公开(公告)号：US20240203989A1

公开(公告)日：2024-06-20

申请号：US18227064

申请日：2023-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinbum KIM ,  Gyeom KIM ,  Youngkwang KIM ,  Chanyoung KIM ,  Jangwoo PARK ,  Sangmoon LEE ,  Sujin JUNG

IPC: H01L27/092 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) (PMOSFET) region and an n-type MOSFET (NMOSFET) region, a first active pattern on the PMOSFET region, a second active pattern on the NMOSFET region, a first channel pattern and a first source/drain pattern on the first active pattern, the first channel pattern connected to the first source/drain pattern, a second channel pattern and a second source/drain pattern provided on the second active pattern, the second channel pattern connected to the second source/drain pattern, and a gate electrode on the first channel pattern and the second channel pattern.

公开(公告)号：US20230411487A1

公开(公告)日：2023-12-21

申请号：US18112122

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjun NAM ,  Sangmoon LEE ,  Jinbum KIM ,  Hyojin KIM

IPC: H01L29/49 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/4908 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode including a plurality of gate electrode portions, a gate electrode portion interposed between adjacent ones of the semiconductor patterns, and a plurality of barrier patterns each comprising an epitaxial layer including single-crystalline silicon oxide. ,A barrier pattern interposed between each of the adjacent ones of the semiconductor patterns and a respective gate electrode portion.

公开(公告)号：US20170013346A1

公开(公告)日：2017-01-12

申请号：US15201788

申请日：2016-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsu LEE ,  Sungsoo MOON ,  Kemsuk SEO ,  Bongjae RHEE ,  Sangmoon LEE ,  Jihun HEO

IPC: H04R1/10 ,  H04W76/02 ,  H04W4/00

CPC classification number: H04R1/1041 ,  H04R1/1025 ,  H04R1/1033 ,  H04R2420/05 ,  H04R2420/07 ,  H04R2420/09 ,  H04R2460/03 ,  H04W4/80

Abstract: An electronic device according to various embodiments of the present disclosure may include a communication module configured to communicate wirelessly with an external device; an ear jack configured to include at least one ear jack terminal; an audio processing unit configured to process an audio signal; and a control unit configured to: detect a coupling with the external device through the ear jack, determine whether the electronic device is in a power transmission mode, control the audio processing unit to generate an ear jack signal when the electronic device is in a power transmission mode, output the ear jack signal by amplifying the ear jack signal so that power is supplied to the coupled external device, and to output the audio signal to the ear jack terminal when the electronic device is not in a power transmission mode.

Abstract translation: 根据本公开的各种实施例的电子设备可以包括被配置为与外部设备进行无线通信的通信模块; 一个耳塞，配置成包括至少一个耳塞端子; 音频处理单元，被配置为处理音频信号; 以及控制单元，被配置为：通过耳塞检测与外部设备的耦合，确定电子设备是否处于电力传输模式，当电子设备处于电源时控制音频处理单元产生耳塞信号 传输模式，通过放大耳机插孔信号来输出耳塞信号，使得电力被提供给耦合的外部设备，并且当电子设备不处于功率传输模式时，将音频信号输出到耳塞端子。

公开(公告)号：US20240321884A1

公开(公告)日：2024-09-26

申请号：US18442590

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhyun SONG ,  Junggil YANG ,  Sangmoon LEE ,  Myunggil KANG ,  Jongsu KIM ,  Beomjin PARK

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: Provided is a semiconductor device including a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region and including a plurality of active patterns extending in a first horizontal direction and a semiconductor material layer, a gate line extending in a second horizontal direction that is perpendicular to the first horizontal direction and covering the channel region on the fin-type active region, and a pair of source/drain regions at both sides of the gate line on the fin-type active region, wherein a work function of the semiconductor material layer is different from a work function of the plurality of active patterns, the semiconductor material layer surrounds portions of the gate line between the plurality of active patterns, and the gate line is separated from the pair of source/drain regions with the semiconductor material layer therebetween.

公开(公告)号：US20220109065A1

公开(公告)日：2022-04-07

申请号：US17550712

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon LEE ,  Kyungin CHOI ,  Seunghun LEE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

公开(公告)号：US20210327449A1

公开(公告)日：2021-10-21

申请号：US17260684

申请日：2019-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Hoon SHIN ,  Jonguk YOO ,  Sangmoon LEE

IPC: G10L21/0216 ,  G10L21/0272 ,  G10L25/18 ,  G10L25/60

Abstract: An electronic device for speech recognition includes a multi-channel microphone array required for remote speech recognition. The electronic device improves efficiency and performance of speech recognition of the electronic device in a space where noise other than speech to be recognized exists. A control method includes receiving a plurality of audio signals output from a plurality of sources through a plurality of microphones and analyzing the audio signals and obtaining information on directions in which the audio signals are input and information on input times of the audio signals. A target source for speech recognition among the plurality of sources is determined on the basis of the obtained information on the directions in which the plurality of audio signals are input, and the obtained information on the input times of the plurality of audio signals, and an audio signal obtained from the determined target source is processed.

公开(公告)号：US20210118880A1

公开(公告)日：2021-04-22

申请号：US16896423

申请日：2020-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin KIM ,  Jihye LEE ,  Sangmoon LEE ,  Seung Hun LEE

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US20200303523A1

公开(公告)日：2020-09-24

申请号：US16889899

申请日：2020-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan SUH ,  Sangmoon LEE ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US20190067285A1

公开(公告)日：2019-02-28

申请号：US15939914

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon LEE ,  Jungtaek KIM ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L27/092 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.