公开(公告)号：US10651194B2

公开(公告)日：2020-05-12

申请号：US16142637

申请日：2018-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hoon Choi ,  Sung Gil Kim ,  Seulye Kim ,  Jung Ho Kim ,  Hong Suk Kim ,  Phil Ouk Nam ,  Jae Young Ahn ,  Han Jin Lim

IPC: H01L29/792 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11565

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

公开(公告)号：US10600806B2

公开(公告)日：2020-03-24

申请号：US16459337

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Gil Kim ,  Seul Ye Kim ,  Hong Suk Kim ,  Jin Tae Noh ,  Ji Hoon Choi ,  Jae Young Ahn

IPC: H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L23/00 ,  H01L29/06 ,  H01L25/065 ,  H01L27/11565

Abstract: A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

公开(公告)号：US09816021B2

公开(公告)日：2017-11-14

申请号：US14657443

申请日：2015-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-University Cooperation Foundation Hanyang University (IUCF-HYU)

Inventor： Hong Suk Kim ,  Myong Jong Kwon ,  Seung Jin Oh ,  Yunho Gwak ,  Young-Pil Kim ,  Ji-In Park ,  EonSeon Jin

IPC: C09K3/18 ,  C09D189/00 ,  C07K17/14 ,  C08H1/00 ,  F28F19/00 ,  F28F19/04

CPC classification number: C09K3/18 ,  C07K17/14 ,  C08H1/00 ,  C09D189/00 ,  F28F19/006 ,  F28F19/04 ,  Y10T428/31678 ,  C08L89/00

Abstract: An antifreeze member includes a metal substrate, and a first coating layer including a recombinant antifreeze protein in which a metal-binding protein is conjugated to a performance-enhancing reformed antifreeze protein, and being bonded to the metal substrate via the metal-binding protein.