Photomask and method of forming the same
    3.
    发明授权
    Photomask and method of forming the same 有权
    光掩模及其形成方法

    公开(公告)号:US09223199B2

    公开(公告)日:2015-12-29

    申请号:US14059533

    申请日:2013-10-22

    CPC classification number: G03F1/76 G03F1/38 G03F1/48 G03F1/54 G03F1/68 G03F1/80

    Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.

    Abstract translation: 光掩模及其形成方法,所述光掩模包括透明基板; 透明基板上的遮光图案,包括钼和硅的遮光图案; 以及覆盖所述遮光图案的至少一侧壁的蚀刻停止层,其中所述蚀刻停止层的蚀刻速率低于所述遮光图案相对于氨基清洗溶液的蚀刻速率。

    Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same

    公开(公告)号:US10274820B2

    公开(公告)日:2019-04-30

    申请号:US15919653

    申请日:2018-03-13

    Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

    Mask Including Pellicle, Pellicle Repairing Apparatus, and Substrate Manufacturing Equipment
    7.
    发明申请
    Mask Including Pellicle, Pellicle Repairing Apparatus, and Substrate Manufacturing Equipment 有权
    面膜包括防护薄膜,防护薄膜修复装置和基材制造设备

    公开(公告)号:US20160139501A1

    公开(公告)日:2016-05-19

    申请号:US14755693

    申请日:2015-06-30

    CPC classification number: G03F1/62

    Abstract: Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.

    Abstract translation: 提供一个面具。 掩模可以包括掩模基板,掩模基板上的掩模图案,设置在掩模图案外部的掩模基板的边缘上的框架,以及与掩模图案间隔开的防护薄膜组件,防护薄膜组件设置在框架上,其中防护薄膜组件 包括各自具有纳米厚度的保护层。

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