公开(公告)号：US20240431105A1

公开(公告)日：2024-12-26

申请号：US18748242

申请日：2024-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Sik Lee ,  Yeon Su Kim ,  Hwan Chul Jeon

IPC: H10B43/27

Abstract: A semiconductor memory device and electronic system including the same are provided. The semiconductor memory device may include a first stacked structure including a plurality of first interlayer insulating films, a second stacked structure including a plurality of second interlayer insulating films on the first stacked structure, and a hole that extends into the first stacked structure and the second stacked structure. The plurality of second interlayer insulating films may include a plurality of first films that include first impurities, and a plurality of second films that are free of the first impurities.

公开(公告)号：US10345698B2

公开(公告)日：2019-07-09

申请号：US15606170

申请日：2017-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Beom Yoo ,  Sung Won Kwon ,  Dong Wook Shin ,  Mun Ja Kim ,  Jin Su Kim ,  Hwan Chul Jeon

IPC: G03F1/62 ,  G03F1/80 ,  H01L21/027 ,  G03F1/22 ,  G03F7/20

Abstract: A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.

公开(公告)号：US10065402B2

公开(公告)日：2018-09-04

申请号：US15014054

申请日：2016-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mun Ja Kim ,  Byung-Gook Kim ,  Hwan Chul Jeon ,  Ji-Beom Yoo ,  Dong-Wook Shin ,  Taesung Kim ,  Sooyoung Kim

IPC: B32B37/14 ,  B32B38/18 ,  B32B37/00 ,  G03F1/62 ,  B32B37/10 ,  B32B38/10 ,  B32B37/12 ,  H01L21/00 ,  B32B38/16

Abstract: A method of manufacturing a pellicle assembly, the method including attaching a carbon-containing thin film onto a transfer membrane in a wet atmosphere; attaching the carbon-containing thin film to a pellicle frame in a dry atmosphere while the carbon-containing thin film is attached onto the transfer membrane; and separating the transfer membrane from the carbon-containing thin film while the carbon-containing thin film is attached to the pellicle frame.