Pellicle for photomask and method of fabricating the same

    公开(公告)号:US10809614B2

    公开(公告)日:2020-10-20

    申请号:US16214781

    申请日:2018-12-10

    Abstract: A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane includes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.

    EXTREME ULTRAVIOLET LITHOGRAPHY APPARATUS

    公开(公告)号:US20210003929A1

    公开(公告)日:2021-01-07

    申请号:US16711593

    申请日:2019-12-12

    Abstract: An EUV lithography apparatus may include a light source, an EUV mask and a carbon-based optical filter. The light source may generate an EUV light. The EUV mask may be configured to apply the EUV light to a photoresist film on a substrate. The carbon-based optical filter may filter a light having an OoB wavelength in the EUV light. Thus, the EUV light may not include the light having the OoB wavelength to decrease an error of a photoresist pattern formed using the EUV light.

    Method for fabricating semiconductor device

    公开(公告)号:US10345698B2

    公开(公告)日:2019-07-09

    申请号:US15606170

    申请日:2017-05-26

    Abstract: A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.

    Mask Including Pellicle, Pellicle Repairing Apparatus, and Substrate Manufacturing Equipment
    20.
    发明申请
    Mask Including Pellicle, Pellicle Repairing Apparatus, and Substrate Manufacturing Equipment 有权
    面膜包括防护薄膜,防护薄膜修复装置和基材制造设备

    公开(公告)号:US20160139501A1

    公开(公告)日:2016-05-19

    申请号:US14755693

    申请日:2015-06-30

    CPC classification number: G03F1/62

    Abstract: Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.

    Abstract translation: 提供一个面具。 掩模可以包括掩模基板,掩模基板上的掩模图案,设置在掩模图案外部的掩模基板的边缘上的框架,以及与掩模图案间隔开的防护薄膜组件,防护薄膜组件设置在框架上,其中防护薄膜组件 包括各自具有纳米厚度的保护层。

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