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公开(公告)号:US11425668B2
公开(公告)日:2022-08-23
申请号:US16979761
申请日:2019-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yusung Joo , Jaejun Lee , Jaesung Park , Wonshik Yoon
Abstract: According to various embodiments, an electronic device comprises a communication circuit, a processor, and a memory electrically connected to the processor, wherein the memory, when executed, can store commands for allowing the processor to: receive, from a first external electronic device, a first synchronization signal including first identification information through the communication circuit; synchronize the electronic device with the first external electronic device on the basis of at least a part of the information included in the first synchronization signal; receive, from a second external electronic device, a second synchronization signal including second identification information through the communication circuit; and control, on the basis of the second identification information and the first identification information, whether synchronization with second external electronic device occurs. Additional various embodiments are possible.
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公开(公告)号:US11079784B2
公开(公告)日:2021-08-03
申请号:US16801221
申请日:2020-02-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinseong Yun , Kyudong Lee , Jaejun Lee
IPC: G11C5/14 , G05F1/575 , G11C11/4074 , G06F1/28 , G11C11/4076 , G11C11/4093
Abstract: A power management integrated circuit (PMIC) includes a voltage regulator, a monitoring circuit, and a count register. The voltage regulator is configured to generate an output voltage. The monitoring circuit is configured to receive a feedback voltage of the output voltage, and to determine at each of periodic intervals whether the feedback voltage is outside a threshold voltage range. The count register is configured to store a count value indicative of a number of times the feedback voltage is determined by the monitoring circuit to be outside the threshold voltage range.
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13.
公开(公告)号:US20130223123A1
公开(公告)日:2013-08-29
申请号:US13772895
申请日:2013-02-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaejun Lee , Bo-Ra Kim , Jeonghoon Baek
IPC: G11C5/06
CPC classification number: G11C5/06 , G11C7/1045 , G11C7/1057 , G11C7/1084
Abstract: A memory system includes a plurality of memory devices on a printed circuit board, each of the memory devices including a plurality of external pads; a plurality of connection terminals formed on the printed circuit board, and electrically connected to respective ones of the external pads; and a plurality of signal lines formed on the printed circuit board to connect the connection terminals with the external pads, each of the signal lines between a corresponding connection terminal and a corresponding external pad and having a length. The plurality of memory devices are arranged at different distances from the plurality of connection terminals, and each signal line that connects a connection terminal to an external pad of a memory device either is connected to or does not connect a stub resistor depending on a length of the line.
Abstract translation: 存储器系统包括在印刷电路板上的多个存储器件,每个存储器件包括多个外部焊盘; 形成在印刷电路板上的多个连接端子,并且电连接到相应的外部焊盘; 以及形成在印刷电路板上以将连接端子与外部焊盘连接的多条信号线,每条信号线在对应的连接端子和对应的外部焊盘之间并具有一定的长度。 多个存储器件布置在与多个连接端子不同的距离处,并且将连接端子与存储器件的外部焊盘连接的每个信号线都连接到或不连接短截止电阻器,这取决于长度 线。
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公开(公告)号:US20240429192A1
公开(公告)日:2024-12-26
申请号:US18401625
申请日:2023-12-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: CHAJEA JO , Jaejun Lee , Hyiyeong Jang
Abstract: A semiconductor package includes a lower semiconductor chip including a first circuit layer, an upper semiconductor chip disposed on the lower semiconductor chip and including a second circuit layer, and an interconnection layer disposed between the lower semiconductor chip and the upper semiconductor chip, the interconnection layer including a plurality of pads, including at least a first pad offset from the lower semiconductor chip or the upper semiconductor chip, and a wiring portion horizontally extended and connecting the first pad of the plurality of pads to a second pad of the plurality of pads disposed between the lower semiconductor chip and the upper semiconductor chip, wherein the wiring portion of the interconnection layer electrically connects the first circuit layer to the second circuit layer.
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15.
公开(公告)号:US20240239820A1
公开(公告)日:2024-07-18
申请号:US18329976
申请日:2023-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunghyun HAN , Haengdeog Koh , Yoonhyun Kwak , Kyungoh Kim , Mijeong Kim , Jaejun Lee , Hasup Lee , Kyuhyun IM , Sukkoo Hong
CPC classification number: C07F7/2224 , G03F7/0042 , G03F7/0048 , G03F7/2004
Abstract: Provided are an organometallic compound represented by one of Formulas 1-1 to 1-4 below.
a resist composition including the same, and a pattern forming method using the same. For descriptions of M11, L11 to L14, a11 to a14, R11 to R14, X11 to X14, n11 to n15, Y11 to Y13, and R15 to R17 in Formulas 1-1 to 1-4, refer to the specification.-
公开(公告)号:US20230083475A1
公开(公告)日:2023-03-16
申请号:US17720843
申请日:2022-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seonghoon JOO , Jaejun Lee , Ilhan Choi
Abstract: A semiconductor memory device includes a plurality of input-output pins configured to communicate with a memory controller, a command control logic, a temperature measurement circuit and an operation limit controller. The command control logic controls an operation of the semiconductor memory device based on command signals and control signals transferred from the memory controller through control pins among the plurality of input-output pins. The temperature measurement circuit measures an operation temperature of the semiconductor memory device to generate a temperature code corresponding to the operation temperature. The operation limit controller, when it is determined based on the temperature code that the operation temperature exceeds a risk temperature, controls an internal operation of the semiconductor memory device regardless of the command signals and the control signals transferred from the memory controller to thereby decrease a power consumption of the semiconductor memory device.
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公开(公告)号:US11425630B2
公开(公告)日:2022-08-23
申请号:US17147042
申请日:2021-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yusung Joo , Jaejun Lee , Jaesung Park , Wonshik Yoon
Abstract: An electronic device is provided. The electronic device includes a display, a communication circuit, a memory, and a processor. The processor is configured to receive first system information broadcast from a base station using the communication circuit, connect to a cell associated with the base station based on the first system information using the communication circuit, and trigger, based on a frequency band of the cell and radio resource information about the cell, a first event indicating that device-to-device communication is possible or a second event indicating that the device-to-device communication is impossible.
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