Abstract:
A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane includes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.
Abstract:
A stud attachment device for attaching a plurality of studs to a photomask constituting a reticle. The stud attachment device including a body; a plurality of holders extending from the body, the holders allowing the studs to be laid thereon, respectively; and a pressure regulator for independently controlling pressures of the holders when the studs are attached to the photomask.
Abstract:
An EUV lithography apparatus may include a light source, an EUV mask and a carbon-based optical filter. The light source may generate an EUV light. The EUV mask may be configured to apply the EUV light to a photoresist film on a substrate. The carbon-based optical filter may filter a light having an OoB wavelength in the EUV light. Thus, the EUV light may not include the light having the OoB wavelength to decrease an error of a photoresist pattern formed using the EUV light.
Abstract:
A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.
Abstract:
A reticle may be fabricated and inspected. The reticle, which may include thin patterns, may be selectively incorporated into a fabricated semiconductor device based on measurement information generated based on the inspecting. The inspecting may include forming thin patterns on a substrate, forming a first discharge layer on the thin patterns, and directing a first charged particle beam to the substrate, such that the first charged particle beam passes through the first discharge layer. Measurement information may be generated based on the first charged particle beam. The first discharge layer may connect the thin patterns to each other and may be separated from the substrate between the thin patterns.
Abstract:
A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.
Abstract:
A method of manufacturing a pellicle assembly, the method including attaching a carbon-containing thin film onto a transfer membrane in a wet atmosphere; attaching the carbon-containing thin film to a pellicle frame in a dry atmosphere while the carbon-containing thin film is attached onto the transfer membrane; and separating the transfer membrane from the carbon-containing thin film while the carbon-containing thin film is attached to the pellicle frame.
Abstract:
Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.
Abstract:
Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.