栅极绝缘层的第二部分上形成包括第一金属的扩散阻挡层; 在所述栅绝缘层和所述扩散阻挡层上形成扩散层; 以及将所述扩散层的元素扩散到所述第一区域中的所述栅极绝缘层的第一部分中。